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Issue Date | Title | Author(s) |
2007 | A 0.4-V low noise amplifier using forward body bias technology for 5 GHz application | Wu, Dake; Huang, Ru; Wong, Waisum; Wang, Yangyuan |
2010 | An 11-bit and 39 ps resolution time-to-digital converter for ADPLL in digital television | Liu, Wei; Li, Wei; Ren, P.; Lin, C. L.; Zhang, Shengdong; Wang, Yangyuan |
Nov-2021 | A 148-nW Reconfigurable Event-Driven Intelligent Wake-Up System for AIoT Nodes Using an Asynchronous Pulse-Based Feature Extractor and a Convolutional Neural Network | Wang, Zhixuan; Liu, Ying; Zhou, Peng; Tan, Zhichao; Fan, Haitao; Zhang, Yihan; Shen, Linxiao; Ru, Jiayoon; Wang, Yangyuan; Ye, Le; Huang, Ru |
2021 | A 148nW General-Purpose Event-Driven Intelligent Wake-Up Chip for AIoT Devices Using Asynchronous Spike-Based Feature Extractor and Convolutional Neural Network | Wang, Zhixuan; Ye, Le; Liu, Ying; Zhou, Peng; Tan, Zhichao; Fan, Haitao; Zhangl, Yihan; Ru, Jiayoon; Wang, Yangyuan; Huang, Ru |
2004 | A 2.4 GHz fully integrated CMOS LC VCO | Shi, Hao; Zhang, Guoyan; Wang, Yangyuan |
2020 | 20.2 A 57nW Software-Defined Always-On Wake-Up Chip for IoT Devices with Asynchronous Pipelined Event-Driven Architecture and Time-Shielding Level-Crossing ADC | Wang, Zhixuan; Ye, Le; Zhang, Hao; Ru, Jiayoon; Fan, Haitao; Wang, Yangyuan; Huang, Ru |
2006 | 3D nanohelix fabrication and 3D nanometer assembly by focused ion beam stress-introducing technique | Xia, Ling; Wu, Wengang; Xu, Jun; Hao, Yilong; Wang, Yangyuan |
2004 | 3D simulation of profile evolution in silicon DRIE | Zhou, Rongchun; Zhang, Haixia; Hao, Yilong; Wang, Yangyuan |
2014 | A 4.2mm(2) 72 mW Multistandard Direct-Conversion DTV Tuner in 65 nm CMOS | Chen, Long; Wang, Yixiao; Wang, Chuan; Wang, Jiayi; Shi, Congyin; Weng, Xuankai; Ye, Le; Liu, Junhua; Liao, Huailin; Wang, Yangyuan |
2008 | A 900MHz UHF RFID Reader Transceiver in 0.18 mu m CMOS Technology | Ye, Le; Liao, Huailin; Song, Fei; Chen, Jiang; Xiao, Huilin; Liu, Ruiqiang; Liu, Junhua; Wang, Xinan; Wang, Yangyuan |
2008 | A 900MHz UHF RFID reader transceiver in 0.18m CMOS technology | Ye, Le; Liao, Huailin; Song, Fei; Chen, Jiang; Xiao, Huilin; Liu, Ruiqiang; Liu, Junhua; Wang, Xinan; Wang, Yangyuan |
2004 | Abnormal off-state leakage current increasing with reduced silicon body thickness in nano-SOI devices | Wang, Wenping; Huang, Ru; Zhang, Guoyan; Yang, Shengqi; Wang, Yangyuan |
2007 | Analog/RF performance of Si nanowire MOSFETs and the impact of process variation | Wang, Runsheng; Zhuge, Jing; Huang, Ru; Tian, Yu; Xiao, Han; Zhang, Liangliang; Li, Chen; Zhang, Xing; Wang, Yangyuan |
1996 | Analysis of characteristics at buried oxide interfaces of SIMOX | Li, Yingxue; Xi, Xuemei; Wang, Zhaojiang; Zhang, Xing; Wang, Yangyuan; Lin, Chenglu |
2002 | Analysis of cross-talk effect in SOI analog-digital mixed integrated circuits | Zhan, Guoyan; Huang, Ru; Chan, Mansun; Zhang, Xing; Wang, Yangyuan |
1996 | Analysis of propagation characteristics of high-temperature superconducting interconnects for VLSI packing | Kang, Jinfeng; Han, Ruqi; Wang, Yangyuan |
2006 | An analytic model to account for quantum-mechanical effects of MOSFETs using a parabolic potential well approximation | He, Jin; Chan, Mansun; Zhang, Xing; Wang, Yangyuan |
1998 | Analytical current model for deep-submicrometer FO SOI MOSFET applicable to circuit simulation | Wang, Hongmei; Xi, Xuemei; Zhang, Xing; Wang, Yangyuan |
1996 | Analytical model for determining dependence of emitter transit time on polysilicon/silicon interfacial parameters | Ma, Pingxi; Zhang, Lichun; Zhao, Baoying; Wang, Yangyuan |
1995 | Analytical model of collector current density and base transit time | Ma, Pingxi; Zhang, Lichun; Wang, Yangyuan |