Browsing by Author Ge, Weikun

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Issue DateTitleAuthor(s)
8-Jun-2020Al diffusion at AlN/Si interface and its suppression through substrate nitridationWei, Lai; Yang, Xuelin; Shen, Jianfei; Liu, Danshuo; Cai, Zidong; Ma, Cheng; He, Xiaoguang; Tang, Jun; Qi, Shengli; Xu, Fujun; Wang, Xinqiang; Ge, Weikun; Shen, Bo
2017Anomalous surface potential behavior observed in InN by photo-assisted Kelvin probe force microscopySun, Xiaoxiao; Wei, Jiandong; Wang, Xinqiang; Wang, Ping; Li, Shunfeng; Waag, Andreas; Li, Mo; Zhang, Jian; Ge, Weikun; Shen, Bo
Jun-2022Atomic-Scale Investigation of the Lattice-Asymmetry-Driven Anisotropic Sublimation in GaNSheng, Shanshan; Wang, Tao; Liu, Shangfeng; Liu, Fang; Sheng, Bowen; Yuan, Ye; Li, Duo; Chen, Zhaoying; Tao, Renchun; Chen, Ling; Zhang, Baoqing; Yang, Jiajia; Wang, Ping; Wang, Ding; Sun, Xiaoxiao; Zhang, Jingmin; Xu, Jun; Ge, Weikun; Shen, Bo; Wang, Xinqiang
2016Circular Photogalvanic effect in CdSe Nanowires at Room TemperatureTang, Ning; Zhang, Shan; Duan, Junxi; He, Xin; Dai, Lun; Ge, Weikun; Shen, Bo
Feb-2021Compressive strain induced enhancement of transverse-electric polarized ultraviolet light emission for AlGaN quantum wellsZhang, Shixiong; Zhang, Yunfan; Tang, Ning; Wang, Weiying; Chen, Xinjuan; Fu, Lei; He, Chenguang; Lv, Yuanjie; Feng, Zhihong; Xu, Fujun; Yu, Tongjun; Ge, Weikun; Shen, Bo
19-Apr-2021Control of dislocations in heteroepitaxial AlN films by extrinsic supersaturated vacancies introduced through thermal desorption of heteroatomsWang, Jiaming; Xu, Fujun; Liu, Baiyin; Lang, Jing; Zhang, Na; Kang, Xiangning; Qin, Zhixin; Yang, Xuelin; Wang, Xinqiang; Ge, Weikun; Shen, Bo
Mar-2022Correlation between electrical properties and growth dynamics for Si-doped Al-rich AlGaN grown by metal-organic chemical vapor depositionLiu, Baiyin; Xu, Fujun; Wang, Jiaming; Lang, Jing; Wang, Liubing; Fang, Xuzhou; Yang, Xuelin; Kang, Xiangning; Wang, Xinqiang; Qin, Zhixin; Ge, Weikun; Shen, Bo
2019Deep Ultraviolet Light Source from Ultrathin GaN/AlN MQW Structures with Output Power Over 2 WattWang, Yixin; Rong, Xin; Ivanov, Sergey; Jmerik, Valentin; Chen, Zhaoying; Wang, Hui; Wang, Tao; Wang, Ping; Jin, Peng; Chen, Yanan; Kozlovsky, Vladimir; Sviridov, Dmitry E.; Zverev, Michail; Zhdanova, Elena; Gamov, Nikita; Studenov, Valentin; Miyake, Hideto; Li, Hongwei; Guo, Shiping; Yang, Xuelin; Xu, Fujun; Yu, Tongjun; Qin, Zhixin; Ge, Weikun; Shen, Bo; Wang, Xinqiang
Apr-2022Deep-Ultraviolet Micro-LEDs Exhibiting High Output Power and High Modulation Bandwidth SimultaneouslyLi, Duo; Liu, Shangfeng; Qian, Zeyuan; Liu, Quanfeng; Zhou, Kang; Liu, Dandan; Sheng, Shanshan; Sheng, Bowen; Liu, Fang; Chen, Zhaoying; Wang, Ping; Wang, Tao; Rong, Xin; Tao, Renchun; Kang, Jianbin; Chen, Feiliang; Kang, Junjie; Yuan, Ye; Wang, Qi; Sun, Ming; Ge, Weikun; Shen, Bo; Tian, Pengfei; Wang, Xinqiang
