| Issue Date | Title | Author(s) |
| 2009 | 33 mu m free standing thick film vertical structure LED made by laser lift-off | Sun, Yongjian; Qi, Shengli; Chen, Zhizhong; Kang, Xingning; Zhu, Guangmin; Chen, Cheng; Li, Shitao; Pan, Yaobo; Yan, Jianfeng; Deng, Junjing; Long, Hao; Hao, Maosheng; Yu, Tongjun; Zhang, Guoyi |
| 2009 | 33 ��m free standing thick film vertical structure LED made by laser lift-off | Sun, Yongjian; Qi, Shengli; Chen, Zhizhong; Kang, Xingning; Zhu, Guangmin; Chen, Cheng; Li, Shitao; Pan, Yaobo; Yan, Jianfeng; Deng, Junjing; Long, Hao; Hao, Maosheng; Yu, Tongjun; Zhang, Guoyi |
| 2015 | Adipose differentiation-related protein is not involved in hypoxia inducible factor-1-induced lipid accumulation under hypoxia | Shen, Guomin; Ning, Ning; Zhao, Xingsheng; Liu, Xi; Wang, Guangyu; Wang, Tianzhen; Zhao, Ran; Yang, Chao; Wang, Dongmei; Gong, Pingyuan; Shen, Yan; Sun, Yongjian; Zhao, Xiao; Jin, Yinji; Yang, Weiwei; He, Yan; Zhang, Lei; Jin, Xiaoming; Li, Xiaobo |
| 2016 | Fabrication, characterization and applications of flexible vertical InGaN micro-light emitting diode arrays | Tian, Pengfei; McKendry, Jonathan J. D.; Gu, Erdan; Chen, Zhizhong; Sun, Yongjian; Zhang, Guoyi; Dawson, Martin D.; Liu, Ran |
| 2011 | Flexible vertical structure GaN-based light emitting diodes on an AuSn substrate | Tian, Pengfei; Xie, Enyuan; Gong, Zheng; Chen, Zhizhong; Yu, Tongjun; Sun, Yongjian; Qi, Shengli; Chen, Yujie; Zhang, Yanfeng; Calvez, Stephane; Gu, Erdan; Zhang, Guoyi; Dawson, Martin D. |
| 2011 | GaN-based LEDs with a high light extraction composite surface structure fabricated by a modified YAG laser lift-off technology and the patterned sapphire substrates | Sun, Yongjian; Trieu, Simeon; Yu, Tongjun; Chen, Zhizhong; Qi, Shengli; Tian, Pengfei; Deng, Junjing; Jin, Xiaoming; Zhang, Guoyi |
| 2015 | Gelating and Drying Process of Aqueous Gelcasting Aluminum Nitride Ceramics | Guo, Jian; Sun, Yongjian; Yang, Haiyan; Qiu, Tai; Xue, Wang |
| 2009 | Microanalyses of the reverse-bias leakage current increase in the laser lift off GaN-based light emitting diodes | Sun, Yongjian; Yu, Tongjun; Zhao, Huabo; Shan, Xudong; Zhang, Xinzheng; Chen, Zhizhong; Kang, Xiangning; Yu, Dapeng; Zhang, Guoyi |
| 2014 | Nucleation mechanism of GaN growth on wet etched pattern sapphire substrates | Sun, Yongjian; Yu, Tongjun; Dai, Jinhong; Wang, Nonghua; Luo, Ruihong; Liang, Zhiwen; Zhang, Neng; Li, Chengyang; Kang, Xiangning; Zhang, Guoyi |
| 2013 | Performance improvement of GaN-based LEDs with step stage InGaN/GaN strain relief layers in GaN-based blue LEDs | Jia, Chuanyu; Yu, Tongjun; Lu, Huimin; Zhong, Cantao; Sun, Yongjian; Tong, Yuzhen; Zhang, Guoyi |
| 2010 | Phase distribution in eutectic AuSn layer changed by temperature ramping rate and its effect on the performance of GaN-based vertical structure LEDs | Tian, Pengfei; Chen, Zhizhong; Sun, Yongjian; Qi, Shengli; Zhang, Huizhen; Deng, Junjing; Yu, Feng; Yu, Tongjun; Kang, Xiangning; Qin, Zhixin; Zhang, Guoyi |
| 2008 | Properties of GaN-based light-emitting diode thin film chips fabricated by laser lift-off and transferred to Cu | Sun, Yongjian; Yu, Tongjun; Chen, Zhizhong; Kang, Xiangning; Qi, Shengli; Li, Minggang; Lian, Guijun; Huang, Sen; Xie, Rongsi; Zhang, Guoyi |
