共建机构 > 上海微电子研究院 [438]

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(Sorted by Submit Date in Descending order): 1 to 20 of 438
Issue DateTitleAuthor(s)
2010LED driving power unit, has negative booster connected with power tube in series, where power tube closing module is utilized for closing power tube when depressurization on negative booster reaches pre-setting value.JIN N HE Y CHENG Y ZHOU S
2010Interconnected resistors measuring structure, has interconnection wires arranged on metal layers, where length of interconnection wires in secondary measuring structure is equal to that of interconnection wires in main measuring structure.CHENG Y ZHANG Y
2010Through-hole resistance measuring structure, has multiple resistance measuring points are installed on connecting wire, and connecting end located on end of connecting wire, where connecting end is covered by connecting wire.CHENG Y ZHANG Y
2010Interconnection line test structure, has sub test structures positioned on multiple metal layers, where sets of capacitance interconnection lines of sub test structures is connected to capacitance measuring ends, respectively.CHENG Y QIN X
2010V-shaped/L-shaped double-diffused MOSFET structure, has well placed in drift region, where polarity of well is opposite to that of drift region and contour line of particle injection surface of well is in curve, round or elliptic shape.XU F LIU Z FU C CHENG Y XU X
2010Multi-mode frequency controller, has frequency generating module utilized for generating power tube control signal with new work frequency according to signal output by frequency control module.HE Y CHENG Y ZHOU S
2010Higher-order compensation band-gap standard voltage source, has higher-order compensation circuit utilized for inputting current to current input end of grounding resistor when current of output branch is reduced.HE Y SHEN L CHENG Y ZHANG Y
2010Multi-standard voltage generation circuit, has external power supply outputting voltage to power supply structure of generation structure, and negative feedback circuit provided with collecting module.FENG L HOU P CHENG Y JIA M JU M DING Q
2010Receiving terminal power supply management device for use in wireless power supply system, has peak current discharge loop connected to super capacitor for receiving energy from super capacitor and outputting peak power.FENG L LIU Z CHENG Y JIA M HOU P DING Q
2010Inductance structure for radio frequency integrated circuit, has floating structure formed by etching medium layer and silicon substrate in middle of spiral surface of metal spiral shape.CHENG Y JIA M WU W
2010Power device for LED illumination module, has power factor correction module for correcting power of accessed LED illumination modules and adjusting power level output of LED illumination modules.JIN N HE Y CHENG Y ZHOU S
2010Current detecting method for on-chip metal oxide semiconductor field effect tube, involves using metal oxide semiconductor tube detecting structure, carrying out third-class shrinking to collected current, and obtaining detecting current.LIU Z JIN N CHENG Y JIN X
2010Current detecting method, involves obtaining detection current, generating reference current, and judging whether detection current reaches predetermined value according to detection and reference currents.SHEN L CHENG Y ZHANG Y ZOU X
2011Method for testing leakage current of LED, involves connecting LED to test system at constant temperature, and detecting leakage current of LED by applying rectangular short pulse continuously with adjustable amplitude to act on LED.YAN W YUAN C
2011Test structure has interconnected wire structure and active device structure that shares one test terminal.CHENG Y QIN X
2011Leakage current testing system of LED, has controller to set constant temperature in constant temperature device and transmission line pulse (TLP) device to test leakage current of LED in constant temperature device.YAN W YUAN C
2011Transverse double-diffused MOSFET structure for high-voltage device, has metal field board and double-grid structure, where metal field board is applied to structure with specific breakdown voltage.ZHANG L CHENG Y
2011Silicon-on-insulator device structure, has tri-layer structure, field oxide layer and separation oxide layer, where field oxide layer and separation oxide layer made of POLY in dielectric constant and thermal conductivity.ZHANG L CHENG Y
2011Circuit for controlling primary current used for driving LED, has capacitors whose ratio is used to decide correct work time of chip, so as to integrate LED module in the chip.GE T LIU Z YAN K CHENG Y JIN X
2011Parameterization module unit for transistor, has module unit for providing parameters for controlling transistors such that corresponding adjustment is automatically made for transistors to be arranged along longitudinal direction.ZHANG Y CHEN X CHENG Y
(Sorted by Submit Date in Descending order): 1 to 20 of 438