Browsing by Author Wu, Dake

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Issue DateTitleAuthor(s)
2007A 0.4-V low noise amplifier using forward body bias technology for 5 GHz applicationWu, Dake; Huang, Ru; Wong, Waisum; Wang, Yangyuan
2009A control-gate-assisted erasing method for a single-poly EEPROM cell with metallic control gate structureWu, Dake; Huang, Ru; Wong, Waisum; Wang, Yangyuan
2008Fabrication of 32 nm vertical nMOSFETs with asymmetric graded lightly doped drain structureZhou, Falong; Huang, Ru; Wu, Dake; An, Xia; Guo, Ao; Xu, Xiaoyan; Zhang, Dacheng; Zhang, Xing; Wang, Yangyuan
2010High Density Capacitorless Dynamic Random Access Memory Cell with Quasi Silicon-on-Insulator Structure Based on Bulk SubstrateTang, Poren; Huang, Ru; Wu, Dake; Zhang, Yilin; Wang, Yangyuan
2010High density capacitorless dynamic random access memory cell with quasi silicon-on-insulator structure based on bulk substrateTang, Poren; Huang, Ru; Wu, Dake; Zhang, Yilin; Wang, Yangyuan
2009Impact of proton-radiation-induced spacer damage on the dc characteristics degradation in deep-submicron metal-oxide-semiconductor field effect transistorsXue, Shoubin; Huang, Ru; Wang, Pengfei; Wang, Wenhua; Wu, Dake; Pei, Yunpeng; Zhang, Xing
2008Investigation of silicon NC memory with improved threshold voltage windowKuang, Yongbian; Li, Yan; Wu, Dake; Yu, Zhe; Tang, Ruyan; Huang, Ru
2009Investigation of thermally robust single-component resistive switching organic memory cellKuang, Yongbian; Huang, Ru; Wu, Dake; Tang, Yu; Yu, Zhe; Ma, Ying; Zhang, Lijie; Tang, Poren; Gao, Dejin; Wen, Yongqiang; Song, Yanlin
2008Investigations on Proton-Irradiation-Induced Spacer Damage in Deep-Submicron MOSFETsXue, Shoubin; Wang, Pengfei; Huang, Ru; Wu, Dake; Pei, Yunpeng; Wang, Wenhua; Zhang, Xing
2009Investigations on the impact of the parasitic bottom transistor in gate-all-around silicon nanowire SONOS memory cells fabricated on bulk Si substrateAi, Yujie; Huang, Ru; Wang, Yiqun; Zhuge, Jing; Wu, Dake; Wang, Runsheng; Tang, Poren; Zhang, Lijie; Hao, Zhihua; Wang, Yangyuan
2008A low-voltage flash memory cell utilizing the gate-injection program/erase method with a recessed channel structureWu, Dake; Huang, Ru; Wang, Pengfei; Tang, Poren; Wang, Yangyuan
2009New Insights into Oxide Traps Characterization in Gate-All-Around Nanowire Transistors with TiN Metal Gates Based on Combined I(g)-I(d) RTS TechniqueZhang, Liangliang; Zhuge, Jing; Wang, Runsheng; Huang, Ru; Liu, Changze; Wu, Dake; Kang, Zhaoyi; Kim, Done-Won; Park, Donggun; Wang, Yangyuan
2009New insights into oxide traps characterization in gate-all-around nanowire transistors with TiN metal gates based on combined Ig-Id RTS techniqueZhang, Liangliang; Zhuge, Jing; Wang, Runsheng; Huang, Ru; Liu, Changze; Wu, Dake; Kang, Zhaoyi; Kim, Dong-Won; Park, Donggun; Wang, Yangyuan
2009A Novel RF LDMOS Fabricated With Standard Foundry TechnologyXiao, Han; Zhang, Lijie; Huang, Ru; Song, Fei; Wu, Dake; Liao, Huailin; Wong, Waisum; Wang, Yangyuan
2007Novel SONOS and floating-gate flash memory cell structures for high density and high reliability applications (invited)Huang, Ru; Zhou, Falong; Li, Yan; Wu, Dake; Cai, Yimao; Zhang, Xing; Wang, Yangyuan
2008A novel source/drain on void (SDOV) MOSFET implemented by local co-implantation of hydrogen and heliumWu, Dake; Huang, Ru; Bu, Weihai; Zhou, Falong; Tian, Yu; Chen, Baoqin; Feng, Chuguang; Chan, Mansun; Wang, Yangyuan
2009Novel Thermally Stable Single-Component Organic-Memory Cell Based on Oxotitanium Phthalocyanine MaterialKuang, Yongbian; Huang, Ru; Tang, Yu; Ding, Wei; Yu, Zhe; Ma, Ying; Zhang, Lijie; Wu, Dake; Wen, Yongqiang; Song, Yanlin
2009A novel vertical channel self-aligned split-gate flash memoryWu, Dake; Zhou, Falong; Huang, Ru; Li, Yan; Cai, Yimao; Guo, Ao; Zhang, Xing; Wang, Yangyuan
2008The Parasitic Effects Induced by the Contact in RRAM with MIM StructureZhang, Lijie; Huang, Ru; Wang, Albert Z. H.; Wu, Dake; Wang, Runsheng; Kuang, Yongbian
2010Performance Improvement of Capacitorless Dynamic Random Access Memory Cell with Band-Gap Engineered Source and DrainTang, Poren; Huang, Ru; Wu, Dake