Browsing by Author Yang, Xuelin

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Issue DateTitleAuthor(s)
20142.6 mu m MBE grown InGaAs detectors with dark current of SRH and TATJi, Xiaoli; Liu, Baiqing; Tang, Hengjing; Yang, Xuelin; Li, Xue; Gong, HaiMei; Shen, Bo; Han, Ping; Yan, Feng
8-Jun-2020Al diffusion at AlN/Si interface and its suppression through substrate nitridationWei, Lai; Yang, Xuelin; Shen, Jianfei; Liu, Danshuo; Cai, Zidong; Ma, Cheng; He, Xiaoguang; Tang, Jun; Qi, Shengli; Xu, Fujun; Wang, Xinqiang; Ge, Weikun; Shen, Bo
2017Anisotropic strain relaxation and high quality AlGaN/GaN heterostructures on Si (110) substratesFeng, Yuxia; Yang, Xuelin; Cheng, Jianpeng; Zhang, Jie; Ji, Panfeng; Shen, Jianfei; Hu, Anqi; Xu, Fujun; Yu, Tongjun; Wang, Xinqiang; Shen, Bo
2019beta-Ga2O3 thin film grown on sapphire substrate by plasma-assisted molecular beam epitaxyWei, Jiaqi; Kim, Kumsong; Liu, Fang; Wang, Ping; Zheng, Xiantong; Chen, Zhaoying; Wang, Ding; Imran, Ali; Rong, Xin; Yang, Xuelin; Xu, Fujun; Yang, Jing; Shen, Bo; Wang, Xinqiang
19-Apr-2021Control of dislocations in heteroepitaxial AlN films by extrinsic supersaturated vacancies introduced through thermal desorption of heteroatomsWang, Jiaming; Xu, Fujun; Liu, Baiyin; Lang, Jing; Zhang, Na; Kang, Xiangning; Qin, Zhixin; Yang, Xuelin; Wang, Xinqiang; Ge, Weikun; Shen, Bo
Mar-2022Correlation between electrical properties and growth dynamics for Si-doped Al-rich AlGaN grown by metal-organic chemical vapor depositionLiu, Baiyin; Xu, Fujun; Wang, Jiaming; Lang, Jing; Wang, Liubing; Fang, Xuzhou; Yang, Xuelin; Kang, Xiangning; Wang, Xinqiang; Qin, Zhixin; Ge, Weikun; Shen, Bo
2019Deep Ultraviolet Light Source from Ultrathin GaN/AlN MQW Structures with Output Power Over 2 WattWang, Yixin; Rong, Xin; Ivanov, Sergey; Jmerik, Valentin; Chen, Zhaoying; Wang, Hui; Wang, Tao; Wang, Ping; Jin, Peng; Chen, Yanan; Kozlovsky, Vladimir; Sviridov, Dmitry E.; Zverev, Michail; Zhdanova, Elena; Gamov, Nikita; Studenov, Valentin; Miyake, Hideto; Li, Hongwei; Guo, Shiping; Yang, Xuelin; Xu, Fujun; Yu, Tongjun; Qin, Zhixin; Ge, Weikun; Shen, Bo; Wang, Xinqiang
2013Deep-level traps induced dark currents in extended wavelength InxGa1-xAs/InP photodetectorJi, Xiaoli; Liu, Baiqing; Xu, Yue; Tang, Hengjing; Li, Xue; Gong, HaiMei; Shen, Bo; Yang, Xuelin; Han, Ping; Yan, Feng
29-Jun-2020Direct evidence of hydrogen interaction with carbon: C-H complex in semi-insulating GaNWu, Shan; Yang, Xuelin; Zhang, Qing; Shang, Qiuyu; Huang, Huayang; Shen, Jianfei; He, Xiaoguang; Xu, Fujun; Wang, Xinqiang; Ge, Weikun; Shen, Bo
2017Direct evidence of recombination between electrons in InGaN quantum discs and holes in p-type GaNSun, Xiaoxiao; Wang, Xinqiang; Wang, Ping; Wang, Tao; Sheng, Bowen; Zheng, Xiantong; Li, Mo; Zhang, Jian; Yang, Xuelin; Xu, Fujun; Ge, Weikun; Shen, Bo
2018Direct-readout pressure sensor based on AlGaN/GaN heterostructureTan, Xin; Lv, Yuanjie; Zhou, Xinye; Wang, Yuangang; Song, Xubo; Yang, Xuelin; Shen, Bo; Feng, Zhihong; Cai, Shujun
2016Edge Dislocations Triggered Surface Instability in Tensile Epitaxial Hexagonal Nitride SemiconductorCheng, Jianpeng; Yang, Xuelin; Zhang, Jie; Hu, Anqi; Ji, Panfeng; Feng, Yuxia; Guo, Lei; He, Chenguang; Zhang, Lisheng; Xu, Fujun; Tang, Ning; Wang, Xinqiang; Shen, Bo
1-Oct-2022Effect of carbon impurity on the dislocation climb in epitaxial GaN on Si substratesYang, Xuelin; Shen, Jianfei; Cai, Zidong; Chen, Zhenghao; Shen, Bo
2016Effect of interface and bulk traps on the C-V characterization of a LPCVD-SiNx/AlGaN/GaN metal-insulator-semiconductor structureBao, Qilong; Huang, Sen; Wang, Xinhua; Wei, Ke; Zheng, Yingkui; Li, Yankui; Yang, Chengyue; Jiang, Haojie; Li, Junfeng; Hu, Anqi; Yang, Xuelin; Shen, Bo; Liu, Xinyu; Zhao, Chao
Aug-2020The effect of kink and vertical leakage mechanisms in GaN-on-Si epitaxial layersSong, Chunyan; Yang, Xuelin; Wang, Ding; Ji, Panfeng; Wu, Shan; Xu, Yue; Wang, Maojun; Shen, Bo
1-Feb-2023Effects of Al doping on dislocation inclinations and strain of GaN films on Si substratesZhang, Jie; Yang, Xuelin; Ma, Hongping; Zhang, Qingchun; Shen, Bo
2014Effects of light illumination on electron velocity of AlGaN/GaN heterostructures under high electric fieldGuo, Lei; Yang, Xuelin; Feng, Zhihong; Lv, Yuanjie; Cheng, Jianpeng; Sang, Ling; Xu, Fujun; Tang, Ning; Wang, Xinqiang; Ge, Weikun; Shen, B.
7-Feb-2022Elastic strain engineered nanomechanical GaN resonators with thermoelastic dissipation dilution up to 600 KSun, Huanying; Sang, Liwen; Shen, Xiulin; Yang, Xuelin; Li, Tiefu; You, J. Q.; Shen, Bo; Liao, Meiyong
2014Electronic properties of polycrystalline graphene under large local strainHe, Xin; Gao, Li; Tang, Ning; Duan, Junxi; Mei, Fuhong; Meng, Hu; Lu, Fangchao; Xu, Fujun; Wang, Xinqiang; Yang, Xuelin; Ge, Weikun; Shen, Bo
2017Enhanced transport properties in InAlGaN/AlN/GaN heterostructures on Si (111) substrates: The role of interface qualityZhang, Jie; Yang, Xuelin; Cheng, Jianpeng; Feng, Yuxia; Ji, Panfeng; Hu, Anqi; Xu, Fujun; Tang, Ning; Wang, Xinqiang; Shen, Bo