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| Issue Date | Title | Author(s) |
| 2014 | 900 V/1.6 m Omega . cm(2) Normally Off Al2O3/GaN MOSFET on Silicon Substrate | Wang, Maojun; Wang, Ye; Zhang, Chuan; Xie, Bing; Wen, Cheng P.; Wang, Jinyan; Hao, Yilong; Wu, Wengang; Chen, Kevin J.; Shen, Bo |
| 2010 | AlGaN/GaN dual gate MOS HFET for power device applications | Gong, Rumin; Wang, Jinyan; Liu, Shenghou; Dong, Zhihua; Wen, Cheng P.; Yu, Min; Cai, Yong; Zhang, Baoshun |
| 2012 | AlGaN/GaN HEMTs with Thermal Oxidation Treatment for Microwave Power Applications | Meng, Di; Liu, Shenghou; Lin, Shuxun; Wen, Cheng P.; Wang, Jinyan; Hao, Yilong; Wu, Wengang |
| 2010 | Analysis of surface roughness in Ti/Al/Ni/Au Ohmic contact to AlGaN/GaN high electron mobility transistors | Gong, Rumin; Wang, Jinyan; Liu, Shenghou; Dong, Zhihua; Yu, Min; Wen, Cheng P.; Cai, Yong; Zhang, Baoshun |
| 2013 | Analysis on the CTLM and LTLM applicability for GaN HEMTs structure alloyed ohmic contact resistance evaluation | Lin, Shuxun; Meng, Di; Wen, Cheng P.; Wang, Maojun; Wang, Jinyan; Hao, Yilong; Zhang, Yaohui; Lau, Kei May |
| 2010 | Analysis on the new mechanisms of low resistance stacked Ti/Al Ohmic contact structure on AlGaN/GaN HEMTs | Gong, Rumin; Wang, Jinyan; Dong, Zhihua; Liu, Shenghou; Yu, Min; Wen, Cheng P.; Hao, Yilong; Shen, Bo; Cai, Yong; Zhang, Baoshun; Zhang, Jincheng |
| 2016 | Buffer-Induced Time-Dependent OFF-State Leakage in AlGaN/GaN High Electron Mobility Transistors on Silicon | Tao, Ming; Wang, Maojun; Liu, Shaofei; Xie, Bing; Yu, Min; Wen, Cheng P.; Wang, Jinyan; Hao, Yilong; Wu, Wengang; Shen, Bo |
| 2013 | Characteristics of submicron-footprint TiO2 based AlGaN/GaN MOSHEMT on SiC substrate | Di, Meng; Lin, Shuxun; Wen, Cheng P.; Wang, Maojun; Wang, Jinyan; Hao, Yilong; Zhang, Yaohui; Lau, Kei May; Wu, Wengang |
| 2019 | A Compact Model for Border Traps in Lateral MOS Devices with Large Channel Resistance | Yin, Ruiyuan; Li, Yue; Lin, Wei; Wen, Cheng P.; Hao, Yilong; Fu, Yunyi; Wang, Maojun |
| 2018 | Correlation between border traps and exposed surface properties in gate recessed normally-off Al2O3/GaN MOSFET | Yin, Ruiyuan; Li, Yue; Sun, Yu; Wen, Cheng P.; Hao, Yilong; Wang, Maojun |
| Feb-2023 | Correlation Between Reverse Leakage Current and Electric Field Spreading in GaN Vertical SBD With High-Energy Ion Implanted Guard Rings | Xu, Jiayue; Liu, Xuan; Xie, Bing; Hao, Yilong; Wen, Cheng P.; Wei, Jin; Wang, Maojun |
| 2010 | Current Collapse, Memory Effect Free GaN HEMT | Wen, Cheng P.; Wang, Jinyan; Hao, Yilong |
| 2008 | Enhanced device performance of AlGaN/GaN HEMTs using thermal oxidation of electron-beam deposited Aluminum for gate oxide | Chen, Hongwei; Wang, Jinyan; Xu, Chuan; Yu, Min; Fu, Yang; Dong, Zhihua; Xu, Fujun; Hao, Yilong; Wen, Cheng P. |
| 2008 | Evidence of Mobile Holes on GaN HFET Barrier Layer Surface - Root Cause of High Power TransistorAmplifier Current Collapse | Wen, Cheng P.; Wang, Jinyan; Hao, Yilong; Zhang, Yaohui; Lau, Keimay; Tang |
| 2008 | Evidence of mobile holes on GaN HFET barrier layer surface - root cause of high power transistor amplifier current collapse | Wen, Cheng P.; Wang, Jinyan; Hao, Yilong; Zhang, Yaohui; Lau, Keimay; Tang |
| 2016 | A GaN HEMT Structure Allowing Self-Terminated, Plasma-Free Etching for High-Uniformity, High-Mobility Enhancement-Mode Devices | Lin, Shuxun; Wang, Maojun; Sang, Fei; Tao, Ming; Wen, Cheng P.; Xie, Bing; Yu, Min; Wang, Jinyan; Hao, Yilong; Wu, Wengang; Xu, Jun; Cheng, Kai; Shen, Bo |
| 2014 | GaN HEMT Structure Modeling and Characterization Techniques | Wen, Cheng P. |
| Mar-2023 | GaN-on-Si Quasi-Vertical p-n Diode With Junction Termination Extension Based on Hydrogen Plasma Treatment and Diffusion | Liu, Xuan; Wang, Maojun; Wei, Jin; Wen, Cheng P.; Xie, Bing; Hao, Yilong; Yang, Xuelin; Shen, Bo |
| 2018 | Gate-Recessed Normally OFF GaN MOSHEMT With High-Temperature Oxidation/Wet Etching Using LPCVD Si3N4 as the Mask | Gao, Jingnan; Jin, Yufeng; Hao, Yilong; Xie, Bing; Wen, Cheng P.; Shen, Bo; Wang, Maojun |
| 2017 | Gate-Recessed Normally-OFF GaN MOSHEMT With Improved Channel Mobility and Dynamic Performance Using AlN/Si3N4 as Passivation and Post Gate-Recess Channel Protection Layers | Liu, Shaofei; Wang, Maojun; Tao, Ming; Yin, Ruiyuan; Gao, Jingnan; Sun, Haozhe; Lin, Wei; Wen, Cheng P.; Wang, Jinyan; Wu, Wengang; Hao, Yilong; Zhang, Zhaofu; Chen, Kevin J.; Shen, Bo |
