Showing results 1 to 20 of 27
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| Issue Date | Title | Author(s) |
| 2019 | beta-Ga2O3 thin film grown on sapphire substrate by plasma-assisted molecular beam epitaxy | Wei, Jiaqi; Kim, Kumsong; Liu, Fang; Wang, Ping; Zheng, Xiantong; Chen, Zhaoying; Wang, Ding; Imran, Ali; Rong, Xin; Yang, Xuelin; Xu, Fujun; Yang, Jing; Shen, Bo; Wang, Xinqiang |
| Nov-2022 | Cathodoluminescence Spectroscopy in Graded InxGa1-xN | Zhao, Xiaofang; Wang, Tao; Sheng, Bowen; Zheng, Xiantong; Chen, Li; Liu, Haihui; He, Chao; Xu, Jun; Zhu, Rui; Wang, Xinqiang |
| 2018 | Determination of the transition point from electron accumulation to depletion at the surface of InxGa1-xN films | Sun, Xiaoxiao; Wang, Xinqiang; Liu, Shitao; Wang, Ping; Wang, Ding; Zheng, Xiantong; Sang, Liwen; Sumiya, Masatomo; Ueda, Shigenori; Li, Mo; Zhang, Jian; Ge, Weikun; Shen, Bo |
| 2017 | Direct evidence of recombination between electrons in InGaN quantum discs and holes in p-type GaN | Sun, Xiaoxiao; Wang, Xinqiang; Wang, Ping; Wang, Tao; Sheng, Bowen; Zheng, Xiantong; Li, Mo; Zhang, Jian; Yang, Xuelin; Xu, Fujun; Ge, Weikun; Shen, Bo |
| 2013 | Effect of Grain Boundary Scattering on Electron Mobility of N-Polarity InN Films | Zhang, Yuewei; Wang, Xinqiang; Zheng, Xiantong; Chen, Guang; Ma, Dingyu; Xu, Fujun; Tang, Ning; Ge, Weikun; Shen, Bo |
| 2018 | Effect of indium droplets on growth of InGaN film by molecular beam epitaxy | Zheng, Xiantong; Liang, Hongwei; Wang, Ping; Sun, Xiaoxiao; Chen, Zhaoying; Wang, Tao; Sheng, Bowen; Wang, Yixin; Chen, Ling; Wang, Ding; Rong, Xin; Li, Mo; Zhang, Jian; Wang, Xinqiang |
| 2014 | Epitaxy of InGaN random and digital alloys towards solar cells | Wang, Xinqiang; Zheng, Xiantong; Ma, Dingyu; Wang, Ping; Rong, Xing; Shen, Bo |
| 2017 | Exciton emission of quasi-2D InGaN in GaN matrix grown by molecular beam epitaxy | Ma, Dingyu; Rong, Xin; Zheng, Xiantong; Wang, Weiying; Wang, Ping; Schulz, Tobias; Albrecht, Martin; Metzner, Sebastian; Mueller, Mathias; August, Olga; Bertram, Frank; Christen, Juergen; Jin, Peng; Li, Mo; Zhang, Jian; Yang, Xuelin; Xu, Fujun; Qin, Zhixin; Ge, Weikun; Shen, Bo; Wang, Xinqiang |
| 2019 | Experimental Evidence of Large Bandgap Energy in Atomically Thin AlN | Wang, Ping; Wang, Tao; Wang, Hui; Sun, Xiaoxiao; Huang, Pu; Sheng, Bowen; Rong, Xin; Zheng, Xiantong; Chen, Zhaoying; Wang, Yixin; Wang, Ding; Liu, Huapeng; Liu, Fang; Yang, Liuyun; Li, Duo; Chen, Ling; Yang, Xuelin; Xu, Fujun; Qin, Zhixin; Shi, Junjie; Yu, Tongjun; Ge, Weikun; Shen, Bo; Wang, Xinqiang |
| 2015 | Fabrication of monolayer-thick InN/InGaN single-quantum-well structures emitting at 1.55 mu m | Chen, Qiming; Yan, Changling; Qu, Yi; Zheng, Xiantong; Rong, Xin; Wang, Ping |
