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| Issue Date | Title | Author(s) |
| 2017 | A 140-mV Variation-Tolerant Deep Sub-Threshold SRAM in 65-nm CMOS | Sarfraz, Khawar; He, Jin; Chan, Mansun |
| 2011 | 3-D Numerical Simulation Study on 20 nm NMOSFET Design | Shi, Min; He, Jin; Liu, Zhiwei; Wang, Wenping; Zhao, Wei; Wang, Ruonan; Wu, Wen; Ma, Yong; Zhang, Dongwei; Bian, Wei; Chan, Mansun; Zhang, Xukai; Zhang, Lining |
| 2014 | 3-D Resistance Model for Phase-Change Memory Cell | Chen, Yihan; Kwong, Kit Chu; Lin, Xinnan; Song, Zhitang; Chan, Mansun |
| 2007 | 3-Dimensional integration for interconnect reduction in for nano-CMOS technologies | Chan, Mansun; Zhang, Shengdong; Lin, Xinnan; Wu, Xusheng; Chan, Philip C.-H. |
| 2023 | 3-Masks-Processed Sub-100 nm Amorphous InGaZnO Thin-Film Transistors for Monolithic 3D Capacitor-Less Dynamic Random Access Memories | Zhang, Yuqing; Li, Jiye; Li, Jinxiong; Huang, Tengyan; Guan, Yuhang; Zhang, Yuhan; Yang, Huan; Chan, Mansun; Wang, Xinwei; Lu, Lei; Zhang, Shengdong |
| 2007 | ALTRAS-CNFET: Full-band based quantum transport simulator for carbon nanotube field effect transistor engineering: From chirality to device performance | Tao, Yadong; Liu, Feng; Bian, Wei; Man, Tsz Yin; Chan, Mansun; He, Jin |
| Mar-2022 | Analysis of Carrier Behavior for Amorphous Indium Gallium Zinc Oxide After Supercritical Carbon Dioxide Treatment | Zhang, Jiaona; Zhang, Min; Chang, Kuan-Chang; Rong, Zhao; Zhang, Yuqing; Zhang, Shengdong; Chan, Mansun |
| 2002 | Analysis of cross-talk effect in SOI analog-digital mixed integrated circuits | Zhan, Guoyan; Huang, Ru; Chan, Mansun; Zhang, Xing; Wang, Yangyuan |
| 2009 | An Analytic Model of the Silicon-Based Nanowire Schottky Barrier MOSFET | Zhou, Xingye; Che, Yuchi; Zhang, Lining; He, Jin; Chan, Mansun |
| 2006 | An analytic model to account for quantum-mechanical effects of MOSFETs using a parabolic potential well approximation | He, Jin; Chan, Mansun; Zhang, Xing; Wang, Yangyuan |
| 2012 | An Analytical Charge Model for Double-Gate Tunnel FETs | Zhang, Lining; Lin, Xinnan; He, Jin; Chan, Mansun |
| 2016 | Analytical Current Model for Long-Channel Junctionless Double-Gate MOSFETs | Lin, Xinnan; Zhang, Baili; Xiao, Ying; Lou, Haijun; Zhang, Lining; Chan, Mansun |
| 2016 | Analytical Model of Channel Electric Field Profile in FinFET | Fang, Ming; He, Jin; Wu, Wen; Zhao, Wei; Wang, Ruonan; Chan, Mansun; He, Ping; Song, Lei |
| 2014 | Analytical model of the subthreshold behavior in short-channel junctionless cylindrical surrounding-gate mosfets | Zhang, Baili; Lou, Haijun; Li, Dan; Lin, Xinnan; Chan, Mansun |
| 2010 | Analytical solution of subthreshold channel potential of gate underlap cylindrical gate-all-around MOSFET | Zhang, Lining; Ma, Chenyue; He, Jin; Lin, Xinnan; Chan, Mansun |
| 2010 | Analytical subthreshold channel potential model of asymmetric gate underlap gate-all-around MOSFET | Wang, Shaodi; Guo, Xinjie; Zhang, Lining; Zhang, Chenfei; He, Frank; Chan, Mansun |
| 2013 | Application of multi-frequency test and neural network to fault diagnosis in analog circuits | Wang, Cheng; Ye, Yun; Liang, Hai-Lang; Wang, Hao; Mei, Jinhe; He, Jin; Chan, Mansun |
| 2007 | An approximate carrier-based compact model for fully depleted surrounding-gate MOSFETs with finite doping body | He, Jin; Liu, Feng; Bian, Wei; Tao, Yadong; Wu, Wen; Lu, Kailiang; Wang, Ting; Chan, Mansun |
| 2010 | Bandstructures of unstrained and strained silicon nanowire | Zhang, Lining; Lou, Haijun; Liu, Zhiwei; He, Frank; Chan, Mansun |
| 2000 | Behavior of narrow-width SOI MOSFET's with MESA isolation | Wang, Hongmei; Chan, Mansun; Wang, Yangyuan; Ko, Ping K. |
