TitleEffect of a Lateral Overgrowth Process on the Strain Evolution of AlN Films Grown on a Nanopatterned Sapphire Substrate for Ultraviolet-C Light-Emitting Diode Applications
AuthorsLiu, Shangfeng
Hoo, Jason
Chen, Zhaoying
Yan, Long
Wang, Tao
Sheng, Shanshan
Sun, Xiaoxiao
Yuan, Ye
Guo, Shiping
Wang, Xinqiang
AffiliationPeking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Nanooptoelect Frontier Ctr,Minist Educ NFC MOE, Beijing 100871, Peoples R China
Peking Univ, Sch Phys, Electron Microscopy Lab, Beijing 100871, Peoples R China
Adv Microfabricat Equipment Inc, MOCVD Dept, Shanghai 201201, Peoples R China
Songshan Lake Mat Lab, Dongguan 523808, Guangdong, Peoples R China
Peking Univ, Dongguan Inst Optoelect, Dongguan 523808, Guangdong, Peoples R China
KeywordsCOALESCENCE
QUALITY
Issue DateSep-2021
PublisherPHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
AbstractStrain evolution of AlN grown on hole-type (HT) and pillar-type (PT) nanopatterned sapphire substrates (NPSSs) during the epitaxial lateral overgrowth process is comparably studied. It is found that, after complete coalescence, the residual strain of AlN on HT-NPSS is tensile, whereas AlN on PT-NPSS is almost strain free. The different strain states are associated with different behaviors of crystal merging during the lateral overgrowth process, depending on the type of pattern. Then, ultraviolet-C (UVC) light-emitting diode (LED) wafers are grown on two types of AlN templates with the distinctive strain states. It is confirmed that AlN on HT-NPSS with tensile strain offers the advantage of producing a high-quality AlGaN layer with a fairly flat surface, which is the key point for fabricating high-performance UVC LEDs.
URIhttp://hdl.handle.net/20.500.11897/624644
ISSN1862-6254
DOI10.1002/pssr.202100363
IndexedEI
SCI(E)
Appears in Collections:物理学院
人工微结构和介观物理国家重点实验室

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