TitleBuffer-Induced Time-Dependent OFF-State Leakage in AlGaN/GaN High Electron Mobility Transistors on Silicon
AuthorsTao, Ming
Wang, Maojun
Liu, Shaofei
Xie, Bing
Yu, Min
Wen, Cheng P.
Wang, Jinyan
Hao, Yilong
Wu, Wengang
Shen, Bo
AffiliationPeking Univ, Inst Microelect, Beijing 100871, Peoples R China.
Peking Univ, Dept Phys, Beijing 100871, Peoples R China.
KeywordsAlGaN/GaN
buffer
drain injection
high electron mobility transistor (HEMT)
OFF-state leakage
silicon substrate
threshold voltage
time-dependent
trap
POWER HEMTS
MIS-HEMTS
BREAKDOWN
VOLTAGE
INSTABILITY
Issue Date2016
PublisherIEEE TRANSACTIONS ON ELECTRON DEVICES
CitationIEEE TRANSACTIONS ON ELECTRON DEVICES.2016,63(12),4860-4864.
AbstractTime-dependent OFF-state leakage behavior of AlGaN/GaN MISHEMTs on silicon substrate is investigated and a novel degradation mechanism is proposed in this paper. Under constant high voltage OFF-state stress, drain leakage current gradually increases with stress time and the behavior is gate bias and temperature-dependent. Consecutive OFF-state breakdown measurement with drain injection technique indicates that the negative shift of threshold voltage (V-th) is responsible for the increase of drain leakage current during stress measurement. It is proposed that the negative shift of V-th is mainly induced by the ionization of uncompensated donor like deep levels near the channel, which are most likely to be located in the 300-nm-thick unintentionally doped GaN layer above the carbon doped buffer layer.
URIhttp://hdl.handle.net/20.500.11897/458269
ISSN0018-9383
DOI10.1109/TED.2016.2614332
IndexedSCI(E)
Appears in Collections:信息科学技术学院
物理学院

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