Title300 degrees C operation of normally-off AlGaN/GaN MOSFET with low leakage current and high on/off current ratio
AuthorsXu, Zhe
Wang, Jinyan
Cai, Yong
Liu, Jingqian
Yang, Zhen
Li, Xiaoping
Wang, Maojun
Yang, Zhenchuang
Xie, Bin
Yu, Min
Wu, Wengang
Ma, Xiaohua
Zhang, Jincheng
Hao, Yue
AffiliationPeking Univ, Inst Microelect, Beijing 100871, Peoples R China.
Chinese Acad Sci, Suzhou Inst Nanotech & Nanob, Key Lab Nanodevices & Applicat, Jiangsu Suzhou, Peoples R China.
Xidian Univ, Inst Microelect, Key Lab, Minist Educ Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R China.
KeywordsCIRCUITS
HEMTS
Issue Date2014
Publisherelectronics letters
CitationELECTRONICS LETTERS.2014,50,(4),315-U161.
Abstract300??C operation of a normally-off AlGaN/GaN metal-oxide semiconductor field-effect transistor (MOSFET) is successfully demonstrated, which is fabricated using a self-terminating gate recess etching technique. At 300??C, by employing a 15 nm-thick Al2O3 as the gate dielectric deposited by atomic layer deposition, the fabricated normally-off MOSFET exhibits a threshold voltage (Vth) of 3.2 V, a low off-state leakage current of ??10-7 A/mm and a low forward gate leakage current of ??10-7 A/mm. Thus, a high on/off current ratio of ?? 10 6 is obtained. Furthermore, the normally-off MOSFET also exhibits small variations in terms of its Vth from room temperature to 300??C with a maximum relative variation of 6.7% in a such temperature range. These results make this normally-off AlGaN/GaN MOSFET very promising for high-temperature digital electronics. ? The Institution of Engineering and Technology 2014.
URIhttp://hdl.handle.net/20.500.11897/291653
ISSN0013-5194
DOI10.1049/el.2013.3928
IndexedSCI(E)
EI
Appears in Collections:信息科学技术学院

Files in This Work
There are no files associated with this item.

Web of Science®



Checked on Last Week

Scopus®



Checked on Current Time

百度学术™



Checked on Current Time

Google Scholar™





License: See PKU IR operational policies.