| Title | A study of source/drain-on-insulator structure for extremely scaled MOSFETs |
| Authors | Zhang, Zhikuan Zhang, Shengdong Feng, Chuguang Chan, Mansun |
| Affiliation | Dept. of Elec. and Electron. Eng., HKUST, Hong Kong, Hong Kong Institute of Microelectronics, Peking University, China |
| Issue Date | 2004 |
| Citation | Device Research Conference - Conference Digest, 62nd DRC.Notre Dame, IN, United states. |
| Abstract | The MOSFET structure with source/drain on insulator (SDOI) was studied, and its advantage was verified using detail device simulation. Device structure parameters optimizations were discussed to maximize the intrinsic performance of extremely scaled metal oxide semiconductor field effect transistors (MOSFET) . The effect of elevated source/drain thickness on series resistance was simulated. A design guideline was provided to minimize the series resistance and parasitic capacitance. The results show that significant increase in device performance can be achieved by careful optimization of the SDOI structure. |
| URI | http://hdl.handle.net/20.500.11897/329220 |
| DOI | 10.1109/DRC.2004.1367810 |
| Indexed | EI |
| Appears in Collections: | 信息科学技术学院 |
