TitleSpin transport in two-layer-CVD-hBN/graphene/hBN heterostructures
AuthorsGurram, M.
Omar, S.
Zihlmann, S.
Makk, P.
Li, Q. C.
Zhang, Y. F.
Schonenberger, C.
van Wees, B. J.
AffiliationUniv Groningen, Zernike Inst Adv Mat, Phys Nanodevices, Nijenborgh 4, NL-9747 AG Groningen, Netherlands.
Univ Basel, Dept Phys, Klingelbergstr 82, CH-4056 Basel, Switzerland.
Peking Univ, Coll Engn, Dept Mat Sci & Engn, Ctr Nanochem CNC, Beijing 100871, Peoples R China.
KeywordsHEXAGONAL BORON-NITRIDE
GRAPHENE
BILAYER
FILMS
Issue Date2018
PublisherPHYSICAL REVIEW B
CitationPHYSICAL REVIEW B. 2018, 97(4).
AbstractWe study room-temperature spin transport in graphene devices encapsulated between a layer-by-layer-stacked two-layer-thick chemical vapor deposition (CVD) grown hexagonal boron nitride (hBN) tunnel barrier, and a few-layer-thick exfoliated-hBN substrate. We find mobilities and spin-relaxation times comparable to that of SiO2 substrate-based graphene devices, and we obtain a similar order of magnitude of spin relaxation rates for both the Elliott-Yafet and D'Yakonov-Perel' mechanisms. The behavior of ferromagnet/two-layer-CVDhBN/ graphene/hBN contacts ranges from transparent to tunneling due to inhomogeneities in the CVD-hBN barriers. Surprisingly, we find both positive and negative spin polarizations for high-resistance two-layer-CVD-hBN barrier contacts with respect to the low-resistance contacts. Furthermore, we find that the differential spininjection polarization of the high-resistance contacts can be modulated by dc bias from -0.3 to + 0.3 V with no change in its sign, while its magnitude increases at higher negative bias. These features point to the distinctive spin-injection nature of the two-layer-CVD-hBN compared to the bilayer-exfoliated-hBN tunnel barriers.
URIhttp://hdl.handle.net/20.500.11897/500011
ISSN2469-9950
DOI10.1103/PhysRevB.97.045411
IndexedSCI(E)
Appears in Collections:工学院

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