| Issue Date | Title | Author(s) |
| 2009 | 1.53 mu m photo- and electroluminescence from Er3+ in erbium silicate | Yin, Y.; Sun, K.; Xu, W. J.; Ran, G. Z.; Qin, G. G.; Wang, S. M.; Wang, C. Q. |
| 2010 | 1.54-mu m electroluminescence from Si-rich erbium silicate | Ran, G. Z.; Yin, Y.; Wei, F.; Xu, W. J.; Qin, G. G. |
| 2008 | Blueshift of electroluminescence from single n-InP nanowire/p-Si heterojunctions due to the Burstein-Moss effect | Liu, C.; Dai, L.; You, L. P.; Xu, W. J.; Qin, G. G. |
| 2008 | Combination of passivated Si anode with phosphor doped organic to realize highly efficient Si-based electroluminescence | Zhao, W. Q.; Ran, G. Z.; Liu, Z. W.; Bian, Z. Q.; Sun, K.; Xu, W. J.; Huang, C. H.; Qin, G. G. |
| 2006 | Efficient 1.54 mu m light emitting diode with nanometer thick polycrystalline Si anode and organic sandwich structure | Zhao, W. Q.; Ran, G. Z.; Ma, G. L.; Xu, W. J.; Dai, L.; Liu, W. M.; Wang, P. F.; Qin, G. G. |
| 2013 | Electron-irradiated n(+)-Si as hole injection tunable anode of organic light-emitting diode | Li, Y. Z.; Wang, Z. L.; Wang, Y. Z.; Luo, H.; Xu, W. J.; Ran, G. Z.; Qin, G. G. |
| 2009 | Fine structure and high intensity of photoluminescence from Er doped in Ni-Si-O compounds | Sun, K.; Xu, W. J.; Ye, Y.; Ran, G. Z.; Qin, G. G. |
| 2007 | Growth, optical, and electrical properties of single-crystalline Si-CdSe biaxial p-n heterostructure nanowires | Zhang, Y. F.; Yout, L. P.; Shan, X. A.; Wei, X. L.; Huo, H. B.; Xu, W. J.; Dai, L. |
| 2008 | High-performance nanowire complementary metal-semiconductor inverters | Ma, R. M.; Dai, L.; Liu, C.; Xu, W. J.; Qin, G. G. |
| 2010 | Highly efficient phosphorescent organic light-emitting diode with a nanometer-thick Ni silicide polycrystalline p-Si composite anode | Li, Y. Z.; Wang, Z. L.; Luo, H.; Wang, Y. Z.; Xu, W. J.; Ran, G. Z.; Qin, G. G.; Zhao, W. Q.; Liu, H. |
| 2011 | Hybrid organic light emitting device with silicon-rich oxide as hole transporting layer | Ran, G. Z.; Jiang, D. F.; Yin, Y.; Xu, W. J. |
| 2008 | Inverted top-emission organic light-emitting device with n-type silicon as cathode | Zhao, W. Q.; Ran, G. Z.; Xu, W. J.; Qin, G. G. |
| 2010 | Multilayered graphene used as anode of organic light emitting devices | Sun, T.; Wang, Z. L.; Shi, Z. J.; Ran, G. Z.; Xu, W. J.; Wang, Z. Y.; Li, Y. Z.; Dai, L.; Qin, G. G. |
| 2008 | Passivated p-type silicon: Hole injection tunable anode material for organic light emission | Zhao, W. Q.; Ran, G. Z.; Xu, W. J.; Qin, G. G. |
| 2010 | Room temperature Er3+ 1.54 mu m electroluminescence from Si-rich erbium silicate deposited by magnetron sputtering | Yin, Y.; Xu, W. J.; Wei, F.; Ran, G. Z.; Qin, G. G.; Shi, Y. F.; Yao, Q. G.; Yao, S. D. |
| 2008 | Strong enhancement of Er(3+) 1.54 mu m electroluminescence through amorphous Si nanoparticles | Sun, K.; Xu, W. J.; Zhang, B.; You, L. P.; Ran, G. Z.; Qin, G. G. |
| 2008 | Synthesis of high quality p-type Zn3P2 nanowires and their application in MISFETs | Liu, C.; Dai, L.; You, L. P.; Xu, W. J.; Ma, R. M.; Yang, W. Q.; Zhang, Y. F.; Qin, G. G. |
| 2009 | Top-emission Si-based phosphor organic light emitting diode with Au doped ultrathin n-Si film anode and bottom Al mirror | Li, Y. Z.; Xu, W. J.; Ran, G. Z.; Qin, G. G. |
| 2010 | Ultralow-Power Complementary Metal-Oxide-Semiconductor Inverters Constructed on Schottky Barrier Modified Nanowire Metal-Oxide-Semiconductor Field-Effect-Transistors | Ma, R. M.; Peng, R. M.; Wen, X. N.; Dai, L.; Liu, C.; Sun, T.; Xu, W. J.; Qin, G. G. |
