Showing results 1 to 20 of 174
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| Issue Date | Title | Author(s) |
| 2015 | A 0.8V CMOS bandgap voltage reference design | Zhang, Bolun; Cui, Xiaole; Zhang, Yifan; Yang, Chun; Xiao, Ying; Lin, Xinnan |
| 2015 | A 250MHz Programmable Gain Amplifier for low power UWB receivers | Li, Binbin; Cui, Xiaole; Wang, Hao; Xiao, Ying; Lin, Xinnan |
| 2014 | 3-D Resistance Model for Phase-Change Memory Cell | Chen, Yihan; Kwong, Kit Chu; Lin, Xinnan; Song, Zhitang; Chan, Mansun |
| 2007 | 3-Dimensional integration for interconnect reduction in for nano-CMOS technologies | Chan, Mansun; Zhang, Shengdong; Lin, Xinnan; Wu, Xusheng; Chan, Philip C.-H. |
| 1-Aug-2021 | Abnormal threshold voltage shifts in p-channel low temperature polycrystalline silicon TFTs under deep UV irradiation | Cheng, Hong; Lin, Xinnan |
| 2015 | Accurate Description of Temperature Accelerated NBTI Effect Using the Universal Prediction Model | Sun, Fu; Ma, Chenyue; Lin, Xinnan |
| 2015 | Accurate description of temperature accelerated NBTI effect using the universal prediction model | Sun, Fu; Ma, Chenyue; Lin, Xinnan |
| Jul-2021 | Achieving complementary resistive switching and multi-bit storage goals by modulating the dual-ion reaction through supercritical fluid-assisted ammoniation | Li, Lei; Dai, Tianjiao; Liu, Kai; Chang, Kuan-Chang; Zhang, Rui; Lin, Xinnan; Liu, Heng-Jui; Lai, Ying-Chih; Kuo, Tzu-Peng |
| 2016 | An Algorithm of Training Sample Selection for Integrated Circuit Device Modeling Based on Artificial Neural Networks | Zhang, Zhiyuan; Cui, Xiaole; Lin, Xinnan; Zhang, Lining |
| 1-Aug-2022 | All-HKMG-bounded SCR for advanced ESD protection in 14 nm FinFET technology | Du, Feibo; Xie, Tiantian; Wang, Jun; Chang, Kuan-Chang; Lin, Xinnan; Hou, Fei; Chen, Ruibo; Han, Aoran; Liu, Zhiwei |
| 2016 | Analysis of 1/f Noise for Polycrystalline Silicon TFTs Considering Mobility Power-Law Parameter | He, Hongyu; Liu, Yuan; Wang, Hao; Lin, Xinnan; Zheng, Xueren; Zhang, Shengdong |
| 2010 | Analytic modeling of BioFET as a pH sensor | Song, Yuanyuan; Guan, Yan; Zhang, Jian; He, Jin; Zhang, Xing; Lin, Xinnan |
| 2012 | An Analytical Charge Model for Double-Gate Tunnel FETs | Zhang, Lining; Lin, Xinnan; He, Jin; Chan, Mansun |
| 2016 | Analytical Current Model for Long-Channel Junctionless Double-Gate MOSFETs | Lin, Xinnan; Zhang, Baili; Xiao, Ying; Lou, Haijun; Zhang, Lining; Chan, Mansun |
| 2020 | Analytical Drain Current and Capacitance Model for Amorphous InGaZnO TFTs Considering Temperature Characteristics | He, Hongyu; Xiong, Chao; Yin, Junli; Wang, Xinlin; Lin, Xinnan; Zhang, Shengdong |
| 2017 | Analytical Drain Current Model for Amorphous InGaZnO Thin-Film Transistors at Different Temperatures Considering Both Deep and Tail Trap States | He, Hongyu; Liu, Yuan; Yan, Binghui; Lin, Xinnan; Zheng, Xueren; Zhang, Shengdong |
| 2016 | Analytical Drain Current Model for Organic Thin-Film Transistors at Different Temperatures Considering Both Deep and Tail Trap States | He, Hongyu; Liu, Yuan; Yan, Binghui; Lin, Xinnan; Zheng, Xueren; Zhang, Shengdong |
| 2014 | Analytical model of the subthreshold behavior in short-channel junctionless cylindrical surrounding-gate mosfets | Zhang, Baili; Lou, Haijun; Li, Dan; Lin, Xinnan; Chan, Mansun |
| 2010 | Analytical solution of subthreshold channel potential of gate underlap cylindrical gate-all-around MOSFET | Zhang, Lining; Ma, Chenyue; He, Jin; Lin, Xinnan; Chan, Mansun |
| 2010 | Asymmetric issues of FinFET device after hot carrier injection and impact on digital and analog circuits | Ma, Chenyue; Wang, Hao; Zhang, Xiufang; He, Frank; He, Yadong; Zhang, Xing; Lin, Xinnan |
