TitleEffects of Shell Strain on Valence Band Structure and Transport Properties of Ge/Si1-xGex Core-Shell Nanowire
AuthorsXu, Honghua
Liu, Xiaoyan
Du, Gang
Zhao, Yuning
He, Yuhui
Fan, Chun
Han, Ruqi
Kang, Jinfeng
AffiliationPeking Univ, Inst Microelect, Beijing 100871, Peoples R China.
Minist Educ, Key Lab Microelect Devices & Circuits, Beijing 100871, Peoples R China.
Chinese Acad Sci, Inst Microelect, Key Lab Nanofabricat & Novel Devices Integrat Tec, Beijing 100029, Peoples R China.
Peking Univ, Ctr Comp, Beijing 100871, Peoples R China.
KeywordsFIELD-EFFECT TRANSISTORS
GROWTH
GERMANIUM
SILICON
VAPOR
Issue Date2010
CitationJAPANESE JOURNAL OF APPLIED PHYSICS.49.
AbstractVarious Si1-xGex shell strains induced by changing the thickness or tuning the Ge and Si contents as well as by modulating the valence band structure and hole transport characteristics of core/shell nanowire field effect transistors (FETs) have been calculated. As Si1-xGex shell thickness increases, the strained valence subbands shift upwards and warp markedly. Most of the corresponding hole effective masses of the top five subbands decrease. Meanwhile, the hole mobility of the Ge(110) nanowire increases with increasing shell thickness. As the Ge concentration in the Si1-xGex shell decreases, the strained valence subbands and hole mobility show similar shifts. As a result, our calculation indicates the possibility of improving the nanowire performance of heterostructure nanowire FETs. (C) 2010 The Japan Society of Applied Physics
URIhttp://hdl.handle.net/20.500.11897/291983
ISSN0021-4922
DOI10.1143/JJAP.49.04DN01
IndexedSCI(E)
EI
CPCI-S(ISTP)
Appears in Collections:信息科学技术学院
计算中心

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