Browsing by Author Wen, C. P.

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Issue DateTitleAuthor(s)
2010Current Collapse, Memory Effect Free GaN HEMTWen, C. P.; Wang, J.; Hao, Y.
2010Current-controlled negative differential resistance effect induced by Gunn-type instability in n-type GaN epilayersMa, N.; Shen, B.; Xu, F. J.; Lu, L. W.; Feng, Z. H.; Zhang, Z. G.; Dun, S. B.; Wen, C. P.; Wang, J. Y.; Lin, F.; Zhang, D. T.; Sun, M.
2011Enhanced Device Performance of AlGaN/GaN High Electron Mobility Transistors with Thermal Oxidation TreatmentLiu, Shenghou; Wang, Jinyan; Gong, Rumin; Lin, Shuxun; Dong, Zhihua; Yu, Min; Wen, C. P.; Zeng, Chunhong; Cai, Yong; Zhang, Baoshun; Xu, Fujun; Zhang, Jincheng; Shen, Bo
2008Experimental evidence of surface mobile holes on GaNHEMT structureWen, C. P.; Wang, J. Y.; Hao, Y. L.; Shen, B.
2018GaN Lateral Schottky Diodes with High Baliga's Figure-of-Merit Utilizing Self-Terminated, Low Damage Anode Recessing TechnologyGao, J.; Jin, Y.; Xie, B.; Wen, C. P.; Hao, Y.; Wang, M.
2010Heterostructure HEMT Electronic Device Simulation with Density Functional TheoryHu, Yiqing; Wang, Jinyan; Wen, C. P.; Yu, Min; Mao, LingFeng; Hao, Yilong
2010High breakdown AlGaN/GaN MOSHEMT with thermal oxidized Ni/Ti as gate insulatorDong, Zhihua; Wang, Jinyan; Wen, C. P.; Gong, Danian; Li, Ying; Yu, Min; Hao, Yilong; Xu, Fujun; Shen, Bo; Wang, Yangyuan
2012High temperature induced failure in Ti/Al/Ni/Au Ohmic contacts on AlGaN/GaN heterostructureDong, Zhihua; Wang, Jinyan; Wen, C. P.; Liu, Shenghou; Gong, Rumin; Yu, Min; Hao, Yilong; Xu, Fujun; Shen, Bo; Wang, Yangyuan
2008Novel structural Ti/Al-based ohmic contacts on AlGaN/GaN heterostructuresDong, Zhihua; Wang, Jinyan; Yu, Min; Hao, Yilong; Wen, C. P.; Wang, Yangyuan