| Issue Date | Title | Author(s) |
| 15-Jun-2020 | 2 in. Free-standing GaN grown by HVPE with sputtered AlN buffer on GaAs substrate | Zhu, Xingyu; Wu, Jiejun; Cheng, Yutian; Dong, Boyu; Guo, Bingliang; Li, Mengda; Zhao, Qiyue; Zhang, Guoyi; Yu, Tongjun |
| 2018 | Anisotropic Fracture Toughness of Bulk GaN | Cheng, Yutian; Cai, Duanjun; Wang, Hui; Wu, Jiejun; Liu, Xiangshun; Zhang, Guoyi; Yu, Tongjun |
| 2019 | Critical thickness of GaN film in controllable stress-induced self-separation for preparing native GaN substrates | Li, Mengda; Cheng, Yutian; Yu, Tongjun; Wu, Jiejun; He, Jinmi; Liu, Nanliu; Han, Tong; Zhang, Guoyi |
| 2016 | Exceptionally long GaN sub-micrometer rods grown by HVPE on a MOCVD-GaN rod template | Cheng, Yutian; Zong, Hua; Wu, Jiejun; Liu, Peng; Han, Tong; Yu, Tongjun; Hu, Xiaodong; Zhang, Guoyi |
| 2016 | Fluorine plasma treatment induced deep level traps and their effect on current transportation in Al0.83In0.17N/AlN/GaN Schottky barrier diodes | Xiang, Yong; Yu, Tongjun; Ji, Cheng; Cheng, Yutian; Yang, Xuelin; Kang, Xiangning; Shen, Bo; Zhang, Guoyi |
| 2016 | Grouped and Multistep Nanoheteroepitaxy: Toward High-Quality GaN on Quasi-Periodic Nano-Mask | Feng, Xiaohui; Yu, Tongjun; Wei, Yang; Ji, Cheng; Cheng, Yutian; Zong, Hua; Wang, Kun; Yang, Zhijian; Kang, Xiangning; Zhang, Guoyi; Fan, Shoushan |
| 2016 | High uniform growth of 4-inch GaN wafer via flow field optimization by HVPE | Cheng, Yutian; Liu, Peng; Wu, Jiejun; Xiang, Yong; Chen, Xinjuan; Ji, Cheng; Yu, Tongjun; Zhang, Guoyi |
| 2017 | High-performance near-UV LED grown by carbon nanotube assisted nanoheteroepitaxy | Feng, Xiaohui; Wang, Kun; Cheng, Yutian; Wei, Yang; Yu, Tongjun |
| 2016 | HVPE homoepitaxial growth of high quality bulk GaN using acid wet etching method and its mechanism analysis | Liu, Nanliu; Cheng, Yutian; Wu, Jiejun; Li, Xingbin; Yu, Tongjun; Xiong, Huan; Li, Wenhui; Chen, Jiao; Zhang, Guoyi |