| 2015 | Fabrication of monolayer-thick InN/InGaN single-quantum-well structures emitting at 1.55μm | Chen, Qiming; Yan, Changling; Qu, Yi; Zheng, Xiantong; Rong, Xin; Wang, Ping |
| 2012 | Fe-doped InN layers grown by molecular beam epitaxy | Wang, Xinqiang; Liu, Shitao; Ma, Dingyu; Zheng, Xiantong; Chen, Guang; Xu, Fujun; Tang, Ning; Shen, Bo; Zhang, Peng; Cao, Xingzhong; Wang, Baoyi; Huang, Sen; Chen, Kevin J.; Zhou, Shengqiang; Yoshikawa, Akihiko |
| Sep-2020 | Hexagonal BN-Assisted Epitaxy of Strain Released GaN Films for True Green Light-Emitting Diodes | Liu, Fang; Yu, Ye; Zhang, Yuantao; Rong, Xin; Wang, Tao; Zheng, Xiantong; Sheng, Bowen; Yang, Liuyun; Wei, Jiaqi; Wang, Xuepeng; Li, Xianbin; Yang, Xuelin; Xu, Fujun; Qin, Zhixin; Zhang, Zhaohui; Shen, Bo; Wang, Xinqiang |
| 1-Jan-2022 | High electron mobility in nearly-dislocation-free hexagonal InN | Chen, Ling; Sheng, Shanshan; Sheng, Bowen; Wang, Tao; Yang, Liuyun; Zhang, Baoqing; Yang, Jiajia; Zheng, Xiantong; Chen, Zhaoying; Wang, Ping; Ge, Weikun; Shen, Bo; Wang, Xinqiang |
| 2018 | High-electron-mobility InN epilayers grown on silicon substrate | Liu, Huapeng; Wang, Xinqiang; Chen, Zhaoying; Zheng, Xiantong; Wang, Ping; Sheng, Bowen; Wang, Tao; Rong, Xin; Li, Mo; Zhang, Jian; Yang, Xuelin; Xu, Fujun; Ge, Weikun; Shen, Bo |
| 2018 | High-Mobility Two-Dimensional Electron Gas at InGaN/InN Heterointerface Grown by Molecular Beam Epitaxy | Wang, Tao; Wang, Xinqiang; Chen, Zhaoying; Sun, Xiaoxiao; Wang, Ping; Zheng, Xiantong; Rong, Xin; Yang, Liuyun; Guo, Weiwei; Wang, Ding; Cheng, Jianpeng; Lin, Xi; Li, Peng; Li, Jun; He, Xin; Zhang, Qiang; Li, Mo; Zhang, Jian; Yang, Xuelin; Xu, Fujun; Ge, Weikun; Zhang, Xixiang; Shen, Bo |
| 2019 | Intensive luminescence from a thick, indium-rich In0.7Ga0.3N film | Sheng, Bowen; Bertram, Frank; Zheng, Xiantong; Wang, Ping; Schmidt, Gordon; Veit, Peter; Blaesing, Juergen; Chen, Zhaoying; Strittmatter, Andre; Christen, Juergen; Shen, Bo; Wang, Xinqiang |
| 2014 | Intersubband transition in AlGaN/GaN step quantum wells at 3-5 ��m | Rong, Xin; Wang, Xinqiang; Chen, Guang; Wang, Ping; Zheng, Xiantong; Xu, Fujun; Shen, Bo |
| 2018 | Investigation of InGaN Layer Grown Under In-Rich Condition by Reflectance Difference Spectroscopy Microscope | Zheng, Xiantong; Huang, Wei; Liang, Hongwei; Wang, Ping; Liu, Yu; Chen, Zhaoying; Liang, Ping; Li, Mo; Zhang, Jian; Chen, Yonghai; Wang, Xinqiang |
| 2016 | Lattice-Polarity-Driven Epitaxy of Hexagonal Semiconductor Nanowires | Wang, Ping; Yuan, Ying; Zhao, Chao; Wang, Xinqiang; Zheng, Xiantong; Rong, Xin; Wang, Tao; Sheng, Bowen; Wang, Qingxiao; Zhang, Yongqiang; Bian, Lifeng; Yang, Xuelin; Xu, Fujun; Qin, Zhixin; Li, Xinzheng; Zhang, Xixiang; Shen, Bo |
