| Title | 亚0.1μm高K栅介质MOSFETs的特性 |
| Other Titles | Characterization of Sub-100nm MOSFETs with High K Gate Dielectric |
| Authors | 朱晖文 刘晓彦 沈超 康晋锋 韩汝琦 |
| Affiliation | 北京大学微电子学研究所, |
| Keywords | 高K材料 栅介质 金属-氧化物-半导体场效应晶体管 |
| Issue Date | 2001 |
| Publisher | 半导体学报 |
| Citation | 半导体学报.2001,22,(9),1107-1111. |
| Abstract | 用二维模拟软件ISE研究了典型的70nm高K介质MOSFETs的短沟性能.结果表明,由于FIBL效应,随着栅介质介电常数的增大,阈值电区减小,而漏电流和亚阈值摆幅增大,导致器件短沟性能退化.这种退化可以通过改变侧墙材料来抑制. The short-channel performance of typical 70nm MOSFETs with high K gate dielectric is widely studied by using a two dimensional(2-D) device simulator.The short-channel performance is degraded from the fringing field and lower the source/drain junction resistance.The sidewall material is found very useful to eliminate the fringing-induced berrier lowing effect. |
| URI | http://hdl.handle.net/20.500.11897/23377 |
| ISSN | 0253-4177 |
| DOI | 10.3321/j.issn:0253-4177.2001.09.003 |
| Indexed | 中文核心期刊要目总览(PKU) 中国科学引文数据库(CSCD) |
| Appears in Collections: | 信息科学技术学院 |
