Browsing by Author Zhang, Lining

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Issue DateTitleAuthor(s)
20113-D Numerical Simulation Study on 20 nm NMOSFET DesignShi, Min; He, Jin; Liu, Zhiwei; Wang, Wenping; Zhao, Wei; Wang, Ruonan; Wu, Wen; Ma, Yong; Zhang, Dongwei; Bian, Wei; Chan, Mansun; Zhang, Xukai; Zhang, Lining
2016An Algorithm of Training Sample Selection for Integrated Circuit Device Modeling Based on Artificial Neural NetworksZhang, Zhiyuan; Cui, Xiaole; Lin, Xinnan; Zhang, Lining
2009An Analytic Channel Potential Based Model for Dynamic Depletion Surrounding-Gate MOSFETs with Arbitrary Doping LevelZhang, Lining; Zhang, Jian; Liu, Feng; Chen, Lin; Xu, Yiwen; Zhou, Wang; He, Frank
2009An Analytic Model for Ge/Si Core/Shell Nanowire MOSFETs Considering Drift-Diffusion and Ballistic TransportZhang, Lining; He, Jin; Zhang, Jian; Liu, Feng; Fu, Yue; Song, Yan; Zhang, Xing
2008An Analytic Model for Nanowire MOSFETs With Ge/Si Core/Shell StructureZhang, Lining; He, Jin; Zhang, Jian; Liu, Feng; Fu, Yue; Song, Yan; Zhang, Xing
2009An Analytic Model of Silicon-based Nanowire Gated Field Effect Transistor Terahertz Signal DetectionSong, Yan; Chen, Yu; Mu, Xuehao; Lou, Haijun; Zhang, Lining; He, Jin
2009An analytic model of silicon-based nanowire gated field effect transistor terahertz signal detectionSong, Yan; Chen, Yu; Mu, Xuehao; Lou, Haijun; Zhang, Lining; He, Jin
2009An Analytic Model of the Silicon-Based Nanowire Schottky Barrier MOSFETZhou, Xingye; Che, Yuchi; Zhang, Lining; He, Jin; Chan, Mansun
2009Analytic MOSFET Surface Potential Model with Inclusion of Poly-Gate Accumulation, Depletion, and Inversion EffectsSong, Yan; He, Jin; Zhang, Lining; Zhang, Jian
2009Analytic MOSFET surface potential model with inclusion of poly-gate accumulation, depletion, and inversion effectsSong, Yan; He, Jin; Zhang, Lining; Zhang, Jian
2011Analytic potential model for asymmetricunderlap gate-all-around MOSFETWang, Shaodi; Guo, Xinjie; Zhang, Lining; Zhang, Chenfei; Liu, Zhiwei; Wang, Guozeng; Zhang, Yang; Wu, Wen; Zhao, Xiaojin; Wang, Wenping; Cao, Yu; Ye, Yun; Wang, Ruonan; Ma, Yong; He, Jin
2010Analytic potential solution for modeling the symmetric DG accumulation mode MOSFETsChen, Lin; Xu, Yiwen; Zhang, Lining; Zhou, Wang; He, Frank
2008An analytic surface potential based non-charge-sheet poly-Si TFT model including substrate and film thickness effectsHu, Jinhua; Zhang, Jian; Zhang, Lining; Liu, Feng; He, Jin
2012An Analytical Charge Model for Double-Gate Tunnel FETsZhang, Lining; Lin, Xinnan; He, Jin; Chan, Mansun
2016Analytical Current Model for Long-Channel Junctionless Double-Gate MOSFETsLin, Xinnan; Zhang, Baili; Xiao, Ying; Lou, Haijun; Zhang, Lining; Chan, Mansun
2010Analytical solution of subthreshold channel potential of gate underlap cylindrical gate-all-around MOSFETZhang, Lining; Ma, Chenyue; He, Jin; Lin, Xinnan; Chan, Mansun
2010Analytical subthreshold channel potential model of asymmetric gate underlap gate-all-around MOSFETWang, Shaodi; Guo, Xinjie; Zhang, Lining; Zhang, Chenfei; He, Frank; Chan, Mansun
2009An Analytical Terahertz Detection Theory for Silicon-Based Nanowire MOS Field Effect TransistorChen, Yu; He, Jin; Mu, Xuehong; Lou, Haijun; Zhang, Lining; Song, Yan; Yang, Zhifeng; Zhu, Jinxuan; Cao, Juncheng
2010Bandstructures of unstrained and strained silicon nanowireZhang, Lining; Lou, Haijun; Liu, Zhiwei; He, Frank; Chan, Mansun
2009Benchmark tests on symmetry and continuity characteristics between BSIM4 and ULTRA-BULKNiu, Xudong; Li, Bo; Song, Yan; Zhang, Lining; He, Jin