Showing results 1 to 20 of 368
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| Issue Date | Title | Author(s) |
| 2014 | 2.6 mu m MBE grown InGaAs detectors with dark current of SRH and TAT | Ji, Xiaoli; Liu, Baiqing; Tang, Hengjing; Yang, Xuelin; Li, Xue; Gong, HaiMei; Shen, Bo; Han, Ping; Yan, Feng |
| Feb-2023 | 600-V p-GaN Gate HEMT With Buried Hole Spreading Channel Demonstrating Immunity Against Buffer Trapping Effects | Yang, Junjie; Wei, Jin; Wu, Yanlin; Nuo, Muqin; Chen, Zhenghao; Yang, Xuelin; Wang, Maojun; Shen, Bo |
| Feb-2023 | 600-V p-GaN Gate HEMT With Buried Hole Spreading Channel Demonstrating Immunity Against Buffer Trapping Effects | Yang, Junjie; Wei, Jin; Wu, Yanlin; Nuo, Muqin; Chen, Zhenghao; Yang, Xuelin; Wang, Maojun; Shen, Bo |
| Oct-2023 | 650-V E-Mode p-GaN Gate HEMT With Schottky Source Extension Towards Enhanced Short-Circuit Reliability | Yu, Jingjing; Wei, Jin; Wang, Maojun; Yang, Junjie; Wu, Yanlin; Cui, Jiawei; Li, Teng; Wang, Jinyan; Shen, Bo |
| 2014 | 900 V/1.6 m Omega . cm(2) Normally Off Al2O3/GaN MOSFET on Silicon Substrate | Wang, Maojun; Wang, Ye; Zhang, Chuan; Xie, Bing; Wen, Cheng P.; Wang, Jinyan; Hao, Yilong; Wu, Wengang; Chen, Kevin J.; Shen, Bo |
| 2009 | Abnormal Shubnikov-de Haas oscillations of the two-dimensional electron gas in AlxGa1-xN/GaN heterostructures in tilted magnetic fields | Tang, Ning; Shen, Bo; Han, Kui; Lu, Fang-Chao; Qin, Zhi-Xin; Zhang, Guo-Yi |
| 8-Jun-2020 | Al diffusion at AlN/Si interface and its suppression through substrate nitridation | Wei, Lai; Yang, Xuelin; Shen, Jianfei; Liu, Danshuo; Cai, Zidong; Ma, Cheng; He, Xiaoguang; Tang, Jun; Qi, Shengli; Xu, Fujun; Wang, Xinqiang; Ge, Weikun; Shen, Bo |
| 2023 | AlN/GaN HEMTs with f(max) Exceeding 300 GHz by Using Ge-Doped n(++) GaN Ohmic Contacts | Yang, Liuyun; Huang, Wei; Wang, Ding; Zhang, Baoqing; Zhang, Yibin; Zhang, Junyun; Chen, Tangsheng; Ge, Weikun; Wu, Shaobing; Shen, Bo; Wang, Xinqiang |
| Dec-2022 | alpha-opic flux models based on the five fundus photoreceptors for prediction of light-induced melatonin suppression | Nie, Jingxin; Chen, Zhizhong; Jiao, Fei; Chen, Yiyong; Pan, Zuojian; Deng, Chuhan; Zhang, Haodong; Dong, Boyan; Xi, Xin; Kang, Xiangning; Wang, Qi; Dang, Weimin; Dong, Wentian; Zhou, Tianhang; Zhou, Shuzhe; Yu, Xin; Tong, Yuzhen; Zhang, Guoyi; Shen, Bo |
| Nov-2021 | Altered brain network functional connectivity patterns in patients with vestibular migraine diagnosed according to the diagnostic criteria of the Barany Society and the International Headache Society | Li, Zhe-Yuan; Si, Li-Hong; Shen, Bo; Yang, Xu |
| Dec-2022 | Altered functional activity in the right superior temporal gyrus in patients with definite vestibular migraine | Li, Zhe-Yuan; Si, Li-Hong; Shen, Bo; Ling, Xia; Yang, Xu |
| 2020 | Altered intra- and inter-network functional connectivity in patients with persistent postural-perceptual dizziness | Li, Kangzhi; Si, Lihong; Cui, Bin; Ling, Xia; Shen, Bo; Yang, Xu |
| Dec-2021 | Altered Resting-State Intranetwork and Internetwork Functional Connectivity in Patients With Chronic Unilateral Vestibulopathy | Si, Lihong; Cui, Bin; Li, Zheyuan; Li, Xiang; Li, Kangzhi; Ling, Xia; Shen, Bo; Yang, Xu |
| Dec-2020 | Altered spontaneous functional activity of the right precuneus and cuneus in patients with persistent postural-perceptual dizziness | Li, Kangzhi; Si, Lihong; Cui, Bin; Ling, Xia; Shen, Bo; Yang, Xu |
| Feb-2024 | Analysis of Drain-Dependent Threshold Voltage and False Turn-On of Schottky-Type p-GaN Gate HEMT in Bridge-Leg Circuit | Fan, Zetao; Wang, Maojun; Wei, Jin; Nuo, Muqin; Zhou, Jin; Zhang, Jiaxin; Hao, Yilong; Shen, Bo |
| 1-Nov-2024 | Analysis of On-Resistance in 650-V Enhancement-Mode Active-Passivation p-GaN Gate HEMT | Wu, Yanlin; Yang, Junjie; Yu, Jingjing; Chang, Hao; Yang, Xuelin; Wang, Jinyan; Hao, Yilong; Shen, Bo; Zhou, David; Wang, Maojun; Wei, Jin |
| 2010 | Analysis on the new mechanisms of low resistance stacked Ti/Al Ohmic contact structure on AlGaN/GaN HEMTs | Gong, Rumin; Wang, Jinyan; Dong, Zhihua; Liu, Shenghou; Yu, Min; Wen, Cheng P.; Hao, Yilong; Shen, Bo; Cai, Yong; Zhang, Baoshun; Zhang, Jincheng |
| 2016 | Angular distribution of polarized light and its effect on light extraction efficiency in AlGaN deep-ultraviolet light-emitting diodes | Chen, Xinjuan; Ji, Cheng; Xiang, Yong; Kang, Xiangning; Shen, Bo; Yu, Tongjun |
| 2017 | Anisotropic strain relaxation and high quality AlGaN/GaN heterostructures on Si (110) substrates | Feng, Yuxia; Yang, Xuelin; Cheng, Jianpeng; Zhang, Jie; Ji, Panfeng; Shen, Jianfei; Hu, Anqi; Xu, Fujun; Yu, Tongjun; Wang, Xinqiang; Shen, Bo |
| 2017 | Anomalous surface potential behavior observed in InN by photo-assisted Kelvin probe force microscopy | Sun, Xiaoxiao; Wei, Jiandong; Wang, Xinqiang; Wang, Ping; Li, Shunfeng; Waag, Andreas; Li, Mo; Zhang, Jian; Ge, Weikun; Shen, Bo |
