Showing results 1 to 20 of 122
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| Issue Date | Title | Author(s) |
| 2014 | 2.6 mu m MBE grown InGaAs detectors with dark current of SRH and TAT | Ji, Xiaoli; Liu, Baiqing; Tang, Hengjing; Yang, Xuelin; Li, Xue; Gong, HaiMei; Shen, Bo; Han, Ping; Yan, Feng |
| Feb-2023 | 600-V p-GaN Gate HEMT With Buried Hole Spreading Channel Demonstrating Immunity Against Buffer Trapping Effects | Yang, Junjie; Wei, Jin; Wu, Yanlin; Nuo, Muqin; Chen, Zhenghao; Yang, Xuelin; Wang, Maojun; Shen, Bo |
| Feb-2023 | 600-V p-GaN Gate HEMT With Buried Hole Spreading Channel Demonstrating Immunity Against Buffer Trapping Effects | Yang, Junjie; Wei, Jin; Wu, Yanlin; Nuo, Muqin; Chen, Zhenghao; Yang, Xuelin; Wang, Maojun; Shen, Bo |
| 8-Jun-2020 | Al diffusion at AlN/Si interface and its suppression through substrate nitridation | Wei, Lai; Yang, Xuelin; Shen, Jianfei; Liu, Danshuo; Cai, Zidong; Ma, Cheng; He, Xiaoguang; Tang, Jun; Qi, Shengli; Xu, Fujun; Wang, Xinqiang; Ge, Weikun; Shen, Bo |
| 1-Nov-2024 | Analysis of On-Resistance in 650-V Enhancement-Mode Active-Passivation p-GaN Gate HEMT | Wu, Yanlin; Yang, Junjie; Yu, Jingjing; Chang, Hao; Yang, Xuelin; Wang, Jinyan; Hao, Yilong; Shen, Bo; Zhou, David; Wang, Maojun; Wei, Jin |
| 2017 | Anisotropic strain relaxation and high quality AlGaN/GaN heterostructures on Si (110) substrates | Feng, Yuxia; Yang, Xuelin; Cheng, Jianpeng; Zhang, Jie; Ji, Panfeng; Shen, Jianfei; Hu, Anqi; Xu, Fujun; Yu, Tongjun; Wang, Xinqiang; Shen, Bo |
| 2019 | beta-Ga2O3 thin film grown on sapphire substrate by plasma-assisted molecular beam epitaxy | Wei, Jiaqi; Kim, Kumsong; Liu, Fang; Wang, Ping; Zheng, Xiantong; Chen, Zhaoying; Wang, Ding; Imran, Ali; Rong, Xin; Yang, Xuelin; Xu, Fujun; Yang, Jing; Shen, Bo; Wang, Xinqiang |
| 19-Apr-2021 | Control of dislocations in heteroepitaxial AlN films by extrinsic supersaturated vacancies introduced through thermal desorption of heteroatoms | Wang, Jiaming; Xu, Fujun; Liu, Baiyin; Lang, Jing; Zhang, Na; Kang, Xiangning; Qin, Zhixin; Yang, Xuelin; Wang, Xinqiang; Ge, Weikun; Shen, Bo |
| Mar-2022 | Correlation between electrical properties and growth dynamics for Si-doped Al-rich AlGaN grown by metal-organic chemical vapor deposition | Liu, Baiyin; Xu, Fujun; Wang, Jiaming; Lang, Jing; Wang, Liubing; Fang, Xuzhou; Yang, Xuelin; Kang, Xiangning; Wang, Xinqiang; Qin, Zhixin; Ge, Weikun; Shen, Bo |
