Showing results 1 to 20 of 168
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Issue Date | Title | Author(s) |
Aug-2022 | 120 GHz Frequency-Doubler Module Based on GaN Schottky Barrier Diode | Liu, Honghui; Liang, Zhiwen; Meng, Jin; Liu, Yuebo; Wang, Hongyue; Yan, Chaokun; Wu, Zhisheng; Liu, Yang; Zhang, Dehai; Wang, Xinqiang; Zhang, Baijun |
20-Apr-2022 | 2D Graphene-Like Pb-Free Perovskite Semiconductor CsSb(Br1-xIx)(4) with Quasi-linear Electronic Dispersion and Direct Bandgap Close to Germanium | Guo, Wen-hui; Zhong, Hong-xia; Zhang, Min; Du, Juan; Liu, Shi-ming; He, Yong; Zhu, Yao-hui; Wang, Xinqiang; Shi, Jun-jie |
21-Feb-2020 | 3D-Ising critical behavior in antiperovskite-type ferromagneticlike Mn3GaN | Yuan, Ye; Liu, Yu; Xu, Chi; Kang, Junjie; Wang, Weiyun; Wang, Qi; Song, Bo; Zhou, Shengqiang; Wang, Xinqiang |
8-Jun-2020 | Al diffusion at AlN/Si interface and its suppression through substrate nitridation | Wei, Lai; Yang, Xuelin; Shen, Jianfei; Liu, Danshuo; Cai, Zidong; Ma, Cheng; He, Xiaoguang; Tang, Jun; Qi, Shengli; Xu, Fujun; Wang, Xinqiang; Ge, Weikun; Shen, Bo |
6-Apr-2022 | AlGaN/GaN Heterostructure Schottky Barrier Diodes with Graded Barrier Layer | Liu, Honghui; Liang, Zhiwen; Yan, Chaokun; Liu, Yuebo; Wang, Fengge; Xu, Yanyan; Shen, Junyu; Xiao, Zhengwen; Wu, Zhisheng; Liu, Yang; Wang, Qi; Wang, Xinqiang; Zhang, Baijun |
2017 | Anisotropic strain relaxation and high quality AlGaN/GaN heterostructures on Si (110) substrates | Feng, Yuxia; Yang, Xuelin; Cheng, Jianpeng; Zhang, Jie; Ji, Panfeng; Shen, Jianfei; Hu, Anqi; Xu, Fujun; Yu, Tongjun; Wang, Xinqiang; Shen, Bo |
2017 | Anomalous surface potential behavior observed in InN by photo-assisted Kelvin probe force microscopy | Sun, Xiaoxiao; Wei, Jiandong; Wang, Xinqiang; Wang, Ping; Li, Shunfeng; Waag, Andreas; Li, Mo; Zhang, Jian; Ge, Weikun; Shen, Bo |
Sep-2022 | Anti-perovskite carbides Ca6CSe4 and Sr6CSe4 for photovoltaics with similar optoelectronic properties to MAPbI(3) | Guo, Wen-hui; Zhong, Hong-xia; Du, Juan; Zhu, Yao-hui; Liu, Shi-ming; He, Yong; Tian, Chong; Zhang, Min; Wang, Xinqiang; Shi, Jun-jie |
Jun-2022 | Atomic-Scale Investigation of the Lattice-Asymmetry-Driven Anisotropic Sublimation in GaN | Sheng, Shanshan; Wang, Tao; Liu, Shangfeng; Liu, Fang; Sheng, Bowen; Yuan, Ye; Li, Duo; Chen, Zhaoying; Tao, Renchun; Chen, Ling; Zhang, Baoqing; Yang, Jiajia; Wang, Ping; Wang, Ding; Sun, Xiaoxiao; Zhang, Jingmin; Xu, Jun; Ge, Weikun; Shen, Bo; Wang, Xinqiang |
2019 | beta-Ga2O3 thin film grown on sapphire substrate by plasma-assisted molecular beam epitaxy | Wei, Jiaqi; Kim, Kumsong; Liu, Fang; Wang, Ping; Zheng, Xiantong; Chen, Zhaoying; Wang, Ding; Imran, Ali; Rong, Xin; Yang, Xuelin; Xu, Fujun; Yang, Jing; Shen, Bo; Wang, Xinqiang |
