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| Issue Date | Title | Author(s) |
| 8-Jun-2020 | Al diffusion at AlN/Si interface and its suppression through substrate nitridation | Wei, Lai; Yang, Xuelin; Shen, Jianfei; Liu, Danshuo; Cai, Zidong; Ma, Cheng; He, Xiaoguang; Tang, Jun; Qi, Shengli; Xu, Fujun; Wang, Xinqiang; Ge, Weikun; Shen, Bo |
| 2017 | Anisotropic strain relaxation and high quality AlGaN/GaN heterostructures on Si (110) substrates | Feng, Yuxia; Yang, Xuelin; Cheng, Jianpeng; Zhang, Jie; Ji, Panfeng; Shen, Jianfei; Hu, Anqi; Xu, Fujun; Yu, Tongjun; Wang, Xinqiang; Shen, Bo |
| 2014 | Anomalous temperature-dependent photoluminescence peak energy in InAlN alloys | Li, Wei; Jin, Peng; Wang, Weiying; Mao, Defeng; Liu, Guipeng; Wang, Zhanguo; Wang, Jiaming; Xu, Fujun; Shen, Bo |
| Mar-2023 | Atomic Plane Misorientation Assisted Crystalline Quality Improvement in Epitaxial Growth of AlN on a Nanopatterned Sapphire (0001) Surface for Deep Ultraviolet Photoelectric Devices | Deng, Yong; Xie, Nan; Hu, Wenyu; Ma, Zhenyu; Xu, Fujun; Chen, Longqing; Qiu, Wenbin; Zhao, Lin; Tao, Hong; Wu, Bo; Huang, Yi; Ma, Jian; Wang, Xiaoyi; Zhang, Xuqi; Qiu, Yang; Cui, Xudong; Jin, Chaoyuan; Chauvat, Marie-Pierre; Ruterana, Pierre; Walther, Thomas |
| 2019 | beta-Ga2O3 thin film grown on sapphire substrate by plasma-assisted molecular beam epitaxy | Wei, Jiaqi; Kim, Kumsong; Liu, Fang; Wang, Ping; Zheng, Xiantong; Chen, Zhaoying; Wang, Ding; Imran, Ali; Rong, Xin; Yang, Xuelin; Xu, Fujun; Yang, Jing; Shen, Bo; Wang, Xinqiang |
| Feb-2021 | Compressive strain induced enhancement of transverse-electric polarized ultraviolet light emission for AlGaN quantum wells | Zhang, Shixiong; Zhang, Yunfan; Tang, Ning; Wang, Weiying; Chen, Xinjuan; Fu, Lei; He, Chenguang; Lv, Yuanjie; Feng, Zhihong; Xu, Fujun; Yu, Tongjun; Ge, Weikun; Shen, Bo |
| 19-Apr-2021 | Control of dislocations in heteroepitaxial AlN films by extrinsic supersaturated vacancies introduced through thermal desorption of heteroatoms | Wang, Jiaming; Xu, Fujun; Liu, Baiyin; Lang, Jing; Zhang, Na; Kang, Xiangning; Qin, Zhixin; Yang, Xuelin; Wang, Xinqiang; Ge, Weikun; Shen, Bo |
| Mar-2022 | Correlation between electrical properties and growth dynamics for Si-doped Al-rich AlGaN grown by metal-organic chemical vapor deposition | Liu, Baiyin; Xu, Fujun; Wang, Jiaming; Lang, Jing; Wang, Liubing; Fang, Xuzhou; Yang, Xuelin; Kang, Xiangning; Wang, Xinqiang; Qin, Zhixin; Ge, Weikun; Shen, Bo |
| 2008 | Crystalline quality of inxAl1-xN with different indium contents around lattice-matched to GaN | Miao, Zhenlin; Yu, Tongjun; Shen, Bo; Xu, Fujun; Song, Jie; Lin, Fang; Zhao, Lubing; Yang, Zhijian |
