Title900 V/1.6 m Omega . cm(2) Normally Off Al2O3/GaN MOSFET on Silicon Substrate
AuthorsWang, Maojun
Wang, Ye
Zhang, Chuan
Xie, Bing
Wen, Cheng P.
Wang, Jinyan
Hao, Yilong
Wu, Wengang
Chen, Kevin J.
Shen, Bo
AffiliationPeking Univ, Inst Microelect, Beijing 100871, Peoples R China.
Peking Univ, Shenzhen Grad Sch, Sch Elect & Comp Engn, Shenzhen 100871, Peoples R China.
Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Hong Kong, Hong Kong, Peoples R China.
Peking Univ, Dept Phys, Beijing 100871, Peoples R China.
KeywordsAlGaN/GaN
breakdown voltage
high k
MOSFET
normally off
recess
silicon substrate
HEMTS
ENHANCEMENT
PERFORMANCE
TRANSISTORS
QUALITY
VOLTAGE
Issue Date2014
Publisherieee电子器件汇刊
CitationIEEE TRANSACTIONS ON ELECTRON DEVICES.2014,61,(6,SI),2035-2040.
AbstractIn this paper, we report the device performance of a high-voltage normally off Al2O3/GaN MOSFET on the Si substrate. Normally off operation is obtained by multiple cycles of O-2 plasma oxidation and wet oxide-removal gate recess process. The recessed normally off GaN MOSFET with 3 mu m gate-drain distance exhibits a maximum drain current of 585 mA/mm at 9 V gate bias. The threshold voltage of the MOSFET is 2.8 V with a standard derivation of 0.2 V on the sample with an area of 2 x 2 cm(2). The gate leakage current is below 10(-6) mA/mm during the whole gate swing up to 9 V and the I-ON/I-OFF ratio is larger than 10(9), indicating the good quality of Al2O3 gate insulator. The MOSFET with 10 mu m gate-drain distance shows a three terminal OFF-state breakdown voltage (BV) of 967 V at zero gate-source bias with a drain leakage current criterion of 1 mu A/mm. The specific ON-resistance (R-ON,R- SP) of the device is 1.6 m Omega . cm(2) and the power figure of merit (BV2/R-ON,R- SP) is 584 MW/cm(2).
URIhttp://hdl.handle.net/20.500.11897/152082
ISSN0018-9383
DOI10.1109/TED.2014.2315994
IndexedSCI(E)
EI
Appears in Collections:信息科学技术学院
物理学院
信息工程学院

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