Showing results 33 to 52 of 315
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| Issue Date | Title | Author(s) |
| 1995 | Capacitance characteristics of the MOS structure with Fowler-Nordheim tunneling current | He, Yandong; Xu, Mingzhen; Tan, Changhua; Wang, Yangyuan |
| 2005 | Capacitive microwave MEMS switch | Zhang, Jinwen; Jin, Yufeng; Hao, Yilong; Wang, Wei; Tian, Dayu; Wang, Yangyuan |
| 2006 | A carrier-based analytic model for undoped (lightly doped) ultra-thin-body silicon-on-insulator (UTB-SOI) MOSFETs | He, Jin; Zhang, Xing; Zhang, Ganggang; Chan, Mansun; Wang, Yangyuan |
| 2006 | A carrier-based analytic model for undoped surrounding-gate MOSFETs | He, Jin; Zhang, Xing; Chan, Mansun; Wang, Yangyuan |
| 2006 | Carrier-based approach: A generous strategy to develop compact model of non-classical CMOS | He, Jin; Zhang, Xing; Chan, Mansun; Wang, Yangyuan |
| Dec-2021 | The Challenges and Emerging Technologies for Low-Power Artificial Intelligence IoT Systems | Ye, Le; Wang, Zhixuan; Liu, Ying; Chen, Peiyu; Li, Heyi; Zhang, Hao; Wu, Meng; He, Wei; Shen, Linxiao; Zhang, Yihan; Tan, Zhichao; Wang, Yangyuan; Huang, Ru |
| 1998 | Challenges for physical limitations in Si microelectronics | Wang, Yangyuan; Han, Ruqi; Liu, Xiaoyan; Kang, Jinfeng |
| 1998 | Challenges for physical limitations in Si microelectronics | Wang, Yangyuan; Han, Ruqi; Liu, Xiaoyan; Kang, Jinfeng |
| 2008 | Challenges of process technology in 32 nm technology node | Wu, Hanming; Wang, Guohua; Huang, Ru; Wang, Yangyuan |
| 2004 | Characteristic analysis of varactors based on SOI | Yan, Tao; Zhang, Guoyan; Huang, Ru; Wang, Yangyuan |
| 2008 | Characteristics and fluctuation of negative bias temperature instability in Si nanowire field-effect transistors | Wang, Runsheng; Huang, Ru; He, Yandong; Wang, Zhenhua; Jia, Gaosheng; Kim, Dong-Won; Park, Donggun; Wang, Yangyuan |
| 2010 | Characteristics of Gate Current Random Telegraph Signal Noise in SiON/HfO2/TaN p-Type Metal-Oxide-Semiconductor Field-Effect Transistors under Negative Bias Temperature Instability Stress Condition | Zhang, Liangliang; Liu, Changze; Wang, Runsheng; Huang, Ru; Yu, Tao; Zhuge, Jing; Kirsch, Paul; Tseng, Hsing-Huang; Wang, Yangyuan |
| 2010 | Characteristics of gate current random telegraph signal noise in SiON/HfO2/TaN p-type metal-oxide-semiconductor field-effect transistors under negative bias temperature instability stress condition | Zhang, Liangliang; Liu, Changze; Wang, Runsheng; Huang, Ru; Yu, Tao; Zhuge, Jing; Kirsch, Paul; Tseng, Hsing-Huang; Wang, Yangyuan |
| 1989 | Characteristics of TiSi thin film and TiSi/Poly-Si polycide gate structure | Tao, Jiang; Zhao, Tiemin; Zhang, Guobing; Wang, Yangyuan; Wang, Suofa; Li, Yonghong |
| 2011 | Characterization and Analysis of Gate-All-Around Si Nanowire Transistors for Extreme Scaling | Huang, Ru; Wang, Runsheng; Zhuge, Jing; Liu, Changze; Yu, Tao; Zhang, Liangliang; Huang, Xin; Ai, Yujie; Zou, Jinbin; Liu, Yuchao; Fan, Jiewen; Liao, Huailin; Wang, Yangyuan |
| 1993 | Charge-based capacitance model for thin film SOI short-channel MOSFET | Cheng, Yuhua; Wang, Yangyuan |
| 1995 | CMOS/SOI ICs simulation and parameter extraction | Gan, Xuewen; Xi, Xuemei; Li, Yimin; Wang, Yangyuan |
| 1997 | Collector compensative ion-implantation technology for polysilicon emitter transistors | He, Meihua; Zhang, Lichun; Wang, Yangyuan |
| 2008 | A comparative study on analog/RF performance of UTB GOI and SOI devices | Zhuge, Jing; An, Xia; Huang, Ru; Xiao, Han; Hou, Xiaoyu; Wang, Runsheng; Wang, Yangyuan |
| 2005 | A complete carrier-based non-charge-sheet analytic model for nano-scale undoped symmetric double-gate MOSFETs | He, Jin; Xing, Zhang; Wang, Yangyuan |
