|Title||High carrier concentration ZnO nanowire arrays for binder-free conductive support of supercapacitors electrodes by Al doping|
|Affiliation||Univ Sci & Technol Beijing, Sch Mat Sci & Engn, State Key Lab Adv Met & Mat, Beijing 100083, Peoples R China.|
Univ Sci & Technol Beijing, Key Lab New Energy & Nanotechnol, Beijing 100083, Peoples R China.
Peking Univ, Coll Engn, Beijing 100084, Peoples R China.
ZnO nanowire arrays
|Publisher||JOURNAL OF COLLOID AND INTERFACE SCIENCE|
|Citation||JOURNAL OF COLLOID AND INTERFACE SCIENCE.2016,484,155-161.|
|Abstract||Doping semiconductor nanowires (NWs) for altering their electrical and optical properties is a critical strategy for tailoring the performance of nanodevices. Here, we prepared in situ Al-doped ZnO nanowire arrays by using continuous flow injection (CFI) hydrothermal method to promote the conductivity. This reasonable method offers highly stable precursor concentration for doping that effectively avoid the appearance of the low conductivity ZnO nanosheets. Benefit from this, three orders of magnitude rise of the carrier concentration from 10(16) cm(-3) to 10(19) cm(-3) can be achieved compared with the common hydrothermal (CH) mothed in Mott-Schottky measurement. Possible effect of Al-doping was discussed by first-principle theory. On this basis, Al-doped ZnO nanowire arrays was developed as a binder-free conductive support for supercapacitor electrodes and high capacitance was triggered. It is owing to the dramatically decreased transfer resistance induced by the growing free-moving electrons and holes. Our results have a profound significance not merely in the controlled synthesis of other doping nanomaterials by co-precipitation method but also in the application of binder-free energy materials or other materials. (C) 2016 Elsevier Inc. All rights reserved.|
|Appears in Collections:||工学院|