| 2019 | Deep Ultraviolet Light Source from Ultrathin GaN/AlN MQW Structures with Output Power Over 2 Watt | Wang, Yixin; Rong, Xin; Ivanov, Sergey; Jmerik, Valentin; Chen, Zhaoying; Wang, Hui; Wang, Tao; Wang, Ping; Jin, Peng; Chen, Yanan; Kozlovsky, Vladimir; Sviridov, Dmitry E.; Zverev, Michail; Zhdanova, Elena; Gamov, Nikita; Studenov, Valentin; Miyake, Hideto; Li, Hongwei; Guo, Shiping; Yang, Xuelin; Xu, Fujun; Yu, Tongjun; Qin, Zhixin; Ge, Weikun; Shen, Bo; Wang, Xinqiang |
| 2013 | Deep-level traps induced dark currents in extended wavelength InxGa1-xAs/InP photodetector | Ji, Xiaoli; Liu, Baiqing; Xu, Yue; Tang, Hengjing; Li, Xue; Gong, HaiMei; Shen, Bo; Yang, Xuelin; Han, Ping; Yan, Feng |
| 20-Feb-2024 | Development of Enhancement-Mode GaN p-FET With Post-Etch Wet Treatment on p-GaN Gate HEMT Epi-Wafer | Li, Teng; Zhang, Meng; Yu, Jingjing; Cui, Jiawei; Yang, Junjie; Wu, Yanlin; Yang, Han; Zhang, Yamin; Yang, Xuelin; Wang, Maojun; Feng, Shiwei; Shen, Bo; Wei, Jin |
| 29-Jun-2020 | Direct evidence of hydrogen interaction with carbon: C-H complex in semi-insulating GaN | Wu, Shan; Yang, Xuelin; Zhang, Qing; Shang, Qiuyu; Huang, Huayang; Shen, Jianfei; He, Xiaoguang; Xu, Fujun; Wang, Xinqiang; Ge, Weikun; Shen, Bo |
| 2017 | Direct evidence of recombination between electrons in InGaN quantum discs and holes in p-type GaN | Sun, Xiaoxiao; Wang, Xinqiang; Wang, Ping; Wang, Tao; Sheng, Bowen; Zheng, Xiantong; Li, Mo; Zhang, Jian; Yang, Xuelin; Xu, Fujun; Ge, Weikun; Shen, Bo |
| 2018 | Direct-readout pressure sensor based on AlGaN/GaN heterostructure | Tan, Xin; Lv, Yuanjie; Zhou, Xinye; Wang, Yuangang; Song, Xubo; Yang, Xuelin; Shen, Bo; Feng, Zhihong; Cai, Shujun |
| 2016 | Edge Dislocations Triggered Surface Instability in Tensile Epitaxial Hexagonal Nitride Semiconductor | Cheng, Jianpeng; Yang, Xuelin; Zhang, Jie; Hu, Anqi; Ji, Panfeng; Feng, Yuxia; Guo, Lei; He, Chenguang; Zhang, Lisheng; Xu, Fujun; Tang, Ning; Wang, Xinqiang; Shen, Bo |
| 1-Oct-2022 | Effect of carbon impurity on the dislocation climb in epitaxial GaN on Si substrates | Yang, Xuelin; Shen, Jianfei; Cai, Zidong; Chen, Zhenghao; Shen, Bo |
| 2016 | Effect of interface and bulk traps on the C-V characterization of a LPCVD-SiNx/AlGaN/GaN metal-insulator-semiconductor structure | Bao, Qilong; Huang, Sen; Wang, Xinhua; Wei, Ke; Zheng, Yingkui; Li, Yankui; Yang, Chengyue; Jiang, Haojie; Li, Junfeng; Hu, Anqi; Yang, Xuelin; Shen, Bo; Liu, Xinyu; Zhao, Chao |
| Aug-2020 | The effect of kink and vertical leakage mechanisms in GaN-on-Si epitaxial layers | Song, Chunyan; Yang, Xuelin; Wang, Ding; Ji, Panfeng; Wu, Shan; Xu, Yue; Wang, Maojun; Shen, Bo |
| 1-Feb-2023 | Effects of Al doping on dislocation inclinations and strain of GaN films on Si substrates | Zhang, Jie; Yang, Xuelin; Ma, Hongping; Zhang, Qingchun; Shen, Bo |
