TitleExponential dependence of photocurrent on reciprocal of channel length in amorphous inzno thin-film transistors with short channel
AuthorsChen,Jie
Zhou,Xiaoliang
Tang,Fanyou
Huang,Tengyan
Liu,Hao
Lu,Lei
Zhang,Shengdong
AffiliationSchool of Electronic and Computer Engineering, Peking University, Shenzhen, China
Institute of Microelectronics, Peking University, Beijing, China
Active Matrix Display Beijing Engineering Research Center, Beijing, China
KeywordsZinc compounds
Image enhancement - Indium compounds - Photocurrents - Thin film circuits - Thin film transistors - Thin films
Issue Date2022
PublisherDigest of Technical Papers - SID International Symposium
Abstract<div data-language="eng" data-ev-field="abstract">With downscaling the channel length (L) of amorphous InZnO (a-IZO) thin-film transistors (TFTs), the photocurrent (Iph) of long-channel TFTs evolved linearly with 1/L, while an exponential dependence of Iph on 1/L was found for TFTs with relatively shorter channels, resulting in a significantly enhanced photo-responsivity with short-channel a-IZO phototransistors. This is attributed to a source barrier lowering effect happening in the short-channel photo-TFTs under illumination. Such an accelerated Iph rising with L downscaling could be used to implement high responsivity of photoelectric detectors and image sensors.<br/></div> &copy; 2022. John Wiley and Sons Inc. AIAA. All rights reserved.
URIhttp://hdl.handle.net/20.500.11897/665943
ISSN0097-966X
DOI10.1002/sdtp.15687
IndexedEI
Appears in Collections:信息工程学院
信息科学技术学院

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