Browsing by Author Xi, Xuemei

Jump to: 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Showing results 1 to 20 of 24  next >
Issue DateTitleAuthor(s)
1996Analysis of characteristics at buried oxide interfaces of SIMOXLi, Yingxue; Xi, Xuemei; Wang, Zhaojiang; Zhang, Xing; Wang, Yangyuan; Lin, Chenglu
1998Analytical current model for deep-submicrometer FO SOI MOSFET applicable to circuit simulationWang, Hongmei; Xi, Xuemei; Zhang, Xing; Wang, Yangyuan
1997Analytical modeling of the subthreshold current for deep-submicrometer fully depleted SOI MOSFET'sWang, Hongmei; Xi, Xuemei; Zhang, Xing; Wang, Yangyuan
2006BSIM model research and recent progressHe, Jin; Chan, Mansun; Xi, Xuemei; Wan, Hui; Pin, Shu; Niknejad, Ali; Hu, Chenming
2007BSIM5: An advanced charge-based MOSFET model for nanoscale VLSI circuit simulationHe, Jin; Xi, Xuemei; Wan, Hui; Dunga, Mohan; Chan, Mansun; Niknejad, Ali M.
1995CMOS/SOI ICs simulation and parameter extractionGan, Xuewen; Xi, Xuemei; Li, Yimin; Wang, Yangyuan
1997Development of low-voltage and high-speed CMOS/SIMOX devices and circuitsZhang, Xing; Xi, Xuemei; Wang, Rangyuan
1996Dose optimization study in SIMOX substratesXi, Xuemei; Li, Yingxue; Zhao, Qintai; Wang, Yangyuan; Lin, Chenglu
1998Effect of cobalt salicide on SOI CMOS radiation characteristicsZhang, Xing; Xi, Xuemei; Huang, Ru; Wang, Yangyuan
2010Erratum: Normalized mutual integral difference operator: A novel experimental method for extracting threshold voltage of MOSFETs (Microelectronics Journal (2002) 33 (667670))He, Jin; Xing, Zhang; Wang, Yangyuan; Xi, Xuemei; Chan, Mansun; Hu, Chenming
1996Fully depleted short-channel SOI LDD/LDS MDSFET model for VLSI circuits analysisXi, Xuemei; Wang, Yangyuan
1996High dose oxygen redistribution theory in SIMOX substratesXi, Xuemei; Zhao, Qingtai; Zhang, Xing; Li, Yingxue; Wang, Yangyuan; Chen, Xin; Wang, Youxiang
1998Investigation of recessed channel SOI devicesZhang, Xing; Huang, Ru; Xi, Xuemei; Chan, Mansun; Ko, Ping K.; Wang, Yangyuan
2002Linearly graded doping drift region: A novel lateral voltage-sustaining layer used for improvement of RESURF LDMOS transistor performancesHe, Jin; Xi, Xuemei; Chan, Mansun; Hu, Chenming; Li, Yingxue; Xing, Zhang; Huang, Ru
1995Low-voltage and high-speed CMOS/SIMOX technologyZhang, Xing; Wei, Liqiong; Xi, Xuemei; Wang, Yangyuan; Chu, Paul K.
1998New physical I-V model of deep-submicron FD SOI MOSFETs for analogue/digital circuit simulationXi, Xuemei; Wang, Hongmei; Zhang, Xing; Wang, Yangyuan
2002Normalized mutual integral difference operator: A novel experimental method for extracting threshold voltage of MOSFETsHe, Jin; Zhang, Xing; Wang, Yangyuan; Xi, Xuemei; Chan, Mansun; Hu, Chenming
1998Physical model of floating body effects and its suppression study in fully depleted SOI MOSFETsWang, Yangyuan; Xi, Xuemei; Zhang, Xing
1996A physical model of floating body effects in fully depleted silicon-on-insulator nMOSFETXi, Xuemei; Wang, Yangyuan
1996Study on radiation hardening technology for short channel CMOS/SOI devicesZhang, Xing; Xi, Xuemei; Wang, Yangyuan
Showing results 1 to 20 of 24  next >