TitleEnhanced Device Performance of AlGaN/GaN High Electron Mobility Transistors with Thermal Oxidation Treatment
AuthorsLiu, Shenghou
Wang, Jinyan
Gong, Rumin
Lin, Shuxun
Dong, Zhihua
Yu, Min
Wen, C. P.
Zeng, Chunhong
Cai, Yong
Zhang, Baoshun
Xu, Fujun
Zhang, Jincheng
Shen, Bo
AffiliationPeking Univ, Inst Microelect, Beijing 100871, Peoples R China.
Peking Univ, Nat Key Lab Sci & Technol Micro Nano Fabricat, Beijing 100871, Peoples R China.
Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215125, Peoples R China.
Xidian Univ, Inst Microelect, Key Lab Minist Educ Wide Band Gap Semicond Mat &, Xian 710071, Peoples R China.
Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China.
KeywordsFIELD-EFFECT TRANSISTORS
CURRENT COLLAPSE
SURFACE PASSIVATION
BIAS STRESS
HETEROSTRUCTURE
TRANSPORT
BREAKDOWN
STATES
HEMTS
HFET
Issue Date2011
CitationJAPANESE JOURNAL OF APPLIED PHYSICS.2011/4/1,50.
AbstractWe systematically investigated the effect of the thermal oxidation treatment on the performance of AlGaN/GaN high electron mobility transistors (HEMTs). The HEMTs with thermal oxidation treatment exhibit four orders of magnitude reduction in gate leakage current, 80% reduction of trap density, and more than two times improvement of off-state drain breakdown voltage, compared with those shown by HEMTs without thermal oxidation treatment. The simplicity in the thermal oxidation treatment process, coupled with the drastic improvement in device performance render the thermal oxidation treatment highly promising for GaN-based microwave power amplifier applications in communication and radar systems. (C) 2011 The Japan Society of Applied Physics
URIhttp://hdl.handle.net/20.500.11897/291918
ISSN0021-4922
DOI10.1143/JJAP.50.04DF10
IndexedSCI(E)
EI
CPCI-S(ISTP)
Appears in Collections:信息科学技术学院
物理学院
人工微结构和介观物理国家重点实验室

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