TitleAnisotropic Fermi Surface and Quantum Limit Transport in High Mobility Three-Dimensional Dirac Semimetal Cd3As2
AuthorsZhao, Yanfei
Liu, Haiwen
Zhang, Chenglong
Wang, Huichao
Wang, Junfeng
Lin, Ziquan
Xing, Ying
Lu, Hong
Liu, Jun
Wang, Yong
Brombosz, Scott M.
Xiao, Zhili
Jia, Shuang
Xie, X. C.
Wang, Jian
AffiliationPeking Univ, Sch Phys, Int Ctr Quantum Mat, Beijing 100871, Peoples R China.
Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China.
Huazhong Univ Sci & Technol, Wuhan Natl High Magnet Field Ctr, Wuhan 430074, Peoples R China.
Zhejiang Univ, Dept Mat Sci & Engn, Ctr Electron Microscopy, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China.
Argonne Natl Lab, Div Mat Sci, Argonne, IL 60439 USA.
No Illinois Univ, Dept Phys, De Kalb, IL 60115 USA.
KeywordsTOPOLOGICAL INSULATORS
OSCILLATIONS
GRAPHENE
BI2TE3
PHASE
Issue Date2015
PublisherPHYSICAL REVIEW X
CitationPHYSICAL REVIEW X.2015,5,(3).
AbstractThree-dimensional topological Dirac semimetals have a linear dispersion in 3D momentum space and are viewed as the 3D analogues of graphene. Here, we report angle-dependent magnetotransport on the newly revealed Cd3As2 single crystals and clearly show how the Fermi surface evolves with crystallographic orientations. Remarkably, when the magnetic field lies in the [112] or [44 (1) over bar] axis, magnetoresistance oscillations with only single period are present. However, the oscillation shows double periods when the field is applied along the [1 (1) over bar0] direction. Moreover, aligning the magnetic field at certain directions also gives rise to double period oscillations. We attribute the observed anomalous oscillation behavior to the sophisticated geometry of Fermi surface and illustrate a complete 3D Fermi surface with two nested anisotropic ellipsoids around the Dirac points. Additionally, a submillimeter mean-free path at 6 K is found in Cd3As2 crystals, indicating ballistic transport in this material. By measuring the magnetoresistance up to 60 T, we reach the quantum limit (n = 1 Landau level) at about 43 T. These results improve the knowledge of the Dirac semimetal material Cd3As2 and also pave the way for proposing new electronic applications based on 3D Dirac materials.
URIhttp://hdl.handle.net/20.500.11897/416249
ISSN2160-3308
DOI10.1103/PhysRevX.5.031037
IndexedSCI(E)
EI
Appears in Collections:物理学院

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