TitleAnalysis on the new mechanisms of low resistance stacked Ti/Al Ohmic contact structure on AlGaN/GaN HEMTs
AuthorsGong, Rumin
Wang, Jinyan
Dong, Zhihua
Liu, Shenghou
Yu, Min
Wen, Cheng P.
Hao, Yilong
Shen, Bo
Cai, Yong
Zhang, Baoshun
Zhang, Jincheng
AffiliationPeking Univ, Inst Microelect, Beijing 100871, Peoples R China.
Peking Univ, Natl Key Lab Sci & Technol Micro Nano Fabricat, Beijing 100871, Peoples R China.
Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China.
CAS, Suzhou Inst Nanotech & Nanobion, Suzhou 215125, Peoples R China.
Xidian Univ, Inst Microelect, Key Lab Minist Educ Wide Band Gap Semicond Mat &, Xian 710071, Peoples R China.
KeywordsMICROSTRUCTURE
GAN
Issue Date2010
Publisherjournal of physics d applied physics
CitationJOURNAL OF PHYSICS D-APPLIED PHYSICS.2010,43,(39).
AbstractA novel stacked Ti/Al based Ti/Al/Ti/Al/Ti/Al/Ti/Al/Ni/Au Ohmic contact structure is optimized. Compared with the conventional alloyed Ti/Al/Ni/Au Ohmic contact structure, the novel Ohmic contact structure can obtain much lower contact resistance and specific contact resistivity. Through analysis of x-ray diffraction spectra, cross-section transmission electron microscopy images and corresponding electron dispersive x-ray spectroscopy spectra in the novel stacked Ti/Al based Ohmic structure, the reactions between metals and the AlGaN layer were proven to be stable, uniform and continuous, which produced smooth contact interface. In addition, the top Au layer was prevented from diffusing downwards to the metal/AlGaN interface, which degraded the Ohmic performance.
URIhttp://hdl.handle.net/20.500.11897/291944
ISSN0022-3727
DOI10.1088/0022-3727/43/39/395102
IndexedSCI(E)
EI
Appears in Collections:信息科学技术学院
物理学院
人工微结构和介观物理国家重点实验室

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