| Title | SOI wafer achieved by smart-cut process |
| Authors | Li, Yingxue Zhang, Zhikuan Ni, Weihua Zhang, Xing Wang, Yangyuan |
| Affiliation | Peking Univ, Inst Microelect, Beijing 100871, Peoples R China. |
| Keywords | INSULATOR MATERIAL TECHNOLOGY SILICON |
| Issue Date | 1998 |
| Citation | 1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS.1998,761-764. |
| Abstract | Smart-Cut progress is an alternative route to those former silicon on insulator(SOI)material technologies such as SIMOX (separation by implanted oxygen) and BESOI(bonded and etch back SOI). It is based on proton implantation and wafer bonding associated with a temperature treatment which induces a in-depth splitting of the implanted wafer. In this paper, basic mechanisms of bonding and the splitting are discussed. Finally the characteristics elf the final structure are presented. |
| URI | http://hdl.handle.net/20.500.11897/294013 |
| DOI | 10.1109/ICSICT.1998.786123 |
| Indexed | CPCI-S(ISTP) |
| Appears in Collections: | 信息科学技术学院 |