2018Determination of the transition point from electron accumulation to depletion at the surface of InxGa1-xN filmsSun, Xiaoxiao; Wang, Xinqiang; Liu, Shitao; Wang, Ping; Wang, Ding; Zheng, Xiantong; Sang, Liwen; Sumiya, Masatomo; Ueda, Shigenori; Li, Mo; Zhang, Jian; Ge, Weikun; Shen, Bo
29-Jun-2020Direct evidence of hydrogen interaction with carbon: C-H complex in semi-insulating GaNWu, Shan; Yang, Xuelin; Zhang, Qing; Shang, Qiuyu; Huang, Huayang; Shen, Jianfei; He, Xiaoguang; Xu, Fujun; Wang, Xinqiang; Ge, Weikun; Shen, Bo
2017Direct evidence of recombination between electrons in InGaN quantum discs and holes in p-type GaNSun, Xiaoxiao; Wang, Xinqiang; Wang, Ping; Wang, Tao; Sheng, Bowen; Zheng, Xiantong; Li, Mo; Zhang, Jian; Yang, Xuelin; Xu, Fujun; Ge, Weikun; Shen, Bo
2013Effect of Grain Boundary Scattering on Electron Mobility of N-Polarity InN FilmsZhang, Yuewei; Wang, Xinqiang; Zheng, Xiantong; Chen, Guang; Ma, Dingyu; Xu, Fujun; Tang, Ning; Ge, Weikun; Shen, Bo
2016Effect of stress on the Al composition evolution in AlGaN grown using metal organic vapor phase epitaxyHe, Chenguang; Qin, Zhixin; Xu, Fujun; Zhang, Lisheng; Wang, Jiaming; Hou, Mengjun; Zhang, Shan; Wang, Xinqiang; Ge, Weikun; Shen, Bo
Jun-2020Effective Manipulation of Spin Dynamics by Polarization Electric Field in InGaN/GaN Quantum Wells at Room TemperatureLiu, Xingchen; Tang, Ning; Zhang, Shixiong; Zhang, Xiaoyue; Guan, Hongming; Zhang, Yunfan; Qian, Xuan; Ji, Yang; Ge, Weikun; Shen, Bo
2014Effects of light illumination on electron velocity of AlGaN/GaN heterostructures under high electric fieldGuo, Lei; Yang, Xuelin; Feng, Zhihong; Lv, Yuanjie; Cheng, Jianpeng; Sang, Ling; Xu, Fujun; Tang, Ning; Wang, Xinqiang; Ge, Weikun; Shen, B.
Feb-2021Electrical Spin Injection into the 2D Electron Gas in AlN/GaN Heterostructures with Ultrathin AlN Tunnel BarrierZhang, Xiaoyue; Tang, Ning; Yang, Liuyun; Fang, Chi; Wan, Caihua; Liu, Xingchen; Zhang, Shixiong; Zhang, Yunfan; Wang, Xinqiang; Lu, Yuan; Ge, Weikun; Han, Xiufeng; Shen, Bo
2014Electronic properties of polycrystalline graphene under large local strainHe, Xin; Gao, Li; Tang, Ning; Duan, Junxi; Mei, Fuhong; Meng, Hu; Lu, Fangchao; Xu, Fujun; Wang, Xinqiang; Yang, Xuelin; Ge, Weikun; Shen, Bo
2013Enhanced Anisotropic Effective g Factors of an Al10.25Ga0.75N/GaN Heterostructure Based Quantum Point ContactLu, Fangchao; Tang, Ning; Huang, Shaoyun; Larsson, Marcus; Maximov, Ivan; Graczyk, Mariusz; Duan, Junxi; Liu, Sidong; Ge, Weikun; Xu, Fujun; Shen, Bo
2016Enhancement of optical polarization degree of AlGaN quantum wells by using staggered structureWang, Weiying; Lu, Huimin; Fu, Lei; He, Chenguang; Wang, Mingxing; Tang, Ning; Xu, Fujun; Yu, Tongjun; Ge, Weikun; Shen, Bo