TitleGaN HEMTs on low resistivity Si substrates with thick buffer layers for RF signal amplification and power conversion
AuthorsSong, Wenjie
Zhang, Jie
Zheng, Zheyang
Feng, Sirui
Yang, Xuelin
Shen, Bo
Chen, Kevin J.
AffiliationHong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Kowloon, Clear Water Bay, Hong Kong, Peoples R China
Peking Univ, Sch Phys, Beijing, Peoples R China
KeywordsELECTRON-MOBILITY TRANSISTORS
ALGAN/GAN HEMTS
SILICON SUBSTRATE
CHANNEL
CHIPSET
DEVICES
Issue Date1-Apr-2022
PublisherAIP ADVANCES
AbstractWe report GaN high-electron-mobility transistors (HEMTs) with a thick (7.7 mu m) GaN buffer on a Czochralski low resistivity Si (LRS) substrate. The GaN HEMTs exhibit high performance for both radio-frequency (RF) amplification and power conversion. The thick GaN buffer was grown by means of vacancy engineering, delivering a low dislocation density of similar to 1.6 x 10(8) cm(-2), contributing to suppressed RF signal coupling to the lossy Si substrate and a high vertical voltage blocking capability. For RF performance, GaN HEMTs with a 650 nm gate exhibit an f(T)/f(MAX) value of 25.1/32.3 GHz and a maximum output power P-OUT of 2.2 W/mm at 4 GHz with a drain voltage V-DS of 20 V, which is comparable with the performance of RF GaN HEMTs on a high-resistivity silicon substrate without the existence of the field plate. For power performance, the vertical breakdown voltage of the wafer is 1160 V, and the three-terminal lateral breakdown voltage is 885 V in a GaN HEMT with a gate-to-drain distance of 8 mu m. The thick GaN layer on the LRS substrate scheme thus provides a compelling platform for monolithic integration of high-performance RF devices and high-voltage power devices.
URIhttp://hdl.handle.net/20.500.11897/643274
DOI10.1063/5.0086957
IndexedEI
SCI(E)
Appears in Collections:物理学院

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