Browsing by Author He, Jin

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Issue DateTitleAuthor(s)
2017A 140-mV Variation-Tolerant Deep Sub-Threshold SRAM in 65-nm CMOSSarfraz, Khawar; He, Jin; Chan, Mansun
20012-dimensional analysis of surface electric field profile of planar junction with single-step field-plate termination structureHe, Jin; Zhang, Xing; Huang, Ru; Wang, Yang-Yuan
20113-D Numerical Simulation Study on 20 nm NMOSFET DesignShi, Min; He, Jin; Liu, Zhiwei; Wang, Wenping; Zhao, Wei; Wang, Ruonan; Wu, Wen; Ma, Yong; Zhang, Dongwei; Bian, Wei; Chan, Mansun; Zhang, Xukai; Zhang, Lining
2019An 8-Channel Wearable EEGW Acquisition Front-End IC with Integrated Multi-FunctionsRen, Yuan; He, Jin; Liu, Jingjing; Pan, Jun; Wang, Xiaomeng; Li, Chunlai
2011An accurate method to extract and separate interface and gate oxide traps by the MOSFET subthreshold currentZhang, Chenfei; Ma, Chenyue; Xu, Jiaojiao; Wang, Ruonan; Zhao, Xiaojin; Gu, Xin; Zhang, Xiufang; Wu, Wen; Wang, Wenping; Zhao, Wei; Ma, Yong; Wang, Ruonan; Zhang, Dongwei; Bian, Wei; Yang, Guozeng; Yan, Zhang; Liu, Zhiwei; Ma, Yong; He, Jin
2013Active pixel CMOS image sensor with single transistor architectureLiang, Hailang; Zhang, Dongwei; Zhang, Guoan; He, Jin; Su, Yanmei; Zhang, Aixi
2007ALTRAS-CNFET: Full-band based quantum transport simulator for carbon nanotube field effect transistor engineering: From chirality to device performanceTao, Yadong; Liu, Feng; Bian, Wei; Man, Tsz Yin; Chan, Mansun; He, Jin
2008Analog/RF Performance analysis of Coaxial Carbon Nanotube MOS Field Effect Transistor from non-equilibrium Green's function simulationChe, Yuchi; Tao, Yadong; Liu, Feng; Zhou, Xingye; He, Jin
2012Analog/RF performance analysis of coaxial carbon nanotube MOSFET from non-equilibrium green's function simulationChe, Yuchi; He, Jin; Liang, Hailang; Chen, Qin; Wang, Cheng; He, Hongyu; Cao, Yu
2013Analysis and Modeling of Geometry Dependent Thermal Resistance in Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect TransistorsZhou, Xingye; Inoue, Takuya; Kitamura, Masashi; Matsuura, Kai; Miyake, Masataka; Iizuka, Takahiro; Umeda, Takuya; Kikuchihara, Hideyuki; Mattausch, Hans Juergen; He, Jin; Miura-Mattausch, Mitiko
2013Analysis and modeling of geometry dependent thermal resistance in silicon-on-insulator metal-oxide-semiconductor field-effect transistorsZhou, Xingye; Inoue, Takuya; Kitamura, Masashi; Matsuura, Kai; Miyake, Masataka; Iizuka, Takahiro; Umeda, Takuya; Kikuchihara, Hideyuki; Mattausch, Hans Juergen; He, Jin; Miura-Mattausch, Mitiko
2007Analytic carrier-based charge and capacitance model for long-channel undoped surrounding-gate MOSFETsHe, Jin; Bian, Wei; Tao, Yadong; Yang, Shengqi; Tang, Xu
2007Analytic channel potential solution to the undoped surrounding-gate MOSFETsHe, Jin; Tao, Yadong; Liu, Feng; Feng, Jie; Yang, Shengqi
2009An Analytic Model for Ge/Si Core/Shell Nanowire MOSFETs Considering Drift-Diffusion and Ballistic TransportZhang, Lining; He, Jin; Zhang, Jian; Liu, Feng; Fu, Yue; Song, Yan; Zhang, Xing
2008An Analytic Model for Nanowire MOSFETs With Ge/Si Core/Shell StructureZhang, Lining; He, Jin; Zhang, Jian; Liu, Feng; Fu, Yue; Song, Yan; Zhang, Xing
2013Analytic model foramorphous GST OTS in phase change memory cell with hopping transportWang, Wei; Wang, Cheng; Cao, Yu; Wang, Hao; Ye, Yun; He, Jin
2009An Analytic Model of Silicon-based Nanowire Gated Field Effect Transistor Terahertz Signal DetectionSong, Yan; Chen, Yu; Mu, Xuehao; Lou, Haijun; Zhang, Lining; He, Jin
2009An analytic model of silicon-based nanowire gated field effect transistor terahertz signal detectionSong, Yan; Chen, Yu; Mu, Xuehao; Lou, Haijun; Zhang, Lining; He, Jin
2009An Analytic Model of the Silicon-Based Nanowire Schottky Barrier MOSFETZhou, Xingye; Che, Yuchi; Zhang, Lining; He, Jin; Chan, Mansun
2006An analytic model to account for quantum-mechanical effects of MOSFETs using a parabolic potential well approximationHe, Jin; Chan, Mansun; Zhang, Xing; Wang, Yangyuan