| Issue Date | Title | Author(s) |
| 2010 | AlGaN/GaN dual gate MOS HFET for power device applications | Gong, Rumin; Wang, Jinyan; Liu, Shenghou; Dong, Zhihua; Wen, Cheng P.; Yu, Min; Cai, Yong; Zhang, Baoshun |
| 2010 | Analysis of surface roughness in Ti/Al/Ni/Au Ohmic contact to AlGaN/GaN high electron mobility transistors | Gong, Rumin; Wang, Jinyan; Liu, Shenghou; Dong, Zhihua; Yu, Min; Wen, Cheng P.; Cai, Yong; Zhang, Baoshun |
| 2010 | Analysis on the new mechanisms of low resistance stacked Ti/Al Ohmic contact structure on AlGaN/GaN HEMTs | Gong, Rumin; Wang, Jinyan; Dong, Zhihua; Liu, Shenghou; Yu, Min; Wen, Cheng P.; Hao, Yilong; Shen, Bo; Cai, Yong; Zhang, Baoshun; Zhang, Jincheng |
| Apr-2023 | Current Drops in CF4 Plasma-Treated AlGaN/GaN Heterojunction in Polar Gas Ambient | Ma, Ying; Chen, Liang; Dong, Zhihua; Hong, Yifang; Xiao, Yang; Xin, Yijie; Zhang, Bin; Qin, Hua; Zhang, Ting; Zhang, Xiaodong; Yu, Guohao; Cheng, Zhiqun; Mao, Lingfeng; Cai, Yong |
| 2008 | Enhanced device performance of AlGaN/GaN HEMTs using thermal oxidation of electron-beam deposited Aluminum for gate oxide | Chen, Hongwei; Wang, Jinyan; Xu, Chuan; Yu, Min; Fu, Yang; Dong, Zhihua; Xu, Fujun; Hao, Yilong; Wen, Cheng P. |
| 2011 | Enhanced Device Performance of AlGaN/GaN High Electron Mobility Transistors with Thermal Oxidation Treatment | Liu, Shenghou; Wang, Jinyan; Gong, Rumin; Lin, Shuxun; Dong, Zhihua; Yu, Min; Wen, C. P.; Zeng, Chunhong; Cai, Yong; Zhang, Baoshun; Xu, Fujun; Zhang, Jincheng; Shen, Bo |
| 2011 | Enhanced device performance of AlGaN/GaN high electron mobility transistors with thermal oxidation treatment | Liu, Shenghou; Wang, Jinyan; Gong, Rumin; Lin, Shuxun; Dong, Zhihua; Yu, Min; Wen, C.P.; Zeng, Chunhong; Cai, Yong; Zhang, Baoshun; Xu, Fujun; Zhang, Jincheng; Shen, Bo |
| 2015 | Establishment of a Network-Based Intra-Hospital Virtual Cancer Biobank | Zhang, Lianhai; Wu, Xiaojiang; Hu, Ying; Wang, Xiaohong; He, Zhonghu; Xie, Yuntao; Pan, Kaifeng; Wang, Ning; Dong, Zhihua; Zhang, Lei; Ji, Jiafu |
| 2010 | High breakdown AlGaN/GaN MOSHEMT with thermal oxidized Ni/Ti as gate insulator | Dong, Zhihua; Wang, Jinyan; Wen, C. P.; Gong, Danian; Li, Ying; Yu, Min; Hao, Yilong; Xu, Fujun; Shen, Bo; Wang, Yangyuan |
| 2012 | High temperature induced failure in Ti/Al/Ni/Au Ohmic contacts on AlGaN/GaN heterostructure | Dong, Zhihua; Wang, Jinyan; Wen, C. P.; Liu, Shenghou; Gong, Rumin; Yu, Min; Hao, Yilong; Xu, Fujun; Shen, Bo; Wang, Yangyuan |
| 2007 | The leakage current of the Schottky contact on the mesa edge of AlGaN/GaN heterostructure | Xu, Chuan; Wang, Jinyan; Chen, Hongwei; Xu, Fujun; Dong, Zhihua; Hao, Yilong; Wen, Cheng P. |
| 2010 | Multiple Ti/Al stacks induced thermal stability enhancement in Ti/Al/Ni/Au Ohmic contact on AlGaN/GaN heterostructure | Dong, Zhihua; Wang, Jinyan; Gong, Rumin; Liu, Shenghou; Wen, C.P.; Yu, Min; Xu, Fujun; Hao, Yilong; Shen, Bo; Wang, Yangyuan |
| 2008 | Novel structural Ti/Al-based ohmic contacts on AlGaN/GaN heterostructures | Dong, Zhihua; Wang, Jinyan; Yu, Min; Hao, Yilong; Wen, C. P.; Wang, Yangyuan |
