| Issue Date | Title | Author(s) |
| 2014 | Anomalous temperature-dependent photoluminescence peak energy in InAlN alloys | Li, Wei; Jin, Peng; Wang, Weiying; Mao, Defeng; Liu, Guipeng; Wang, Zhanguo; Wang, Jiaming; Xu, Fujun; Shen, Bo |
| Feb-2021 | Compressive strain induced enhancement of transverse-electric polarized ultraviolet light emission for AlGaN quantum wells | Zhang, Shixiong; Zhang, Yunfan; Tang, Ning; Wang, Weiying; Chen, Xinjuan; Fu, Lei; He, Chenguang; Lv, Yuanjie; Feng, Zhihong; Xu, Fujun; Yu, Tongjun; Ge, Weikun; Shen, Bo |
| 2016 | Enhancement of optical polarization degree of AlGaN quantum wells by using staggered structure | Wang, Weiying; Lu, Huimin; Fu, Lei; He, Chenguang; Wang, Mingxing; Tang, Ning; Xu, Fujun; Yu, Tongjun; Ge, Weikun; Shen, Bo |
| 2014 | Evidence of Type-II Band Alignment in III-nitride Semiconductors: Experimental and theoretical investigation for In0.17Al0.83N/GaN heterostructures | Wang, Jiaming; Xu, Fujun; Zhang, Xia; An, Wei; Li, Xin-Zheng; Song, Jie; Ge, Weikun; Tian, Guangshan; Lu, Jing; Wang, Xinqiang; Tang, Ning; Yang, Zhijian; Li, Wei; Wang, Weiying; Jin, Peng; Chen, Yonghai; Shen, Bo |
| 2017 | Exciton emission of quasi-2D InGaN in GaN matrix grown by molecular beam epitaxy | Ma, Dingyu; Rong, Xin; Zheng, Xiantong; Wang, Weiying; Wang, Ping; Schulz, Tobias; Albrecht, Martin; Metzner, Sebastian; Mueller, Mathias; August, Olga; Bertram, Frank; Christen, Juergen; Jin, Peng; Li, Mo; Zhang, Jian; Yang, Xuelin; Xu, Fujun; Qin, Zhixin; Ge, Weikun; Shen, Bo; Wang, Xinqiang |
| 2016 | High-Output-Power Ultraviolet Light Source from Quasi-2D GaN Quantum Structure | Rong, Xin; Wang, Xinqiang; Ivanov, Sergey V.; Jiang, Xinhe; Chen, Guang; Wang, Ping; Wang, Weiying; He, Chenguang; Wang, Tao; Schulz, Tobias; Albrecht, Martin; Jmerik, Valentin N.; Toropov, Alexey A.; Ratnikov, Viacheslav V.; Kozlovsky, Vladimir I.; Martovitsky, Victor P.; Jin, Peng; Xu, Fujun; Yang, Xuelin; Qin, Zhixin; Ge, Weikun; Shi, Junjie; Shen, Bo |
| 2012 | Indium Compositional Homogeneity in In0.17Al0.83N Epilayers Grown by Metal Organic Chemical Vapor Deposition | Wang, Jiaming; Xu, Fujun; Huang, Chengcheng; Xu, Zhengyu; Zhang, Xia; Wang, Yan; Ge, Weikun; Wang, Xinqiang; Yang, Zhijian; Shen, Bo; Li, Wei; Wang, Weiying; Jin, Peng |
| 2017 | K-Lambda crossover transition in the conduction band of monolayer MoS2 under hydrostatic pressure | Fu, Lei; Wan, Yi; Tang, Ning; Ding, Yi-min; Gao, Jing; Yu, Jiachen; Guan, Hongming; Zhang, Kun; Wang, Weiying; Zhang, Caifeng; Shi, Jun-jie; Wu, Xiang; Shi, Su-Fei; Ge, Weikun; Dai, Lun; Shen, Bo |
| 2013 | Optical investigation of strong exciton localization in high Al composition AlxGa1-xN alloys | Fan, Shunfei; Qin, Zhixin; He, Chenguang; Hou, Mengjun; Wang, Xinqiang; Shen, Bo; Li, Wei; Wang, Weiying; Mao, Defeng; Jin, Peng; Yan, Jianchang; Dong, Peng |
| 2016 | Transition from bound to free excitons observed in deep- ultraviolet photoluminescence of AlN grown by MOCVD | Wang, Weiying; Jin, Peng; Tang, Ning; Liu, Yali; Fu, Lei; Xu, Fujun; Qin, Zhixin; Ge, Weikun; Shen, Bo |
