| Title | Structure and luminescence of α-plane GaN on γ-plane sapphire substrate modified by Si implantation |
| Authors | 黄黎杰 李琳 尚震 王茂 康俊杰 罗巍 梁智文 Slawomir Prucnal Ulrich Kentsch 吉彦达 张法碧 王琦 袁冶 孙钱 周生强 王新强 |
| Affiliation | Songshan Lake Materials Laboratory Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research College of Mathematics and Physics, Beijing University of Chemical Technology Dongguan Institute of Optoelectronics, Peking University Department of Applied Physics, College of Science, Nanjing University of Aeronautics and Astronautics Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO),Chinese Academy of Sciences (CAS) |
| Keywords | ion implantation GaN defects |
| Issue Date | 15-May-2021 |
| Publisher | Chinese Physics B |
| Abstract | We show the structural and optical properties of non-polar a-plane Ga N epitaxial films modified by Si ion implantation.Upon gradually raising Si fluences from 5×10~(13)cm~(-2)to 5×10~(15)cm~(-2),the n-type dopant concentration gradually increases from 4.6×10~(18)cm~(-2)to 4.5×10~(20)cm~(-2),while the generated vacancy density accordingly raises from3.7×10~(13)cm~(-2)to 3.8×10~(15)cm~(-2).Moreover,despite that the implantation enhances structural disorder,the epitaxial structure of the implanted region is still well preserved which is confirmed by Rutherford backscattering channeling spectrometry measurements.The monotonical uniaxial lattice expansion along the a direction (out-of-plane direction) is observed as a function of fluences till 1×10~(15)cm~(-2),which ceases at the overdose of 5×10~(15)cm~(-2)due to the partial amorphization in the surface region.Upon raising irradiation dose,a yellow emission in the as-grown sample is gradually quenched,probably due to the irradiation-induced generation of non-radiative recombination centers. |
| URI | http://hdl.handle.net/20.500.11897/620005 |
| ISSN | 1674-1056 |
| Indexed | 中国科学引文数据库(CSCD) |
| Appears in Collections: | 待认领 |
