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| Issue Date | Title | Author(s) |
| 2015 | 1/f Noise Expressions for Amorphous InGaZnO TFTs Considering Mobility Power-Law Parameter in Above-Threshold Regime | He, Hongyu; Zheng, Xueren; Zhang, Shengdong |
| 2010 | An 11-bit and 39 ps resolution time-to-digital converter for ADPLL in digital television | Liu, Wei; Li, Wei; Ren, P.; Lin, C. L.; Zhang, Shengdong; Wang, Yangyuan |
| Mar-2020 | A 16-bit Hybrid ADC with Circular-Adder-Based Counting for 15 mu m Pitch 640x512 LWIR FPAs | Huang, Zhaofeng; Zhu, Yajun; Lu, Wengao; Niu, Yuze; Zhang, Shengdong; Chen, Zhongjian |
| 2018 | A 16-bit Single-Slope based Pixel-level ADC for 15 mu m-pitch 640x512 MWIR FPAs | Huang, Zhaofeng; Niu, Yuze; Lu, Wengao; Chen, Guangyi; Li, Yi; Zhang, Shengdong; Chen, Zhongjian |
| 2018 | A 16-bit Single-Slope based Pixel-level ADC for 15μm-pitch 640×512 MWIR FPAs | Huang, Zhaofeng; Niu, Yuze; Lu, Wengao; Chen, Guangyi; Li, Yi; Zhang, Shengdong; Chen, Zhongjian |
| 2017 | A 27.6 MHz 297 mu W 33 ppm/degrees C CMOS Relaxation Oscillator With An Adjustable Temperature Compensation Scheme | Zhao, Qiang; Xie, Ruibin; Ma, Yihua; Xie, Fengbo; Lin, Feng; Zhang, Shengdong |
| 2007 | 3-Dimensional integration for interconnect reduction in for nano-CMOS technologies | Chan, Mansun; Zhang, Shengdong; Lin, Xinnan; Wu, Xusheng; Chan, Philip C.-H. |
| 2023 | 3-Masks-Processed Sub-100 nm Amorphous InGaZnO Thin-Film Transistors for Monolithic 3D Capacitor-Less Dynamic Random Access Memories | Zhang, Yuqing; Li, Jiye; Li, Jinxiong; Huang, Tengyan; Guan, Yuhang; Zhang, Yuhan; Yang, Huan; Chan, Mansun; Wang, Xinwei; Lu, Lei; Zhang, Shengdong |
| Feb-2021 | 31-Inch 4K Flexible Display Employing Gate Driver With Metal Oxide Thin-Film Transistors | Xue, Yan; Wang, Longjie; Zhang, Yu; Liang, Guangmin; Chu, Junwei; Han, Baixiang; Cao, Weiran; Liao, Congwei; Zhang, Shengdong |
| 2022 | A 32 x 32 Avalanche Photodiode Array Read-out Circuit with Rapid Active-Quenching and High-Voltage Protection | Guo, Fan; Zhang, Yacong; Lu, Wengao; Chen, Zhongjian; Zhang, Shengdong |
| Jan-2020 | A-80 dB PSRR 4.99 ppm/degrees C TC bandgap reference with nonlinear compensation | Liang, Jian; Yi, Shuiping; Bai, Wenlong; Wang, Lidan; Zhan, Chenchang; Liao, Congwei; Lam, Hing-Mo; Zhang, Min; Zhang, Shengdong; Jiao, Hailong |
| 2012 | An a-IGZO TFT Pixel Circuit for AMOLED with Simultaneous V-T Compensation | Leng, Chuanli; Liao, Congwei; Wang, Longyan; Zhang, Shengdong |
| 2012 | An a-IGZO TFT pixel circuit for AMOLED with simultaneous VT compensation | Leng, Chuanli; Liao, Congwei; Wang, Longyan; Zhang, Shengdong |
| 2013 | a-IGZO TFTs With Inductively Coupled Plasma Chemical Vapor Deposited SiOx Gate Dielectric | Xiao, Xiang; Deng, Wei; He, Xin; Zhang, Shengdong |
| 2014 | A-IGZO thin film transistors with channel layer deposited at room temperature and 250C | Deng, Wei; He, Xin; Xiao, Xiang; Wang, Ling; Meng, Weizhi; Zhang, Shengdong |
| 2022 | A-Si TFT Integrated Gate Driver Workable at-40 degrees C Using Bootstrapped Carry Signal | Yang, Jiwen; Liao, Congwei; Wang, Kun; An, Junjun; Shen, Shuai; Zhang, Shengdong |
| 2014 | A-Si:H TFT gate driver with shared dual pull-down units for large-sized TFT-LCD applications | Hu, Zhijin; Liao, Congwei; Li, Junmei; Li, Wenjie; Zhang, Shengdong; Zeng, Limei; Lee, Chang-Yeh; Lai, Tzu-Chieh; Lo, Chang-Cheng; Lien, A. |
| 2014 | A-Si:H TFT gate driver with shared dual pull-down units for large-sized TFT-LCD applications | Hu, Zhijin; Liao, Congwei; Li, Junmei; Li, Wenjie; Zhang, Shengdong; Zeng, Limei; Lee, Chang-Yeh; Lai, Tzu-Chieh; Lo, Chang-Cheng; Lien, A. |
| 2015 | Above-Threshold 1/f Noise Expression for Amorphous InGaZnO Thin-Film Transistors Considering Series Resistance Noise | He, Hongyu; Zheng, Xueren; Zhang, Shengdong |
| 2015 | An Accurate and Fast Current-Biased Voltage-Programmed AMOLED Pixel Circuit With OLED Biased in AC Mode | Wang, Cuicui; Leng, Chuanli; Wang, Longyan; Lu, Wengao; Zhang, Shengdong |
