| Title | N+/P shallow junction with high dopant activation and low contact resistivity fabricated by solid phase epitaxy method for Ge technology |
| Authors | Liu, Pengqiang Li, Ming An, Xia Lin, Meng Zhao, Yang Zhang, Bingxin Xia, Xuyuan Huang, Ru |
| Affiliation | Institute of Microelectronics, Peking University, Beijing, China |
| Issue Date | 2015 |
| Publisher | Silicon Nanoelectronics Workshop, SNW 2015 |
| Citation | Silicon Nanoelectronics Workshop, SNW 2015.Kyoto, Japan,2015/9/24. |
| Abstract | In this paper, solid phase epitaxy (SPE) process is proposed to improve phosphorous activation and hence reduce the contact resistivity of n+/p junction for Ge n-MOS technology. Over 1×1020cm-3electrical concentration and about 1.75×10-6ohm·cm2contact resistivity have been achieved at P+implantation of 10keV and 5×1014cm-2and annealing condition of 600oC, 10seconds. The fabricated N+/P diode shows 2 times higher forward current and well controlled leakage. ? 2015 JSAP. |
| URI | http://hdl.handle.net/20.500.11897/436629 |
| ISSN | 9784863485389 |
| Indexed | EI |
| Appears in Collections: | 信息科学技术学院 |
