Browsing by Author Chan, Mansun

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Issue DateTitleAuthor(s)
2017A 140-mV Variation-Tolerant Deep Sub-Threshold SRAM in 65-nm CMOSSarfraz, Khawar; He, Jin; Chan, Mansun
20113-D Numerical Simulation Study on 20 nm NMOSFET DesignShi, Min; He, Jin; Liu, Zhiwei; Wang, Wenping; Zhao, Wei; Wang, Ruonan; Wu, Wen; Ma, Yong; Zhang, Dongwei; Bian, Wei; Chan, Mansun; Zhang, Xukai; Zhang, Lining
20143-D Resistance Model for Phase-Change Memory CellChen, Yihan; Kwong, Kit Chu; Lin, Xinnan; Song, Zhitang; Chan, Mansun
20073-Dimensional integration for interconnect reduction in for nano-CMOS technologiesChan, Mansun; Zhang, Shengdong; Lin, Xinnan; Wu, Xusheng; Chan, Philip C.-H.
20233-Masks-Processed Sub-100 nm Amorphous InGaZnO Thin-Film Transistors for Monolithic 3D Capacitor-Less Dynamic Random Access MemoriesZhang, Yuqing; Li, Jiye; Li, Jinxiong; Huang, Tengyan; Guan, Yuhang; Zhang, Yuhan; Yang, Huan; Chan, Mansun; Wang, Xinwei; Lu, Lei; Zhang, Shengdong
2007ALTRAS-CNFET: Full-band based quantum transport simulator for carbon nanotube field effect transistor engineering: From chirality to device performanceTao, Yadong; Liu, Feng; Bian, Wei; Man, Tsz Yin; Chan, Mansun; He, Jin
Mar-2022Analysis of Carrier Behavior for Amorphous Indium Gallium Zinc Oxide After Supercritical Carbon Dioxide TreatmentZhang, Jiaona; Zhang, Min; Chang, Kuan-Chang; Rong, Zhao; Zhang, Yuqing; Zhang, Shengdong; Chan, Mansun
2002Analysis of cross-talk effect in SOI analog-digital mixed integrated circuitsZhan, Guoyan; Huang, Ru; Chan, Mansun; Zhang, Xing; Wang, Yangyuan
2009An Analytic Model of the Silicon-Based Nanowire Schottky Barrier MOSFETZhou, Xingye; Che, Yuchi; Zhang, Lining; He, Jin; Chan, Mansun
2006An analytic model to account for quantum-mechanical effects of MOSFETs using a parabolic potential well approximationHe, Jin; Chan, Mansun; Zhang, Xing; Wang, Yangyuan
2012An Analytical Charge Model for Double-Gate Tunnel FETsZhang, Lining; Lin, Xinnan; He, Jin; Chan, Mansun
2016Analytical Current Model for Long-Channel Junctionless Double-Gate MOSFETsLin, Xinnan; Zhang, Baili; Xiao, Ying; Lou, Haijun; Zhang, Lining; Chan, Mansun
2016Analytical Model of Channel Electric Field Profile in FinFETFang, Ming; He, Jin; Wu, Wen; Zhao, Wei; Wang, Ruonan; Chan, Mansun; He, Ping; Song, Lei
2014Analytical model of the subthreshold behavior in short-channel junctionless cylindrical surrounding-gate mosfetsZhang, Baili; Lou, Haijun; Li, Dan; Lin, Xinnan; Chan, Mansun
2010Analytical solution of subthreshold channel potential of gate underlap cylindrical gate-all-around MOSFETZhang, Lining; Ma, Chenyue; He, Jin; Lin, Xinnan; Chan, Mansun
2010Analytical subthreshold channel potential model of asymmetric gate underlap gate-all-around MOSFETWang, Shaodi; Guo, Xinjie; Zhang, Lining; Zhang, Chenfei; He, Frank; Chan, Mansun
2013Application of multi-frequency test and neural network to fault diagnosis in analog circuitsWang, Cheng; Ye, Yun; Liang, Hai-Lang; Wang, Hao; Mei, Jinhe; He, Jin; Chan, Mansun
2007An approximate carrier-based compact model for fully depleted surrounding-gate MOSFETs with finite doping bodyHe, Jin; Liu, Feng; Bian, Wei; Tao, Yadong; Wu, Wen; Lu, Kailiang; Wang, Ting; Chan, Mansun
2010Bandstructures of unstrained and strained silicon nanowireZhang, Lining; Lou, Haijun; Liu, Zhiwei; He, Frank; Chan, Mansun
2000Behavior of narrow-width SOI MOSFET's with MESA isolationWang, Hongmei; Chan, Mansun; Wang, Yangyuan; Ko, Ping K.