| 2009 | Damage evolution in GaN under MeV heavy ion implantation | Gao, Yuan; Xue, Jianming; Zhang, Dongzheng; Wang, Zilong; Lan, Chune; Yan, Sha; Wang, Yugang; Xu, Fujun; Shen, Bo; Zhang, Yanwen |
| 2009 | Damage evolution in GaN under MeV heavy ion implantation | Gao, Yuan; Xue, Jianming; Zhang, Dongzheng; Wang, Zilong; Lan, Chune; Yan, Sha; Wang, Yugang; Xu, Fujun; Shen, Bo; Zhang, Yanwen |
| 2019 | Deep Ultraviolet Light Source from Ultrathin GaN/AlN MQW Structures with Output Power Over 2 Watt | Wang, Yixin; Rong, Xin; Ivanov, Sergey; Jmerik, Valentin; Chen, Zhaoying; Wang, Hui; Wang, Tao; Wang, Ping; Jin, Peng; Chen, Yanan; Kozlovsky, Vladimir; Sviridov, Dmitry E.; Zverev, Michail; Zhdanova, Elena; Gamov, Nikita; Studenov, Valentin; Miyake, Hideto; Li, Hongwei; Guo, Shiping; Yang, Xuelin; Xu, Fujun; Yu, Tongjun; Qin, Zhixin; Ge, Weikun; Shen, Bo; Wang, Xinqiang |
| 29-Jun-2020 | Direct evidence of hydrogen interaction with carbon: C-H complex in semi-insulating GaN | Wu, Shan; Yang, Xuelin; Zhang, Qing; Shang, Qiuyu; Huang, Huayang; Shen, Jianfei; He, Xiaoguang; Xu, Fujun; Wang, Xinqiang; Ge, Weikun; Shen, Bo |
| 2017 | Direct evidence of recombination between electrons in InGaN quantum discs and holes in p-type GaN | Sun, Xiaoxiao; Wang, Xinqiang; Wang, Ping; Wang, Tao; Sheng, Bowen; Zheng, Xiantong; Li, Mo; Zhang, Jian; Yang, Xuelin; Xu, Fujun; Ge, Weikun; Shen, Bo |
| 2016 | Edge Dislocations Triggered Surface Instability in Tensile Epitaxial Hexagonal Nitride Semiconductor | Cheng, Jianpeng; Yang, Xuelin; Zhang, Jie; Hu, Anqi; Ji, Panfeng; Feng, Yuxia; Guo, Lei; He, Chenguang; Zhang, Lisheng; Xu, Fujun; Tang, Ning; Wang, Xinqiang; Shen, Bo |
| 2008 | Effect of AlN interlayer thickness on leakage currents in Schottky contacts to Al(0.25)Ga(0.75)N/AlN/GaN heterostructures | Huang, Sen; Shen, Bo; Xu, Fujun; Lin, Fang; Miao, Zhenlin; Song, Jie; Lu, Lin; Qin, Zhixin; Yang, Zhijian; Zhang, Guoyi |
| 2008 | Effect of AlN interlayer thickness on leakage currents in Schottky contacts to Alo.25Gao.75N/AlN/GaN heterostructures | Huang, Sen; Shen, Bo; Xu, Fujun; Lin, Fang; Miao, Zhenlin; Song, Jie; Lu, Lin; Qin, Zhixin; Yang, Zhijian; Zhang, Guoyi |
| 2013 | Effect of Grain Boundary Scattering on Electron Mobility of N-Polarity InN Films | Zhang, Yuewei; Wang, Xinqiang; Zheng, Xiantong; Chen, Guang; Ma, Dingyu; Xu, Fujun; Tang, Ning; Ge, Weikun; Shen, Bo |
| 2016 | Effect of stress on the Al composition evolution in AlGaN grown using metal organic vapor phase epitaxy | He, Chenguang; Qin, Zhixin; Xu, Fujun; Zhang, Lisheng; Wang, Jiaming; Hou, Mengjun; Zhang, Shan; Wang, Xinqiang; Ge, Weikun; Shen, Bo |
| 2007 | Effects of annealing pressure of nucleation layer on high-resistivity GaN | Xu, Jian; Shen, Bo; Xu, Fujun; Miao, Zhenlin; Wang, Maojun; Huang, Sen; Lu, Lin; Pan, Yaobo; Yang, Zhijian; Zhang, Guoyi |