21-Sep-2022 | Breaking the Transverse Magnetic-Polarized Light Extraction Bottleneck of Ultraviolet-C Light-Emitting Diodes Using Nanopatterned Substrates and an Inclined Reflector | Luo, Wei; Sadaf, Sharif Md.; Ahmed, Tashfiq; Baten, Md Zunaid; Faruque, Md Omar; Hossain, Md Arif; Wang, Houjin; Li, Yongde; Yuan, Ye; Wang, Weiyun; Liu, Shangfeng; Li, Tai; Wang, Qi; Kang, Junjie; Wang, Xinqiang |
2011 | Broadband terahertz emission based on the femtosecond laser pulses | Zhao, Guozhong; Wang, Haiyan; Wang, Xinqiang |
24-Oct-2022 | Carbon doped semi-insulating freestanding GaN crystals by ethylene | Liu, Qiang; Zajac, Marcin; Iwinska, Malgorzata; Wang, Shuai; Zhuang, Wenrong; Bockowski, Michal; Wang, Xinqiang |
2009 | Carrier recombination processes in In-polar n-InN in regions of low residual electron density | Ishitani, Yoshihiro; Kato, Kenta; Ogiwara, Hitoshi; Che, Song-Bek; Yoshikawa, Akihiko; Wang, Xinqiang |
28-Sep-2020 | Cathodoluminescence nano-characterization of individual GaN/AlN quantum disks embedded in nanowires | Sheng, Bowen; Bertram, Frank; Schmidt, Gordon; Veit, Peter; Mueller, Marcus; Wang, Ping; Sun, Xiaoxiao; Qin, Zhixin; Shen, Bo; Wang, Xinqiang; Christen, Juergen |
Nov-2022 | Cathodoluminescence Spectroscopy in Graded InxGa1-xN | Zhao, Xiaofang; Wang, Tao; Sheng, Bowen; Zheng, Xiantong; Chen, Li; Liu, Haihui; He, Chao; Xu, Jun; Zhu, Rui; Wang, Xinqiang |
Nov-2020 | Color-Tunable 3D InGaN/GaN Multi-Quantum-Well Light-Emitting-Diode Based on Microfacet Emission and Programmable Driving Power Supply | Wang, Lai; Wang, Xun; Bertram, Frank; Sheng, Bowen; Hao, Zhibiao; Luo, Yi; Sun, Changzheng; Xiong, Bing; Han, Yanjun; Wang, Jian; Li, Hongtao; Schmidt, Gordon; Veit, Peter; Christen, Jurgen; Wang, Xinqiang |
1-Feb-2020 | Conductive transparent (InGa)(2)O-3 film as host for rare earth Eu | Zhang, Fabi; Saito, Katsuhiko; Tanaka, Tooru; Wang, Xinqiang; Guo, Qixin |
Oct-2022 | Continuous epitaxy of single-crystal graphite films by isothermal carbon diffusion through nickel | Zhang, Zhibin; Ding, Mingchao; Cheng, Ting; Qiao, Ruixi; Zhao, Mengze; Luo, Mingyan; Wang, Enze; Sun, Yufei; Zhang, Shuai; Li, Xingguang; Zhang, Zhihong; Mao, Hancheng; Liu, Fang; Fu, Ying; Liu, Kehai; Zou, Dingxin; Liu, Can; Wu, Muhong; Fan, Chuanlin; Zhu, Qingshan; Wang, Xinqiang; Gao, Peng; Li, Qunyang; Liu, Kai; Zhang, Yuanbo; Bai, Xuedong; Yu, Dapeng; Ding, Feng; Wang, Enge; Liu, Kaihui |
19-Apr-2021 | Control of dislocations in heteroepitaxial AlN films by extrinsic supersaturated vacancies introduced through thermal desorption of heteroatoms | Wang, Jiaming; Xu, Fujun; Liu, Baiyin; Lang, Jing; Zhang, Na; Kang, Xiangning; Qin, Zhixin; Yang, Xuelin; Wang, Xinqiang; Ge, Weikun; Shen, Bo |