Browsing by Author Qin, Zhixin

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Issue DateTitleAuthor(s)
2013282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substratesDong, Peng; Yan, Jianchang; Wang, Junxi; Zhang, Yun; Geng, Chong; Wei, Tongbo; Cong, Peipei; Zhang, Yiyun; Zeng, Jianping; Tian, Yingdong; Sun, Lili; Yan, Qingfeng; Li, Jinmin; Fan, Shunfei; Qin, Zhixin
2014AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiencyDong, Peng; Yan, Jianchang; Zhang, Yun; Wang, Junxi; Zeng, Jianping; Geng, Chong; Cong, Peipei; Sun, Lili; Wei, Tongbo; Zhao, Lixia; Yan, Qingfeng; He, Chenguang; Qin, Zhixin; Li, Jinmin
28-Sep-2020Cathodoluminescence nano-characterization of individual GaN/AlN quantum disks embedded in nanowiresSheng, Bowen; Bertram, Frank; Schmidt, Gordon; Veit, Peter; Mueller, Marcus; Wang, Ping; Sun, Xiaoxiao; Qin, Zhixin; Shen, Bo; Wang, Xinqiang; Christen, Juergen
2007Cathodoluminescence study of InGaN MQW laser diodes using laser lift-off techniqueLi, Rui; Chen, Weihua; Kang, Xiangning; Xu, Ke; Xu, Jun; Yang, Zhijian; Nie, Ruijuan; Yu, Tongjun; Chen, Zhizhong; Qin, Zhixin; Zhang, Guoyi; Gan, Zizhao; Hu, Xiaodong
2012Changing oblique angles of pyramid facets fabricated by wet etching of N polar GaNYu, Feng; Chen, Zhizhong; Qi, Shengli; Wang, Suyuan; Jiang, Shuang; Fu, Xingxing; Jiang, Xianzhe; Yu, Tongjun; Qin, Zhixin; Kang, Xiangning; Wu, Jiejun; Zhang, Guoyi
19-Apr-2021Control of dislocations in heteroepitaxial AlN films by extrinsic supersaturated vacancies introduced through thermal desorption of heteroatomsWang, Jiaming; Xu, Fujun; Liu, Baiyin; Lang, Jing; Zhang, Na; Kang, Xiangning; Qin, Zhixin; Yang, Xuelin; Wang, Xinqiang; Ge, Weikun; Shen, Bo
Mar-2022Correlation between electrical properties and growth dynamics for Si-doped Al-rich AlGaN grown by metal-organic chemical vapor depositionLiu, Baiyin; Xu, Fujun; Wang, Jiaming; Lang, Jing; Wang, Liubing; Fang, Xuzhou; Yang, Xuelin; Kang, Xiangning; Wang, Xinqiang; Qin, Zhixin; Ge, Weikun; Shen, Bo
2019Deep Ultraviolet Light Source from Ultrathin GaN/AlN MQW Structures with Output Power Over 2 WattWang, Yixin; Rong, Xin; Ivanov, Sergey; Jmerik, Valentin; Chen, Zhaoying; Wang, Hui; Wang, Tao; Wang, Ping; Jin, Peng; Chen, Yanan; Kozlovsky, Vladimir; Sviridov, Dmitry E.; Zverev, Michail; Zhdanova, Elena; Gamov, Nikita; Studenov, Valentin; Miyake, Hideto; Li, Hongwei; Guo, Shiping; Yang, Xuelin; Xu, Fujun; Yu, Tongjun; Qin, Zhixin; Ge, Weikun; Shen, Bo; Wang, Xinqiang
2009Different degradation behaviors of InGaN/GaN MQWs blue and violet LEDsHuang, Liubing; Yu, Tongjun; Chen, Zhizhong; Qin, Zhixin; Yang, Zhijian; Zhang, Guoyi
2009Different degradation behaviors of InGaN/GaN MQWs blue and violet LEDsHuang, Liubing; Yu, Tongjun; Chen, Zhizhong; Qin, Zhixin; Yang, Zhijian; Zhang, Guoyi
2008Effect of AlN interlayer thickness on leakage currents in Schottky contacts to Al(0.25)Ga(0.75)N/AlN/GaN heterostructuresHuang, Sen; Shen, Bo; Xu, Fujun; Lin, Fang; Miao, Zhenlin; Song, Jie; Lu, Lin; Qin, Zhixin; Yang, Zhijian; Zhang, Guoyi
2008Effect of AlN interlayer thickness on leakage currents in Schottky contacts to Alo.25Gao.75N/AlN/GaN heterostructuresHuang, Sen; Shen, Bo; Xu, Fujun; Lin, Fang; Miao, Zhenlin; Song, Jie; Lu, Lin; Qin, Zhixin; Yang, Zhijian; Zhang, Guoyi
2014Effect of injection current on the optical polarization of AlGaN-based ultraviolet light-emitting diodesHou, Mengjun; Qin, Zhixin; He, Chenguang; Cai, Jun'an; Wang, Xinqiang; Shen, Bo
2016Effect of stress on the Al composition evolution in AlGaN grown using metal organic vapor phase epitaxyHe, Chenguang; Qin, Zhixin; Xu, Fujun; Zhang, Lisheng; Wang, Jiaming; Hou, Mengjun; Zhang, Shan; Wang, Xinqiang; Ge, Weikun; Shen, Bo
2006Effects of annealing on the properties of the Mg-ion implanted p-GaN layerLuo, Haojun; Hu, Chengyu; Yao, Shude; Qin, Zhixin
2016Effects of fluorine-based plasma treatment and thermal annealing on high-Al content AlGaN Schottky contactLiu, Fang; Qin, Zhixin
2007Elastic-plastic mechanical properties of AlxGa1-xN thin films with high Al compositionXu, Fujun; Shen, Bo; Wang, Maojun; Xu, Jian; Miao, Zhenlin; Yang, Zhijian; Qin, Zhixin; Zhang, Guoyi; Lin, Bing; Bai, Shulin
2017Exciton emission of quasi-2D InGaN in GaN matrix grown by molecular beam epitaxyMa, Dingyu; Rong, Xin; Zheng, Xiantong; Wang, Weiying; Wang, Ping; Schulz, Tobias; Albrecht, Martin; Metzner, Sebastian; Mueller, Mathias; August, Olga; Bertram, Frank; Christen, Juergen; Jin, Peng; Li, Mo; Zhang, Jian; Yang, Xuelin; Xu, Fujun; Qin, Zhixin; Ge, Weikun; Shen, Bo; Wang, Xinqiang
2017Excitonic localization at macrostep edges in AlGaN/AlGaN multiple quantum wellsHou, Mengjun; Qin, Zhixin; Zhang, Lisheng; Han, Tianyang; Wang, Mingxing; Xu, Fujun; Wang, Xinqiang; Yu, Tongjun; Fang, Zheyu; Shen, Bo
2019Experimental Evidence of Large Bandgap Energy in Atomically Thin AlNWang, Ping; Wang, Tao; Wang, Hui; Sun, Xiaoxiao; Huang, Pu; Sheng, Bowen; Rong, Xin; Zheng, Xiantong; Chen, Zhaoying; Wang, Yixin; Wang, Ding; Liu, Huapeng; Liu, Fang; Yang, Liuyun; Li, Duo; Chen, Ling; Yang, Xuelin; Xu, Fujun; Qin, Zhixin; Shi, Junjie; Yu, Tongjun; Ge, Weikun; Shen, Bo; Wang, Xinqiang