Browsing by Author Chen, Kevin J.

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Issue DateTitleAuthor(s)
2014Normally-Off Hybrid Al2O3/GaN MOSFET on Silicon Substrate Based on Wet-EtchingWang, Maojun; Wang, Ye; Zhang, Chuan; Wen, Cheng P.; Wang, Jinyan; Hao, Yilong; Wu, Wengang; Shen, Bo; Chen, Kevin J.
2015O-3-sourced atomic layer deposition of high quality Al2O3 gate dielectric for normally-off GaN metal-insulator-semiconductor high-electron-mobility transistorsHuang, Sen; Liu, Xinyu; Wei, Ke; Liu, Guoguo; Wang, Xinhua; Sun, Bing; Yang, Xuelin; Shen, Bo; Liu, Cheng; Liu, Shenghou; Hua, Mengyuan; Yang, Shu; Chen, Kevin J.
Jun-2021OFF-State Drain-Voltage-Stress-Induced V-TH Instability in Schottky-Type p-GaN Gate HEMTsChen, Junting; Hua, Mengyuan; Wei, Jin; He, Jiabei; Wang, Chengcai; Zheng, Zheyang; Chen, Kevin J.
Dec-2021on-Resistance Analysis of GaN Reverse-Conducting HEMT With Distributive Built-In SBDWei, Jin; Zhang, Li; Zheng, Zheyang; Song, Wenjie; Yang, Song; Chen, Kevin J.
2014Performance enhancement of normally-off Al2O3/AlN/GaN MOS-Channel-HEMTs with an ALD-grown AlN interfacial layerLiu, Shenghou; Yang, Shu; Tang, Zhikai; Jiang, Qimeng; Liu, Cheng; Wang, Maojun; Chen, Kevin J.
Feb-2021Principles and impacts of dynamic threshold voltage in a p-GaN gate high-electron-mobility transistorWei, Jin; Xu, Han; Xie, Ruiliang; Chen, Kevin J.
2015Reduction of Current Collapse in GaN High-Electron Mobility Transistors Using a Repeated Ozone Oxidation and Wet Surface TreatmentLin, Shuxun; Wang, Maojun; Xie, Bing; Wen, Cheng P.; Yu, Min; Wang, Jinyan; Hao, Yilong; Wu, Wengang; Huang, Sen; Chen, Kevin J.; Shen, Bo
2010Reliability of enhancement-mode AlGaN/GaN HEMTs under ON-state gate overdriveMa, Chenyue; Chen, Hongwei; Zhou, Chunhua; Huang, Sen; Yuan, Li; Roberts, John; Chen, Kevin J.
2010Residual stress characterization of GaN microstructures using bent-beam strain sensorsLv, Jianan; Yang, Zhenchuan; Yan, Guizhen; Cai, Yong; Zhang, Baoshun; Chen, Kevin J.
2007SiN-masked GaN-on-Patterned-Silicon (GPS) technique for fabrication of suspended GaN microstructuresYang, Zhenchuan; Zhang, Baoshun; Lau, Kei May; Chen, Kevin J.
Oct-2023Static and Dynamic Characteristics of a 1200-V22-m Normally-Off SiCGaN Cascode Device Built With Parallel-Connected SiC JFETs Controlled by a Single GaN HEMTLyu, Gang; Sun, Jiahui; Wei, Jin; Chen, Kevin J.
2009Study of diffusion and thermal stability of fluorine ions in GaN by Time-of-Flight Secondary Ion Mass SpectroscopyWang, Maojun; Yuan, Li; Xu, Fujun; Shen, Bo; Chen, Kevin J.
2022Substrate and Trench Design for GaN-on-EBUS Power IC Platform Considering Output Capacitance and Isolation between High-side and Low-side TransistorsLyu, Gang; Wei, Jin; Ng, Yat Hon; Cheng, Yan; Feng, Sirui; Chen, Kevin J.
Oct-2020Superjunction IGBT With Conductivity Modulation Actively Controlled by Two Separate Driving SignalsWei, Jin; Zhang, Meng; Chen, Kevin J.
2015Temperature Dependence of the Surface- and Buffer-Induced Current Collapse in GaN High-Electron Mobility Transistors on Si SubstrateZhang, Chuan; Wang, Maojun; Xie, Bing; Wen, Cheng P.; Wang, Jinyan; Hao, Yilong; Wu, Wengang; Chen, Kevin J.; Shen, Bo
2018Ultrathin-Barrier AlGaN/GaN Heterostructure: A Recess-Free Technology for Manufacturing High-Performance GaN-on-Si Power DevicesHuang, Sen; Liu, Xinyu; Wang, Xinhua; Kang, Xuanwu; Zhang, Jinhan; Fan, Jie; Shi, Jingyuan; Wei, Ke; Zheng, Yingkui; Gao, Hongwei; Sun, Qian; Wang, Maojun; Shen, Bo; Chen, Kevin J.