TitleEffect of indium-doped interlayer on the strain relief in GaN films grown on Si(111)
AuthorsWu, Jiejun
Zhao, Lubing
Zhang, Guoyi
Liu, Xianglin
Zhu, Qinsheng
Wang, Zhanguo
Jia, Quanjie
Guo, Liping
Hu, Tiandou
AffiliationPeking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Res Ctr Wide Gap Semicond, Beijing 100871, Peoples R China.
Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
Chinese Acad Sci, Inst High Energy Phys, Beijing 100039, Peoples R China.
KeywordsCHEMICAL-VAPOR-DEPOSITION
TEMPERATURE ALN INTERLAYERS
PHASE EPITAXY
OPTICAL-PROPERTIES
SURFACTANT
SUBSTRATE
STRESS
SI
REDUCTION
SAPPHIRE
Issue Date2008
Publisherphysica status solidi a applications and materials science
CitationPHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE.2008,205,(2),294-299.
AbstractCrack-free GaN films have been achieved by inserting an Indoped low-temperature (LT) AlGaN interlayer grown on silicon by metalorganic chemical vapor deposition. The relationship between lattice constants c and a obtained by X-ray diffraction analysis shows that indium doping interlayer can reduce the stress in GaN layers. The stress in GaN decreases with increasing trimethylindium (TMIn) during interlayer growth. Moreover, for a smaller TMIn flow, the stress in GaN decreases dramatically when In acts as a surfactant to improve the crystallinity of the AlGaN interlayer, and for a larger TMIn flow, the stress will increase again. The decreased stress leads to smoother surfaces and fewer cracks for GaN layers by using an In-doped interlayer than by using an undoped interlayer. In doping has been found to enhance the lateral growth and reduce the growth rate of the c face. It can explain the strain relief and cracks reduction in GaN films. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
URIhttp://hdl.handle.net/20.500.11897/149031
ISSN1862-6300
DOI10.1002/pssa.200723162
IndexedSCI(E)
EI
Appears in Collections:物理学院
人工微结构和介观物理国家重点实验室

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