Browsing by Author Chen, Weihua

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Issue DateTitleAuthor(s)
2009Analysis of optical gain property in the InGaN/GaN triangular shaped quantum well under the piezoelectric fieldYang, Ziwen; Li, Rui; Wei, Qiyuan; Yu, Tao; Zhang, Yanzhao; Chen, Weihua; Hu, Xiaodong
2007Cathodoluminescence study of InGaN MQW laser diodes using laser lift-off techniqueLi, Rui; Chen, Weihua; Kang, Xiangning; Xu, Ke; Xu, Jun; Yang, Zhijian; Nie, Ruijuan; Yu, Tongjun; Chen, Zhizhong; Qin, Zhixin; Zhang, Guoyi; Gan, Zizhao; Hu, Xiaodong
2007Characteristics and structural optimization of multi-quantum-well structure of GaN-based laser diodeWei, Qiyuan; Li, Ti; Wang, Yanjie; Chen, Weihua; Li, Rui; Pan, Yaobo; Xu, Ke; Zhang, Bei; Yang, Zhijian; Hu, Xiaodong
2012Defect Reduction via Selective Lateral Epitaxy of GaN on an Innovative Masked Structure with Serpentine ChannelsLi, Lei; Liu, Justin P. C.; Liu, Lei; Li, Ding; Wang, Lei; Wan, Chenghao; Chen, Weihua; Yang, Zhijian; Xie, Yahong; Hu, Xiaodong; Zhang, Guoyi
2016Dislocation Reduction and Stress Relaxation of GaN and InGaN Multiple Quantum Wells with Improved Performance via Serpentine Channel Patterned MaskJi, Qingbin; Li, Lei; Zhang, Wei; Wang, Jia; Liu, Peichi; Xie, Yahong; Yan, Tongxing; Yang, Wei; Chen, Weihua; Hu, Xiaodong
2009Donor-related cathodoluminescence of p-AlGaN electron blocking layer embedded in ultraviolet laser diode structureLi, Rui; Zhang, Jingming; Chen, Li; Zhao, Huabo; Yang, Ziwen; Yu, Tao; Li, Ding; Liu, Zhicheng; Chen, Weihua; Yang, Zhijian; Zhang, Guoyi; Gan, Zizhao; Hu, Xiaodong; Wei, Qiyuan; Li, Ti; Ponce, F. A.
Jan-2023Effect of Amorphous Photonic Structure Surface Mounted on Luminous Performances of White LEDHuang, Fei; Chen, Yiyong; Nie, Jingxin; Shen, Chunsheng; Yuan, Jiulong; Guo, Yukun; Dong, Boyan; Liu, Lu; Chen, Weihua; Chen, Zhizhong; Shen, Bo
Dec-2021The effects of different bedroom light environments in the evening on adolescentsWen, Peijun; Tan, Fuyun; Wu, Meng; Cai, Qijun; Xu, Ruiping; Zhang, Xiaowen; Wang, Yongzhi; Khan, Muhammad Saddique Akbar; Chen, Weihua; Hu, Xiaodong
2024Efficient InGaN-Based Red Light-Emitting Diodes by Modulating Trench DefectsPan, Zuojian; Chen, Zhizhong; Zhang, Haodong; Yang, Han; Deng, Chuhan; Dong, Boyan; Wang, Daqi; Li, Yuchen; Lin, Hai; Chen, Weihua; Jiao, Fei; Kang, Xiangning; Jia, Chuanyu; Liang, Zhiwen; Wang, Qi; Zhang, Guoyi; Shen, Bo
Sep-2020Enabling an intrinsically safe and high-energy-density 4.5 V-class Li-ion battery with nonflammable electrolyteZeng, Ziqi; Liu, Xingwei; Jiang, Xiaoyu; Liu, Zhenjie; Peng, Zhangquan; Feng, Xiangming; Chen, Weihua; Xia, Dingguo; Ai, Xinping; Yang, Hanxi; Cao, Yuliang
