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| Issue Date | Title | Author(s) |
| 2014 | 900 V/1.6 m Omega . cm(2) Normally Off Al2O3/GaN MOSFET on Silicon Substrate | Wang, Maojun; Wang, Ye; Zhang, Chuan; Xie, Bing; Wen, Cheng P.; Wang, Jinyan; Hao, Yilong; Wu, Wengang; Chen, Kevin J.; Shen, Bo |
| 2014 | Al2O3/AlN/GaN MOS-Channel-HEMTs With an AlN Interfacial Layer | Liu, Shenghou; Yang, Shu; Tang, Zhikai; Jiang, Qimeng; Liu, Cheng; Wang, Maojun; Chen, Kevin J. |
| 2006 | Characterization and attenuation mechanism of CMOS-compatible micromachined edge-suspended coplanar waveguides on low-resistivity silicon substrate | Leung, Lydia L. W.; Hon, Wai-Cheong; Zhang, Jinwen; Chen, Kevin J. |
| 2011 | Characterization of AlGaN/GaN Cantilevers Fabricated with Deep-Release Techniques | Lv, Jianan; Yang, Zhenchuan; Yan, Guizhen; Cai, Yong; Zhang, Baoshun; Chen, Kevin J. |
| Jul-2021 | Decoupling of Forward and Reverse Turn-on Threshold Voltages in Schottky-Type p-GaN Gate HEMTs | Chen, Junting; Hua, Mengyuan; Wang, Chengcai; Liu, Ling; Li, Lingling; Wei, Jin; Zhang, Li; Zheng, Zheyang; Chen, Kevin J. |
| 2022 | Dynamic Interplays of Gate Junctions in Schottky-type p-GaN Gate Power HEMTs during Switching Operation | Xu, Han; Zheng, Zheyang; Zhang, Li; Sun, Jiahui; Yang, Song; He, Jiabei; Wei, Jin; Chen, Kevin J. |
| 2020 | E-mode p-GaN Gate HEMT with p-FET Bridge for Higher V-TH and Enhanced V-TH Stability | Hua, Mengyuan; Chen, Junting; Wang, Chengcai; Liu, Ling; Li, Lingling; Zhao, Junlei; Jiang, Zuoheng; Wei, Jin; Zhang, Li; Zheng, Zheyang; Chen, Kevin J. |
| 2013 | Effects of interface oxidation on the transport behavior of the two-dimensional-electron-gas in AlGaN/GaN heterostructures by plasma-enhanced-atomic-layer-deposited AIN passivation | Huang, Sen; Wei, Ke; Tang, Zhikai; Yang, Shu; Liu, Cheng; Guo, Lei; Shen, Bo; Zhang, Jinhan; Kong, Xin; Liu, Guoguo; Zheng, Yingkui; Liu, Xinyu; Chen, Kevin J. |
| 2012 | Enhancement-Mode Operation of Nanochannel Array (NCA) AlGaN/GaN HEMTs | Liu, Shenghou; Cai, Yong; Gu, Guodong; Wang, Jinyan; Zeng, Chunhong; Shi, Wenhua; Feng, Zhihong; Qin, Hua; Cheng, Zhiqun; Chen, Kevin J.; Zhang, Baoshun |
| 2009 | Fabrication of Large-Area Suspended MEMS Structures Using GaN-on-Si Platform | Lv, Jianan; Yang, Zhenchuan; Yan, Guizhen; Lin, Wenkui; Cai, Yong; Zhang, Baoshun; Chen, Kevin J. |
| 2007 | Fabrication of position-controllable GaN nanostructures | Yang, Zhenchuan; Zhang, Baoshun; Lau, Kei May; Chen, Kevin J. |
| 2008 | FABRICATION OF SUSPENDING GAN MICROSTRUCTURES WITH COMBINATIONS OF ANISOTROPIC AND ISOTROPIC DRY ETCHING TECHNIQUES | Lv, Jianan; Yang, Zhenchuan; Chen, Kevin J. |
| 2007 | Fabrication of vertical position-controllable GaN nanowires on (111) si substrate | Wang, Congshun; Yang, Zhenchuan; Zhang, Baoshun; Wang, Yong; Wang, Hui; Lau, Kei May; Chen, Kevin J. |
| 2012 | Fe-doped InN layers grown by molecular beam epitaxy | Wang, Xinqiang; Liu, Shitao; Ma, Dingyu; Zheng, Xiantong; Chen, Guang; Xu, Fujun; Tang, Ning; Shen, Bo; Zhang, Peng; Cao, Xingzhong; Wang, Baoyi; Huang, Sen; Chen, Kevin J.; Zhou, Shengqiang; Yoshikawa, Akihiko |
| Jul-2021 | Gallium nitride-based complementary logic integrated circuits | Zheng, Zheyang; Zhang, Li; Song, Wenjie; Feng, Sirui; Xu, Han; Sun, Jiahui; Yang, Song; Chen, Tao; Wei, Jin; Chen, Kevin J. |
| 1-Apr-2022 | GaN HEMTs on low resistivity Si substrates with thick buffer layers for RF signal amplification and power conversion | Song, Wenjie; Zhang, Jie; Zheng, Zheyang; Feng, Sirui; Yang, Xuelin; Shen, Bo; Chen, Kevin J. |
| 2021 | GaN Integrated Bridge Circuits on Bulk Silicon Substrate: Issues and Proposed Solution | Wei, Jin; Zhang, Meng; Lyu, Gang; Chen, Kevin J. |
| Aug-2022 | GaN on Engineered Bulk Si (GaN-on-EBUS) Substrate for Monolithic Integration of High-/Low-Side Switches in Bridge Circuits | Lyu, Gang; Wei, Jin; Song, Wenjie; Zheng, Zheyang; Zhang, Li; Zhang, Jie; Feng, Sirui; Chen, Kevin J. |
| Nov-2022 | GaN on Engineered Bulk Silicon Power Integration Platform With Avalanche Capability Enabled by Built-in Si PN Junctions | Lyu, Gang; Feng, Sirui; Zhang, Li; Chen, Tao; Wei, Jin; Chen, Kevin J. |
| 2021 | A GaN Power Integration Platform Based on Engineered Bulk Si Substrate with Eliminated Crosstalk between High-Side and Low-Side HEMTs | Lyu, Gang; Wei, Jin; Song, Wenjie; Zheng, Zheyang; Zhang, Li; Zhang, Jie; Cheng, Yan; Feng, Sirui; Ng, Yat Hon; Chen, Tao; Zhong, Kailun; Liu, Jiapeng; Zeng, Rong; Chen, Kevin J. |
