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| Issue Date | Title | Author(s) |
| 15-Jun-2020 | 2 in. Free-standing GaN grown by HVPE with sputtered AlN buffer on GaAs substrate | Zhu, Xingyu; Wu, Jiejun; Cheng, Yutian; Dong, Boyu; Guo, Bingliang; Li, Mengda; Zhao, Qiyue; Zhang, Guoyi; Yu, Tongjun |
| 2014 | Angular distribution of polarized spontaneous emissions and its effect on light extraction behavior in InGaN-based light emitting diodes | Yuan, Gangcheng; Chen, Xinjuan; Yu, Tongjun; Lu, Huimin; Chen, Zhizhong; Kang, Xiangning; Wu, Jiejun; Zhang, Guoyi |
| 2010 | Anisotropic defect reduction in non-polar a-plane GaN grown by hydride vapor phase epitaxy on maskless patterned templates | Zhao, Lubing; Yu, Tongjun; Wu, Jiejun; Dai, Tao; Yang, Zhijian; Zhang, Guoyi |
| 2018 | Anisotropic Fracture Toughness of Bulk GaN | Cheng, Yutian; Cai, Duanjun; Wang, Hui; Wu, Jiejun; Liu, Xiangshun; Zhang, Guoyi; Yu, Tongjun |
| 2018 | Atomic-scale studies of (a plus c)-type dislocation dissociation in wurtzite GaN | Xiong, Huan; Wu, Jiejun; Fang, Zhilai |
| 2012 | Changing oblique angles of pyramid facets fabricated by wet etching of N polar GaN | Yu, Feng; Chen, Zhizhong; Qi, Shengli; Wang, Suyuan; Jiang, Shuang; Fu, Xingxing; Jiang, Xianzhe; Yu, Tongjun; Qin, Zhixin; Kang, Xiangning; Wu, Jiejun; Zhang, Guoyi |
| 2019 | Critical thickness of GaN film in controllable stress-induced self-separation for preparing native GaN substrates | Li, Mengda; Cheng, Yutian; Yu, Tongjun; Wu, Jiejun; He, Jinmi; Liu, Nanliu; Han, Tong; Zhang, Guoyi |
| 15-Oct-2022 | Crystalline orientation and anisotropy of semi-polar GaN films grown on m-sapphire substrate by hydride vapor phase epitaxy | Zhang, Lin; Wang, Zeren; Wu, Jiejun; Han, Tong; Liu, Fang; Zhu, Xingyu; Yu, Tongjun |
| 2007 | Effect of an indium-doped barrier on enhanced near-ultraviolet emission from InGaN/AlGaN: In multiple quantum wells grown on Si(111) | Wu, Jiejun; Zhang, Guoyi; Liu, Xianglin; Zhu, Qinsheng; Wang, Zhanguo; Jia, Quanjie; Guo, Liping |
| 2008 | Effect of indium-doped interlayer on the strain relief in GaN films grown on Si(111) | Wu, Jiejun; Zhao, Lubing; Zhang, Guoyi; Liu, Xianglin; Zhu, Qinsheng; Wang, Zhanguo; Jia, Quanjie; Guo, Liping; Hu, Tiandou |
| 2009 | Effects of growth temperature modulated by HCl flow rate on the surface and crystal qualities of thick GaN by HVPE | Zhao, Lubing; Wu, Jiejun; Xu, Ke; Yang, Zhijian; Zhang, Guoyi |
| 2016 | Exceptionally long GaN sub-micrometer rods grown by HVPE on a MOCVD-GaN rod template | Cheng, Yutian; Zong, Hua; Wu, Jiejun; Liu, Peng; Han, Tong; Yu, Tongjun; Hu, Xiaodong; Zhang, Guoyi |
| 2014 | GaN-based substrates and optoelectronic materials and devices | Zhang, Guoyi; Shen, Bo; Chen, Zhizhong; Hu, Xiaodong; Qin, Zhixin; Wang, Xinqiang; Wu, Jiejun; Yu, Tongjun; Kang, Xiangning; Fu, Xingxing; Yang, Wei; Yang, Zhijian; Gan, Zhizhao |
| 2012 | The growth of high-quality and self-separation GaN thick-films by hydride vapor phase epitaxy | Luo, Weike; Wu, Jiejun; Goldsmith, John; Du, Yanhao; Yu, Tongjun; Yang, Zhijian; Zhang, Guoyi |
| 2016 | High uniform growth of 4-inch GaN wafer via flow field optimization by HVPE | Cheng, Yutian; Liu, Peng; Wu, Jiejun; Xiang, Yong; Chen, Xinjuan; Ji, Cheng; Yu, Tongjun; Zhang, Guoyi |
| 2014 | Highly uniform growth of 2-inch GaN wafers with a multi-wafer HVPE system | Liu, Nanliu; Wu, Jiejun; Li, Wenhui; Luo, Ruihong; Tong, Yuzhen; Zhang, Guoyi |
| 2016 | HVPE homoepitaxial growth of high quality bulk GaN using acid wet etching method and its mechanism analysis | Liu, Nanliu; Cheng, Yutian; Wu, Jiejun; Li, Xingbin; Yu, Tongjun; Xiong, Huan; Li, Wenhui; Chen, Jiao; Zhang, Guoyi |
| 2014 | In situ self-release of thick GaN wafer from sapphire substrate via graded strain field engineering | Lin, Na; Wu, Jiejun; Xu, Hongmei; Liu, Nanliu; Zheng, Tongchang; Lin, Wei; Liu, Chuan; Cai, Duanjun |
| 2013 | Inclined Dislocation Generation in Compressive-Strain-Enhanced Mg-Doped GaN/Al0.15Ga0.85N Superlattice with AlN Interlayer | Li, Lei; Li, Ding; Wei, Qiyuan; Chen, Weihua; Yang, Zhijian; Wu, Jiejun; Zhang, Guoyi; Hu, Xiaodong |
| Mar-2021 | Influence of MO-GaN templates on the HVPE growth of semi-polar GaN thick films | Zhang, Lin; Wu, Jiejun; Han, Tong; Liu, Fang; Li, Mengda; Zhu, Xingyu; Zhao, Qiyue; Yu, Tongjun |