2012Enhanced Hole Transport in Mg-Doped AlxGa1-xN/GaN Superlattices by Strain and Period ModulationsLiu, Ningyang; Li, Ding; Wang, Lei; Liu, Lei; Yang, Wei; Li, Lei; Cao, Wenyu; Lu, Cimang; Wan, Chenghao; Chen, Weihua; Hu, Xiaodong
27-Sep-2021Enhanced light extraction efficiency of an LED package by a surface-mounted amorphous photonic structureChen, Yiyong; Chen, Zhizhong; Jiao, Fei; Zhan, Jinglin; Pan, Zuojian; Deng, Chuhan; Xi, Xin; Kang, Xiangning; Chen, Weihua; Wang, Qi; Tong, Yuzhen; Zhang, Guoyi; Shen, Bo
2012Enhancement of light-emission efficiency of ultraviolet InGaN/GaN multiple quantum well light emitting diode with InGaN underlying layerLiu, Lei; Wang, Lei; Lu, Cimang; Li, Ding; Liu, Ningyang; Li, Lei; Yang, Wei; Cao, Wenyu; Chen, Weihua; Du, Weimin; Hu, Xiaodong; Feng, Zhe Chuan; Huang, Wei; Lee, Yueh-Chien
2012Erratum: Defect reduction via selective lateral epitaxy of GaN on an innovative masked structure with serpentine channels (Applied Physics Express (2012) 5 (051001))Li, Lei; Liu, Justin P.C.; Liu, Lei; Li, Ding; Wang, Lei; Wan, Chenghao; Chen, Weihua; Yang, Zhijian; Xie, Yahong; Hu, Xiaodong; Zhang, Guoyi
2009High spontaneous emission rate asymmetrically graded 480 nm InGaN/GaN quantum well light-emitting diodesWang, Lei; Li, Rui; Yang, Ziwen; Li, Ding; Yu, Tao; Liu, Ningyang; Liu, Lei; Chen, Weihua; Hu, Xiaodong
2012Improvement of hole injection and electron overflow by a tapered AlGaN electron blocking layer in InGaN-based blue laser diodesYang, Wei; Li, Ding; Liu, Ningyang; Chen, Zhao; Wang, Lei; Liu, Lei; Li, Lei; Wan, Chenghao; Chen, Weihua; Hu, Xiaodong; Du, Weimin
2013Inclined Dislocation Generation in Compressive-Strain-Enhanced Mg-Doped GaN/Al0.15Ga0.85N Superlattice with AlN InterlayerLi, Lei; Li, Ding; Wei, Qiyuan; Chen, Weihua; Yang, Zhijian; Wu, Jiejun; Zhang, Guoyi; Hu, Xiaodong
2012The influence of AlN interlayers on the microstructural and electrical properties of p-type AlGaN/GaN superlattices grown on GaN/sapphire templatesLi, Lei; Liu, Lei; Wang, Lei; Li, Ding; Song, Jie; Liu, Ningyang; Chen, Weihua; Wang, Yuzhou; Yang, Zhijian; Hu, Xiaodong
2011Influence of indium composition in the prestrained InGaN interlayer on the strain relaxation of InGaN/GaN multiple quantum wells in laser diode structuresLiu, Lei; Wang, Lei; Li, Ding; Liu, Ningyang; Li, Lei; Cao, Wenyu; Yang, Wei; Wan, Chenghao; Chen, Weihua; Du, Weimin; Hu, Xiaodong; Feng, Zhe Chuan
2011Influence of indium composition in the prestrained InGaN interlayer on the strain relaxation of InGaN/GaN multiple quantum wells in laser diode structuresLiu, Lei; Wang, Lei; Li, Ding; Liu, Ningyang; Li, Lei; Cao, Wenyu; Yang, Wei; Wan, Chenghao; Chen, Weihua; Du, Weimin; Hu, Xiaodong; Feng, Zhe Chuan