Browsing by Author Kang, N.

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Showing results 1 to 18 of 18
Issue DateTitleAuthor(s)
20170-pi phase transition in hybrid superconductor-InSb nanowire quantum dot devicesLi, Sen; Kang, N.; Caroff, P.; Xu, H. Q.
2018Charge transport and electron-hole asymmetry in low-mobility graphene/hexagonal boron nitride heterostructuresLi, Jiayu; Lin, Li; Huang, Guang-Yao; Kang, N.; Zhang, Jincan; Peng, Hailin; Liu, Zhongfan; Xu, H. Q.
2016Coherent Charge Transport in Ballistic InSb Nanowire Josephson JunctionsLi, S.; Kang, N.; Fan, D. X.; Wang, L. B.; Huang, Y. Q.; Caroff, P.; Xu, H. Q.
2019Crossover from Coulomb blockade to ballistic transport in InAs nanowire devicesWang, L. B.; Pan, Dong; Huang, G. Y.; Zhao, Jianhua; Kang, N.; Ku, H. Q.
2019A Force-Engineered Lint Roller for Superclean GrapheneSun, L.; Sun, L.; Wang, K.; Zheng, L.; Deng, B.; Ma, T.; Kang, N.; Xu, H.; Novoselov, K.S.; Peng, H.; Peng, H.; Liu, Z.; Liu, Z.; Lin, L.; Lin, L.; Wang, Z.; Rui, D.; Yu, Z.; Zhang, J.; Zhang, J.; Li, Y.; Li, Y.; Liu, X.; Liu, X.; Jia, K.
2015Formation of long single quantum dots in high quality InSb nanowires grown by molecular beam epitaxyFan, Dingxun; Li, Sen; Kang, N.; Caroff, Philippe; Wang, L. B.; Huang, Y. Q.; Deng, M. T.; Yu, C. L.; Xu, H. Q.
2016Free-Standing Two-Dimensional Single-Crystalline InSb NanosheetsPan, D.; Fan, D. X.; Kang, N.; Zhi, J. H.; Yu, X. Z.; Xu, H. Q.; Zhao, J. H.
2014Gate tunable nonlinear rectification effects in three-terminal graphene nanojunctionsZhu, R. J.; Huang, Y. Q.; Kang, N.; Xu, H. Q.
2019Magnetotransport properties of graphene layers decorated with colloid quantum dotsZhu, R.-J.; Zhu, R.-J.; Huang, Y.-Q.; Li, J.-Y.; Kang, N.; Xu, H.-Q.; Xu, H.-Q.; Xu, H.-Q.
2014One-dimensional electronic transport at the organic charge-transfer interfaces under high pressuresKang, N.; Auban-Senzier, P.; Li, C.; Poulard, C.; Pasquier, C. R.
2015Phase-coherent transport and spin relaxation in InAs nanowires grown by molecule beam epitaxyWang, L.B.; Guo, J.K.; Kang, N.; Pan, Dong; Li, Sen; Fan, Dingxun; Zhao, Jianhua; Xu, H.Q.
2013Photoelectrical response of hybrid graphene-PbS quantum dot devicesHuang, Y. Q.; Zhu, R. J.; Kang, N.; Du, J.; Xu, H. Q.
2016Probe of local impurity states by bend resistance measurements in graphene cross junctionsDu, J.; Li, J. Y.; Kang, N.; Lin, Li; Peng, Hailin; Liu, Zhongfan; Xu, H. Q.
15-Aug-2020Realization and transport investigation of a single layer-twisted bilayer graphene junctionRui, Dingran; Sun, Luzhao; Kang, N.; Li, Jiayu; Lin, Li; Peng, Hailin; Liu, Zhongfan; Xu, H. Q.
2016Schottky barrier and contact resistance of InSb nanowire field-effect transistorsFan, Dingxun; Kang, N.; Ghalamestani, Sepideh Gorji; Dick, Kimberly A.; Xu, H. Q.
1-Apr-2020Superconductivity in an Al-twisted bilayer graphene-Al junction deviceRui, Dingran; Sun, Luzhao; Kang, N.; Peng, Hailin; Liu, Zhongfan; Xu, H. Q.
5-Feb-2020Transport signatures of relativistic quantum scars in a graphene cavityZhang, G. Q.; Chen, Xianzhang; Lin, Li; Peng, Hailin; Liu, Zhongfan; Huang, Liang; Kang, N.; Xu, H. Q.
2019Ultrafast growth of nanocrystalline graphene films by quenching and grain-size-dependent strength and bandgap openingZhao, T.; Zhao, T.; Sun, D.-M.; Cheng, H.-M.; Cheng, H.-M.; Cheng, H.-M.; Ren, W.; Ren, W.; Xu, C.; Ma, W.; Ma, W.; Liu, Z.; Zhou, T.; Zhou, T.; Liu, Z.; Feng, S.; Zhu, M.; Kang, N.