| Title | A 0.4-V low noise amplifier using forward body bias technology for 5 GHz application |
| Authors | Wu, Dake Huang, Ru Wong, Waisum Wang, Yangyuan |
| Affiliation | Peking Univ, Inst Microelect, Beijing 100871, Peoples R China. Semicond Mfg Int Corp, Shanghai 201203, Peoples R China. |
| Keywords | forward body bias low noise amplifier (LNA) low power low voltage |
| Issue Date | 2007 |
| Publisher | ieee microwave and wireless components letters |
| Citation | IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS.2007,17,(7),543-545. |
| Abstract | A fully integrated low noise amplifier (LNA) suitable for ultra low voltage and ultra low power applications is proposed and demonstrated in 0.13 mu m CMOS technology. In order to meet the requirement of ultra low voltage applications, a two-stage common-source configuration is employed. By using forward-body-biased metal oxide semiconductor field effect transistors, the proposed LNA can operate at 0.4 V supply voltage, successfully demonstrating the application potential of dynamic threshold voltage technology in the radio frequency region. The experimental results show that the proposed LNA has a 10.3 dB power gain and a 5.3 dB noise figure, while consuming only 1.03 mW dc power with an ultra low supply voltage of 0.4 V. |
| URI | http://hdl.handle.net/20.500.11897/250185 |
| ISSN | 1531-1309 |
| DOI | 10.1109/LMWC.2007.899323 |
| Indexed | SCI(E) EI |
| Appears in Collections: | 信息科学技术学院 |
