Browsing by Author Kang, N.

Jump to: 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Showing results 1 to 11 of 11
Issue DateTitleAuthor(s)
20170-pi phase transition in hybrid superconductor-InSb nanowire quantum dot devicesLi, Sen; Kang, N.; Caroff, P.; Xu, H. Q.
2018Charge transport and electron-hole asymmetry in low-mobility graphene/hexagonal boron nitride heterostructuresLi, Jiayu; Lin, Li; Huang, Guang-Yao; Kang, N.; Zhang, Jincan; Peng, Hailin; Liu, Zhongfan; Xu, H. Q.
2016Coherent Charge Transport in Ballistic InSb Nanowire Josephson JunctionsLi, S.; Kang, N.; Fan, D. X.; Wang, L. B.; Huang, Y. Q.; Caroff, P.; Xu, H. Q.
2015Formation of long single quantum dots in high quality InSb nanowires grown by molecular beam epitaxyFan, Dingxun; Li, Sen; Kang, N.; Caroff, Philippe; Wang, L. B.; Huang, Y. Q.; Deng, M. T.; Yu, C. L.; Xu, H. Q.
2016Free-Standing Two-Dimensional Single-Crystalline InSb NanosheetsPan, D.; Fan, D. X.; Kang, N.; Zhi, J. H.; Yu, X. Z.; Xu, H. Q.; Zhao, J. H.
2014Gate tunable nonlinear rectification effects in three-terminal graphene nanojunctionsZhu, R. J.; Huang, Y. Q.; Kang, N.; Xu, H. Q.
2014One-dimensional electronic transport at the organic charge-transfer interfaces under high pressuresKang, N.; Auban-Senzier, P.; Li, C.; Poulard, C.; Pasquier, C. R.
2015Phase-coherent transport and spin relaxation in InAs nanowires grown by molecule beam epitaxyWang, L.B.; Guo, J.K.; Kang, N.; Pan, Dong; Li, Sen; Fan, Dingxun; Zhao, Jianhua; Xu, H.Q.
2013Photoelectrical response of hybrid graphene-PbS quantum dot devicesHuang, Y. Q.; Zhu, R. J.; Kang, N.; Du, J.; Xu, H. Q.
2016Probe of local impurity states by bend resistance measurements in graphene cross junctionsDu, J.; Li, J. Y.; Kang, N.; Lin, Li; Peng, Hailin; Liu, Zhongfan; Xu, H. Q.
2016Schottky barrier and contact resistance of InSb nanowire field-effect transistorsFan, Dingxun; Kang, N.; Ghalamestani, Sepideh Gorji; Dick, Kimberly A.; Xu, H. Q.