TitleAtomic-Scale Investigation of the Lattice-Asymmetry-Driven Anisotropic Sublimation in GaN
AuthorsSheng, Shanshan
Wang, Tao
Liu, Shangfeng
Liu, Fang
Sheng, Bowen
Yuan, Ye
Li, Duo
Chen, Zhaoying
Tao, Renchun
Chen, Ling
Zhang, Baoqing
Yang, Jiajia
Wang, Ping
Wang, Ding
Sun, Xiaoxiao
Zhang, Jingmin
Xu, Jun
Ge, Weikun
Shen, Bo
Wang, Xinqiang
AffiliationPeking Univ, Ctr Nano Optoelect, State Key Lab Mesoscop Phys & Frontiers Sci, Beijing 100871, Peoples R China
Peking Univ, Sch Phys, Elect Microscopy Lab, Beijing 100871, Peoples R China
Peking Univ, Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China
Peking Univ, Yangtze Delta Inst Optoelect, Nantong 226010, Jiangsu, Peoples R China
KeywordsNANOWIRES
Issue DateJun-2022
PublisherADVANCED SCIENCE
AbstractThermal sublimation, a specific method to fabricate semiconductor nanowires, is an effective way to understand growth behavior as well. Utilizing a high-resolution transmission electron microscope (TEM) with in situ heating capability, the lattice-asymmetry-driven anisotropic sublimation behavior is demonstrated of wurtzite GaN: sublimation preferentially occurs along the [0001 over bar $000\bar{1}$] and [0001] directions in both GaN thin films and nanowires. Hexagonal pyramidal nanostructures consisting of six semipolar {11 over bar 01}$\{ {1\bar{1}01} \}$ planes and one (0001 over bar $\bar{1}$) plane with the apex pointing to the [0001] direction are generated as a sublimation-induced equilibrium crystal structure, which is consistent with the lattice-asymmetry-driven growth behaviors in wurtzite GaN. These findings offer a new insight into the thermal stability of wurtzite GaN and provide essential background for tailoring the structure of III-nitrides for atomic-scale manufacturing.
URIhttp://hdl.handle.net/20.500.11897/647298
DOI10.1002/advs.202106028
IndexedEI
SCI(E)
Appears in Collections:其他实验室
人工微结构和介观物理国家重点实验室

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